RZQ045P01TR

RZQ045P01 Transistors 1.5V Drive Pch MOSFET RZQ045P01 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) 0~0.1 0.3~0.6 (1) (3) 1pin mark 0.16 0.4 Each lead has same dimensions zApplications Switching Abbreviated symbol : YG zEquivalent circuit zPackaging specifications Package Type Taping (6) (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RZQ045P01 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg ∗1 ∗1 ∗2 Limits −12 ±10 ±4.5 ±12 −1 −12 1.25 150 −55 to +150 Unit V V A A A A W °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 100 °C / W ∗ Mounted on a ceramic board. 1/5 RZQ045P01 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS −12 IDSS Zero gate voltage drain current − Gate threshold voltage VGS (th) −0.3 − ∗ − Static drain-source on-state RDS (on) resistance − − Forward transfer admittance Yfs ∗ 6.5 Ciss Input capacitance − Coss − Output capacitance Crss − Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time Qg ∗ − Total gate charge Qgs ∗ − Gate-source charge Qgd ∗ − Gate-drain charge Typ. Max. − − − − 25 31 39 50 − 2450 320 290 12 75 390 215 31 4.5 4.0 ±10 − −1 −1.0 35 43 58 100 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −4.5A, VGS= −4.5V ID= −2.2A, VGS= −2.5V ID= −2.2A, VGS= −1.8V ID= −0.9A, VGS= −1.5V VDS= −6V, ID= −4.5A VDS= −6V VGS=0V f=1MHz ID= −2.2A VDD −6V VGS= −4.5V RL 2.7Ω RG=10Ω RL 1.3Ω VDD −6V VGS= −4.5V RG=10Ω ID= −4.5A ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −4.5A, VGS=0V ∗Pulsed 2/5 RZQ045P01 Transistors zElectrical characteristic curves 10 8 6 -1.5V -1.4V 4 -1.3V 2 VGS=-1.2V 0 10 -10V -1.6V 8 -1.5V 6 1.4V -1.2V 2 VGS=-1.1V 0.2 0.4 0.6 0.8 1.0 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) 4 6 8 100 VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V 10 1 0.1 1 10 1 0.1 1 VGS= -2.5V Pulsed Ta= -25℃ 10 1 10 0.1 1 DRAIN-CURRENT : -ID[A] 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) VGS= -1.5V Pulsed 100 Ta =125℃ Ta =75℃ Ta =25℃ Ta =-25℃ 10 1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) REVERSE DRAIN CURRENT : -Is [A] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 2.0 Ta=125℃ Ta= 75℃ Ta= 25℃ 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 1.5 1000 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1000 VGS= -1.8V Pulsed 1.0 Fig.3 Typical Transfer Characteristics DRAIN-CURRENT : -ID[A] 1000 1 0.5 Fig.2 Typical Output Characteristics(Ⅱ) 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 0.1 VDS= -6V Pulsed GATE-SOURCE VOLTAGE : -VGS[V] DRAIN-CURRENT : -ID[A] 10 0.01 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= -4.5V Pulsed 10 Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25℃ Pulsed Ta=125℃ 1 0.001 0.0 10 1000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] -1.3V 4 0 0.0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25℃ Pulsed DRAIN CURRENT : -ID[A] Ta=25℃ Pulsed -10V -4.5V -2.5V -1.8V DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 10 100 VGS=0V Pulsed 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 RZQ045P01 Transistors 100 Ta=25℃ Pulsed 60 ID= -2.2A ID= -4.5A 40 20 2 4 6 8 10 1 Ta= 125℃ 0.1 10 0.1 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 4 3.5 3 2.5 Ta=25℃ VDD= -6V ID= -4.5A RG=10Ω Pulsed 2 1.5 1 0.5 0 0 5 10 15 20 25 30 Ciss 1000 Coss Crss SWITCHING TIME : t [ns] Ta=25°C f=1MHz VGS=0V 10000 Fig.12 Dynamic Input Characteristics Ta=25°C VDD= -6V VGS=-4.5V RG=10Ω Pulsed td(off) tf 1000 100 10 td(on) tr 100 1 0.01 0.1 1 10 100 0.01 0.1 1 35 TOTAL GATE CHARGE : Qg [nC] Fig.11 Forward Transfer Admittance vs. Drain Current 100000 10000 CAPACITANCE : C [pF] Ta= -25℃ Ta= 25℃ Ta= 75℃ 0.01 0.01 0 0 4.5 VDS=-6V Pulsed GATE-SOURCE VOLTAGE : -VGS [V] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 80 10 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-CURRENT : -ID[A] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Switching Characteristics 4/5 RZQ045P01 Transistors zMeasurement circuits Pulse Width VGS ID VGS VDS 10% 50% 90% RL 50% 10% D.U.T. 10% RG VDD VDS 90% td(on) tr 90% td(off) ton tf toff Fig.16 Switching Waveforms Fig.15 Switching Time Measurement Circuit VG VGS ID VDS RL IG(Const) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.17 Gate Charge Measurement Circuit Fig.18 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment . Please consider to design ESD protection circuit. 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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