RZF013P01

1.5V Drive Pch MOSFET RZF013P01 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) TUMT3 Features 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (1) Gate (2) Source (3) Drain Abbreviated symbol : XC Applications Switching Equivalent circuit (3) Packaging specifications Package Type RZF013P01 Code Basic ordering unit (pieces) Taping TL 3000 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) ∗1 ∗2 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ∗1 ISP PD ∗2 Tch Tstg Limits −12 ±10 ±1.3 ±5.2 −0.6 −5.2 0.8 150 −55 to +150 Unit V V A A A A W °C °C Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board Thermal resistance Parameter Channel to ambient ∗ When mounted on a ceramic board Symbol Rth(ch-a) ∗ Limits 156 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. (1) Gate (2) Source (3) Drain 1/5 2009.02 - Rev.A RZF013P01 Electrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −0.3 − − Static drain-source on-state ∗ RDS (on) resistance − − Forward transfer admittance Yfs ∗ 1.4 Input capacitance Ciss − Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time td (on) ∗ − Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time tf ∗ − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Typ. − − − − 190 280 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 Max. ±10 − −1 −1.0 260 390 600 1060 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG=10Ω VDD −6V RL 4.6Ω ID= −1.3A RG=10Ω VGS= −4.5V Body diode characteristics (Source -drain) (Ta=25°C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.3A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.02 - Rev.A RZF013P01 Electrical characteristic curves 2 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 1.5 2 VGS= -10V VGS= -4.5V VGS= -2.5V VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V VGS= -4.5V VGS= -2.5V VGS= -1.8V 10 Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C Data Sheet VDS= -6V Pulsed DRAIN CURRENT : -ID[A] 1.5 1 VGS= -1.5V 0.1 0.5 VGS= -1.2V VGS= -1.0V 0.01 0 0 0.2 0.4 0.6 0.8 1 0 0 2 4 6 8 10 0.001 0 0.5 1 1.5 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] Ta=25°C Pulsed VGS= -4.5V Pulsed 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 10000 10000 10000 VGS= -2.5V Pulsed 1000 1000 100 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.01 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 1 10 10 10 10 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ ) DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ ) DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] VGS= -1.8V Pulsed 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] 10000 10000 VGS= -1.5V Pulsed 1000 10 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 10 10 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ ) DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ ) DRAIN-CURRENT : -ID[A] Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.02 - Rev.A RZF013P01 10 VGS=0V Pulsed 1 600 500 400 300 200 100 0 0 2 4 6 8 10 ID= -0.6A ID= -1.3A Data Sheet REVERSE DRAIN CURRENT : -Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m Ω] Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 tf 100 td(off) Ta=25°C VDD= -6V VGS= -4.5V RG=10Ω Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 td(on) tr 1 0.01 0.1 0.01 0 0.5 1 1.5 1 10 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.12 Switching Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Ta=25°C VDD= -6V ID= -1.3A RG=10Ω Pulsed 1000 CAPACITANCE : C [pF] 100 Ciss 10 Coss Crss Ta=25°C f=1MHz VGS=0V 10 100 1 0.01 0.1 1 TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.02 - Rev.A RZF013P01 Measurement circuits Data Sheet VGS Pulse Width ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.02 - Rev.A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM Co.,Ltd. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.1