RZB002P02

1.2V Drive Pch MOSFET RZB002P02  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) VMN3 0.22 (3) Features 1) High speed switing. 2) Ultra small package(VMN3). 3) Ultra low voltage drive(1.2V drive). 0.1 1.0 0.8 0.1 0.16 (1) (2) 0.17 0.35 0.6 0.37  Application Switching Abbreviated symbol : YK  Packaging specifications Package Type Code Basic ordering unit (pieces) RZB002P02 Taping T2L 8000   Inner circuit (3)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a recommended land. Symbol VDSS VGSS Limits 20 10 200 Unit V V mA mA mA mA mW C C (1) (2) (1) GATE (2) SOURCE (3) DRAIN Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 800 100 800 150 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a recommended land. Symbol Rth (ch-a) * Limits 833 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.11 - Rev.A RZB002P02  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Symbol IGSS IDSS VGS (th) Min. 20 0.3 Static drain-source on-state resistance * RDS (on) Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Typ. 0.8 1.0 1.3 1.6 2.4 115 10 6 6 4 17 17 1.4 0.3 0.3 Max. 10 1 1.0 1.2 1.5 2.2 3.5 9.6 S pF pF pF ns ns ns ns nC nC nC  Unit A V A V Conditions VGS=10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=100A ID=200mA, VGS=4.5V ID=100mA, VGS=2.5V ID=100mA, VGS=1.8V ID=40mA, VGS=1.5V ID=10mA, VGS=1.2V ID=200mA, VDS=10V VDS=10V VGS=0V f=1MHz ID=100mA, VDD 10V VGS=4.5V RL=100 RG=10 ID=200mA, VDD VGS=4.5V 10V Data Sheet Drain-source breakdown voltage V (BR)DSS l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 0.2 - Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=200mA, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.11 - Rev.A RZB002P02 　 0.2 1 Data Sheet 0.2 DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 0.15 0.15 0.1 VGS= -1.5V 0.05 VGS= -2.5V VGS= -2.0V VGS= -1.8V VGS= -2.5V VGS= -1.8V VGS= -1.5V DRAIN CURRENT : -ID[A] VGS= -10.0V VGS= -4.5V VGS= -3.2V Ta=25°C Pulsed VGS= -4.5V Ta=25°C Pulsed 0.1 VDS= -10V Pulsed 0.1 VGS= -1.2V 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C VGS= -1.2V 0.05 0.001 VGS= -1.0V 0 VGS= -1.0V 0 0 0.2 0.4 0.6 0.8 1 0.0001 0 2 4 6 8 10 0 0.5 1 1.5 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics( Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] Ta=25°C Pulsed 10000 10000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 0.001 0.01 0.1 1 1000 1000 100 0.001 0.01 0.1 1 100 0.001 0.01 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m ] 10000 VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -1.5V Pulsed 10000 VGS= -1.2V Pulsed 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 1 100 0.001 0.01 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current( Ⅴ) 0.1 100 0.001 0.01 DRAIN-CURRENT : -ID[A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current( Ⅵ) 0.1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅳ) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.11 - Rev.A RZB002P02 　 Data Sheet FORWARD TRANSFER ADMITTANCE : |Yfs| [S] REVERSE DRAIN CURRENT : -Is [A] 1.0 VDS= -10V Pulsed 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[ ] VGS=0V Pulsed 5 Ta=25°C Pulsed ID= -0.2A 3 ID= -0.01A 2 4 Ta=-25°C Ta=25°C Ta=75°C Ta=125° 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0.1 DRAIN-CURRENT : -ID[A] Fig.10 Forward Transfer Admittance vs. Drain Current 1 0.01 0 0.5 1 1.5 0 0 2 4 6 8 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 td(off SWITCHING TIME : t [ns] 100 t GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD= -10V VGS=-4.5V RG=10 Pulsed 5 1000 Ta=25°C f=1MHz VGS=0V 100 3 2 10 1 t 1 0.01 td(on Ta=25°C VDD= -10V ID= -0.2A RG=10Ω Pulsed 0 0.5 1 1.5 CAPACITANCE : C [pF] 4 Ciss 10 Coss Crss 1 0.01 0.1 1 10 100 0 0.1 DRAIN-CURRENT : -ID[A] Fig.13 Switching Characteristics 1 TOTAL GATE CHARGE : Qg [nC] Fig.14 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.11 - Rev.A RZB002P02  Measurement circuits 　 Data Sheet Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.11 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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