RYU002N05

Data Sheet 0.9V Drive Nch MOSFET RYU002N05  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) Features 1) High speed switing. 2) Small package(UMT3). 3)Ultra low voltage drive(0.9V drive). (2) (1) Abbreviated symbol : QJ  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RYU002N05 Taping T306 3000   Inner circuit (3)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. (2) (1) Symbol VDSS VGSS Limits 50 8 200 Unit V V mA mA mA mA mW C C (1) SOURCE (2) GATE (3) DRAIN Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 800 150 800 200 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a)* Limits 625 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.04 - Rev.A RYU002N05  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 50 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time *Pulsed 　 Typ. 1.6 1.7 2.0 2.2 3.0 26 6 3 5 8 17 43 Max. 10 1 0.8 2.2 2.4 2.8 3.3 9.0 S pF pF pF ns ns ns ns  Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=50V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=4.5V ID=200mA, VGS=2.5V ID=200mA, VGS=1.5V ID=100mA, VGS=1.2V ID=10mA, VGS=0.9V ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 25V VGS=4.5V RL=250 RG=10 Data Sheet Drain-source breakdown voltage V (BR)DSS l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * 0.2 - Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.04 - Rev.A RYU002N05  Electrical characteristics curves 　 Data Sheet 0.2 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] 0.2 DRAIN CURRENT : ID[A] VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V VGS= 0.9V VGS= 0.8V 0.05 Ta=25C Pulsed VGS= 0.7V 0 1 0 2 4 6 8 10 1 VDS= 10V Pulsed 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 0.15 0.1 VGS= 0.9V VGS= 0.8V VGS= 4.5V VGS= 2.5V VGS= 1.5V VGS= 1.2V Ta=25C Pulsed VGS= 0.7V 0.15 0.1 0.01 0.05 0 0 0.2 0.4 0.6 0.001 0 0.2 0.4 0.6 0.8 1 0.8 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] Ta= 25C Pulsed VGS= 4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] 10000 10000 10000 VGS= 2.5V Pulsed 1000 VGS= 0.9V VGS= 1.2V VGS= 1.5V VGS= 2.5V VGS= 4.5V 0.01 0.1 1 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 0.01 0.1 1 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m ] 10000 VGS= 1.5V Pulsed 10000 10000 VGS= 1.2V Pulsed VGS= 0.9V Pulsed 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 0.01 0.1 1 1000 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) DRAIN-CURRENT : ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) DRAIN-CURRENT : ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.04 - Rev.A RYU002N05 　 Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] SOURCE CURRENT : Is [A] VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] 10 1 VGS=0V Pulsed 5000 4000 3000 2000 1000 0 0 1 2 3 4 5 6 7 8 ID= 0.01A ID= 0.20A Ta=25C Pulsed 1 Ta=25C Ta=25C Ta=75C Ta=125C 0.1 DRAIN-CURRENT : ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= 25C 0 0.5 1 1.5 0.1 0.01 0.01 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage GATE-SOURCE VOLTAGE : VGS [V] 1000 SWITCHING TIME : t [ns] td(off) 100 tf CAPACITANCE : C [pF] Ta=25C VDD=25V VGS=4.5V RG=10 1000 4 Ta=25C f=1MHz VGS=0V Ciss 3 100 2 10 1 td(on) 1 0.01 tr 0.1 DRAIN-CURRENT : ID[A] 1 0 0 0.5 Ta=25C VDD=25V ID= 0.2A RG=10 Pulsed 1 1.5 10 Crss Coss 1 0.01 0.1 1 10 100 TOTAL GATE CHARGE : Qg [nC] Fig.14 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage Fig.13 Switching Characteristics www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.04 - Rev.A RYU002N05  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A