SCS112AG

SCS112AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 SiC Schottky Barrier Diodes SCS112AG [ Product description ] Switching loss reduced, enabling high-speed switching . (2-pin package) Outline Features • Shorter recovery time • Reduced temperature dependence • High-speed switching possible Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Average rectified forward current IO(A) Forward current surge peak IFSM(A) Junction temperature Tj(ºC) Storage temperature Tstg(ºC) Standard value 600 600 12 48 60Hz/1cyc 150 -55 to +150 Conditions 9.8x15.4(t=4.4) Dimensions Equivalent circuit diagram *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Copyright © 1997-2011 ROHM CO.,LTD. http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs112ag/print.html 2/16/2011