RYE002N05TCL

0.9V Drive Nch MOSFET RYE002N05 z Structure Silicon N-channel MOSFET z Dimensions (Unit : mm) EMT3 or (SC-75A) e N co ew m m D es en ig de ns d f zFeatures 1) High speed switing. 2) Small package(EMT3). 3) Ultra low voltage drive(0.9V drive). Abbreviated symbol : QJ z Application Switching z Packaging specifications Package Type Code Basic ordering unit (pieces) RYE002N05 z Inner circuit (3) Taping TCL 3000 { z Absolute maximum ratings (Ta = 25°C) Symbol Parameter Drain-source voltage VDSS Gate-source voltage Drain current VGSS ID IDP IS Pulsed R Source current (Body Diode) Continuous Pulsed Continuous ISP PD Power dissipation *1 *2 Unit 50 ±8 ±200 V V mA ±800 125 800 mA mA mA 150 mW Tch Tstg 150 −55 to +150 °C °C Symbol Limits Unit 833 °C / W (1) Source (2) Gate (3) Drain (1) (2) (2) (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ot Channel temperature Range of storage temperature *1 Limits *1 Pw≤10µs, Duty cycle≤1% N *2 Each terminal mounted on a recommended land. z Thermal resistance Parameter Channel to Ambient Rth (ch-a)* * Each terminal mounted on a recommended land. www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.05 - Rev.B 　 RYE002N05 Data Sheet z Electrical characteristics (Ta = 25°C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V (BR)DSS Min. Typ. Max. Unit Conditions - - ±10 µA VGS=±8V, VDS=0V 50 - - V ID=1mA, VGS=0V IDSS - - 1 µA VDS=50V, VGS=0V VGS (th) 0.3 - 0.8 V VDS=10V, ID=1mA - 1.6 2.2 - 1.7 2.4 - 2.0 2.8 - 2.2 3.3 ID=100mA, VGS=1.2V - 3.0 9.0 ID=10mA, VGS=0.9V l Yfs l* 0.2 - - Input capacitance Ciss - 26 - pF VDS=10V Output capacitance Coss - 6 - pF VGS=0V Reverse transfer capacitance Crss - 3 - pF f=1MHz Turn-on delay time td(on) * - 5 - ns ID=100mA, VDD 25V tr * - 8 - ns VGS=4.5V td(off) * tf * - 17 43 - ns ns RL=250Ω RG=10Ω Gate threshold voltage Static drain-source on-state resistance Rise time Turn-off delay time Fall time *Pulsed ID=200mA, VGS=2.5V Ω S ID=200mA, VGS=1.5V ID=200mA, VDS=10V e N co ew m m D es en ig de ns d f Forward transfer admittance * RDS (on) ID=200mA, VGS=4.5V or Zero gate voltage drain current zBody diode characteristics (Source-Drain) (Ta = 25°C) Parameter Forward Voltage Min. Typ. Max. - - 1.2 Unit V Conditions Is=200mA, VGS=0V N ot R *Pulsed Symbol VSD * www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.05 - Rev.B Data Sheet RYE002N05 z Electrical characteristic curves (Ta = 25°C) 0.2 1 VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V Ta=25°C Pulsed VGS= 0.8V VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V 0.1 VGS= 0.8V e N co ew m m D es en ig de ns d f 0.4 0.6 0.8 1 0 2 6 8 0 10 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V] Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3 Typical Transfer Characteristics 1000 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 100 0.01 0.1 1 10000 VGS= 4.5V Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 DRAIN-CURRENT : ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 0.1 VGS= 2.5V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 1000 100 1 0.001 10000 VGS= 1.2V Pulsed 1000 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 3/5 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] ot VGS= 1.5V Pulsed 1000 0.01 10000 DRAIN-CURRENT : ID[A] R 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 4 DRAIN-SOURCE VOLTAGE : VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 0.2 0.001 N 0.01 0.001 0 0 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 0.1 VGS= 0.7V VGS= 0.7V 0 Ta=25°C Pulsed VDS= 10V Pulsed or 0.1 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 4.5V DRAIN CURRENT : ID[A] 0.2 10000 VGS= 0.9V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 1000 100 0.001 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 2011.05 - Rev.B Data Sheet Ta= −25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= − 25°C 0.01 0.1 0.01 1 5000 Ta=25°C Pulsed 4000 ID= 0.01A 3000 ID= 0.20A 2000 1000 0 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Forward Transfer Admittance vs. Drain Current Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage td(on) 1 0.5 0 2 4 6 tf Ta=25°C VDD=25V VGS=4.5V RG=10Ω Pulsed tr 0.1 1 DRAIN-CURRENT : ID[A] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ta=25°C f=1MHz VGS=0V 4 3 2 Ta=25°C VDD=25V ID= 0.2A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 100 Ciss 10 Crss Coss 1 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage Fig.15 Typical Capacitance vs. Drain-Source Voltage N ot R Fig.13 Switching Characteristics 8 GATE-SOURCE VOLTAGE : VGS[V] CAPACITANCE : C [pF] 10 0 DRAIN-CURRENT : ID[A] td(off) 100 1 GATE-SOURCE VOLTAGE : VGS [V] 0.01 1000 SWITCHING TIME : t [ns] SOURCE CURRENT : Is [A] 1 VGS=0V Pulsed or 1 VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 e N co ew m m D es en ig de ns d f FORWARD TRANSFER ADMITTANCE : |Yfs| [S] RYE002N05 www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.05 - Rev.B 　 RYE002N05 Data Sheet z Measurement circuits Pulse width ID VDS RL 90% 50% 10% VGS VDS 10% D.U.T. VDD RG 50% 90% 90% td(on) tr ton td(off) tf toff Fig.1-2 Switching waveforms e N co ew m m D es en ig de ns d f Fig.1-1 Switching time measurement circuit 10% or VGS N ot R z Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. or The content specified herein is subject to change for improvement without notice. e N co ew m m D es en ig de ns d f The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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