RZE002P02TL

RZE002P02 1.2V Drive Pch MOSFET RZE002P02 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) EMT3 0.7 1.6 zFeatures 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. 0.55 0.3 (1) 0.2 0.2 0.5 0.5 1.0 zApplications Switching (1)Source (2)Gate (3)Drain zPackage specifications Abbreviated symbol : YK zInner circuit Package Type 0.15 0.1Min. (2) 1.6 0.8 (3) Taping (3) TL Code Basic ordering unit (pieces) 3000 RZE002P02 ∗2 (2) ∗1 (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Souce current (Body diode) Total power dissipation Channel temperature Range of storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±10 ±200 ±800 −100 −800 150 150 −55 to +150 Unit V V mA mA mA mA mW °C °C Symbol Limits Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Rth(ch-a) ∗ 833 ∗ Each terminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.06 - Rev.A RZE002P02 Data Sheet zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −20 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state RDS (on)∗ − resistance − − − − − − 0.8 1.0 1.3 1.6 2.4 − 115 10 6 6 4 17 17 1.4 0.3 0.3 ±10 − −1 −1.0 1.2 1.5 2.2 3.5 9.6 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 0.2 − − − − − − − − − − − − − − − − − − − − − Unit µA V µA V Ω Ω Ω Ω Ω S pF pF pF ns ns ns ns nC nC nC Max. −1.2 Unit V Conditions VGS= ±10V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −100µA ID= −200mA, VGS= −4.5V ID= −100mA, VGS= −2.5V ID= −100mA, VGS= −1.8V ID= −40mA, VGS= −1.5V ID= −10mA, VGS= −1.2V VDS= −10V, ID= −200mA VDS= −10V VGS= 0V f=1MHz VDD −10V ID= −100mA VGS= −4.5V RL 100Ω RG= 10Ω VDD −10V RL 50Ω ID= −200mA RG= 10Ω VGS= −4.5V ∗Pulsed zBody diode characteristics (Source-drain) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Conditions IS= −200mA, VGS=0V ∗Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.06 - Rev.A RZE002P02 Data Sheet zElectrical characteristics curves VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 VGS= -1.5V 0.05 VGS= -1.2V VGS= -1.2V 0.1 0.05 0.6 0.8 1 2 4 DRAIN-SOURCE VOLTAGE : -VDS[V] 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 0.01 0.1 100 0.001 1 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State www.rohm.com VGS= -1.2V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 0.01 Resistance vs. Drain Current(Ⅴ) 3/4 1 Resistance vs. Drain Current(Ⅲ) 10000 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) c 2009 ROHM Co., Ltd. All rights reserved. ○ 0.1 DRAIN-CURRENT : -ID [A] VGS= -1.5V Pulsed 100 0.001 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Fig.6 Static Drain-Source On-State 1000 1000 1.5 1000 Resistance vs. Drain Current(Ⅱ) 10000 0.01 VGS= -2.5V Pulsed DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 100 0.001 0.5 Fig.3 Typical Transfer Characteristics 1000 100 0.001 1 0 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] VGS= -1.8V Pulsed Ta= 25°C Ta= - 25°C 0.001 10000 VGS= -4.5V Pulsed Fig.4 Static Drain-Source On-State STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 8 Fig.2 Typical Output Characteristics(Ⅱ) 1000 10000 6 DRAIN-SOURCE VOLTAGE : -VDS[V] 0.01 Ta= 75°C 0.0001 0 Fig.1 Typical Output Characteristics(Ⅰ) 100 0.001 Ta= 125°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.4 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 VDS= -10V Pulsed VGS= -1.0V VGS= -1.0V 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -2.5V VGS= -1.8V VGS= -1.5V 0.15 0 10000 1 Ta=25°C Pulsed VGS= -4.5V DRAIN CURRENT : -ID [A] 0.15 0.2 Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -3.2V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 0.2 100 0.001 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2009.06 - Rev.A Data Sheet VDS= -10V Pulsed Ta=-25°C Ta=25°C Ta=75°C Ta=125°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.5 tf 10 td(on) tr 1 1 1 0 2 0.1 1 3 2 Ta=25°C VDD = -10V VGS=-0.2V RG=10Ω Pulsed 0 0.5 1 Ta=25°C f=1MHz VGS=0V 8 10 Ciss 100 10 Coss Crss 1 0.01 1.5 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] DRAIN-CURRENT : -ID [A] Fig.13 Switching Characteristics 6 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 4 1 4 GATE-SOURCE VOLTAGE : -VGS[V] 1000 0 0.01 ID = -0.01A 2 1.5 5 GATE-SOURCE VOLTAGE : -VGS [V] 100 ID = -0.2A 3 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage Ta=25°C VDD = -10V VGS=-4.5V R G=10Ω Pulsed td(off) 4 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID [A] 1000 Ta=25°C Pulsed 0 0 1 CAPACITANCE : C [pF] 0.1 0.01 Fig.10 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] 5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] 1 1.0 REVERSE DRAIN CURRENT : -Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] RZE002P02 Fig.15 Typical Capacitance vs. Drain-Source Voltage Fig.14 Dynamic Input Characteristics zMeasurement circuit Pulse Width VGS ID VDS VGS 10% 50% 90% RL 50% D.U.T. 10% VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL D.U.T. IG(Const.) RG VDD Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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