SCS308AH
Datasheet
SiC Schottky Barrier Diode
lOutline
VR
650V
IF
8A
QC
21nC
TO-220ACP
(1)
(2)
lFeatures
(3)
lInner circuit
(1)
1) Shorter recovery time
2) Reduced temperature dependence
(1) Cathode
(2) Cathode
(3) Anode
3) High-speed switching possible
4) High surge current capability
(2)
(3)
lPackaging specifications
Packaging
lConstruction
Silicon carbide epitaxial planar type
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
50
Packing code
C9
Marking
SCS308AH
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
VRM
650
V
Reverse voltage (DC)
VR
650
V
IF
8
A
67
A
57
A
250
A
36 *1
A
Continuous forward current
Surge nonrepetitive forward
current
(Tc= 135°C)
PW=10ms sinusoidal, Tj=25°C
PW=10ms sinusoidal, Tj=150°C
PW=10ms square, Tj=25°C
IFRM
Repetitive peak forward current
2
1≦PW≦10ms, Tj=25°C
i t value
IFSM
∫i dt
2
1≦PW≦10ms, Tj=150°C
22
A2s
16
A2s
Total power disspation
PD
57 *2
W
Junction temperature
Tj
175
°C
Tstg
-55 to +175
°C
Range of storage temperature
*1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C
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Datasheet
SCS308AH
lElectrical characteristics (Tj = 25°C)
Values
Parameter
Symbol
VDC
DC blocking voltage
VF
Forward voltage
IR
Reverse current
Total capacitance
Conditions
Unit
Min.
Typ.
Max.
650
-
-
V
IF=8A,Tj=25°C
-
1.35
1.50
V
IF=8A,Tj=150°C
-
1.44
1.71
V
IF=8A,Tj=175°C
-
1.50
-
V
VR=650V,Tj=25°C
-
0.024
40
mA
VR=650V,Tj=150°C
-
1.6
160
mA
VR=650V,Tj=175°C
-
4.8
-
mA
VR=1V,f=1MHz
-
400
-
pF
VR=650V,f=1MHz
-
36
-
pF
IR =40mA
C
Total capacitive charge
QC
VR=400V,di/dt=350A/ms
-
21
-
nC
Switching time
tC
VR=400V,di/dt=350A/ms
-
15
-
ns
L=1mH
-
110
-
mJ
Non-repetetive
Avaranche Energy
Eava
lThermal characteristics
Values
Parameter
Symbol
Conditions
Rth(j-c)
Thermal resistance
Unit
-
Min.
Typ.
Max.
-
1.8
2.6
K/W
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
1.89×10
-2
Rth2
1.81×10
-1
Rth3
1.55×10
0
Tj
PD
Unit
K/W
Value
Cth1
1.95×10
-4
Cth2
8.01×10
-4
Cth3
1.82×10
-3
Rth,n
Rth1
Cth1
Symbol
Cth2
Unit
Ws/K
Tc
Cth,n
Ta
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TSQ50221-SCS308AH
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Datasheet
SCS308AH
lElectrical characteristic curves
Fig.2 VF - IF Characteristics
Fig.1 VF - IF Characteristics
12
100
10
Forward Current : IF [A]
Forward Current : IF [A]
10
1
Ta= -25ºC
0.1
Ta=25ºC
Ta=75ºC
0.01
Ta=125ºC
Ta=175ºC
0.0
0.5
1.0
1.5
Ta=25ºC
Ta=175ºC
8
Ta=125ºC
6
Ta=75ºC
4
2
0
0.001
2.0
0.0
2.5
0.5
Forward Voltage : VF [V]
1.0
1.5
2.0
2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
Fig.4 VR-Ct Characteristics
10
Ta=125ºC
1
Ta=75ºC
Ta=25ºC
0.1
Ta= -25ºC
0.01
0.001
0
200
400
600
Capacitance Between Terminals : Ct [pF]
1,000
Ta=175ºC
Reverse Current : IR [mA]
Ta= -25ºC
Pulsed
Pulsed
Reverse Voltage : VR [V]
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TSZ22111・15・001
100
10
Ta=25ºC
f=1MHz
1
0.01
0.1
1
10
100
1000
Reverse Voltage : VR [V]
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TSQ50221-SCS308AH
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Datasheet
SCS308AH
lElectrical characteristic curves
Fig.6 Power Dissipation
10
70
Ta=25ºC
Single Pulse
60
Power Dissipation [W]
Transient Thermal Resistance : ZthJC [K/W]
Fig.5 Typical Transient Thermal Resistance
vs. Pulse Width
1
0.1
50
40
30
20
10
0.01
0.000001
0
0.001
1
25
50
Pulse Width : PW [s]
90
90
80
80
Peak Forward Current : IP [A]
Peak Forward Current : IP [A]
100
70
Duty=0.1
Duty=0.2
40
30
Duty=0.5
20
10
Duty=0.8
D.C.
0
25
50
75
100
125
150
175
Fig.8*4 Typical peak forward current
derating curve IP - Tc (Not guaranteed)
100
50
100
Case Temperature : Tc [ºC]
Fig.7*3 Maximum peak forward current
derating curve IP - Tc
60
75
Duty=0.1
70
Duty=0.2
60
50
Duty=0.5
40
30
20
Duty=0.8
10
D.C.
0
125
150
175
25
50
75
100
125
150
175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
*3 Based on max Vf, max Rth(j-c)
Valid for switching of above 10kHz,
excluding D.C. curve.
*4 Based on typ Vf, typ Rth(j-c)
Typical value, not guaranteed Valid
for switching of above 10kHz,
excluding D.C. curve
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TSQ50221-SCS308AH
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Datasheet
SCS308AH
lElectrical characteristic curves
Fig.10 Typical capacitance store energy
1000
10
Capacitance stored energy : EC[mJ]
Surge non-repetitive forward current : IFSM [A]
Fig.9 Surge non-repetitive forward current
vs. Pulse width (Sinusoidal waveform)
100
Ta=25ºC
Single Pulse
10
0.00001
9
8
7
6
5
4
3
2
1
0
0.0001
0.001
0.01
0
200
Pulse Width : PW [s]
400
600
Reverse Voltage : VR [V]
lSymplified forward characteristic model
Fig.11 Equivalent forward current curve
Forward Current : IF
VF = Vth + Rdiff IF
Vth ( Tj ) = a0 + a1 Tj
Rdiff ( Tj ) = b0 + b1 Tj + b2 Tj2
Symbol
Vth
1/Rdiff
Unit
a0
9.66×10
-1
V
a1
-1.1×10
-3
V/°C
b0
4.40×10
-2
W
b1
9.33×10
-5
W/°C
b2
9.60×10
-7
W/°C2
Tj in ºC; -55 ºC < Tj < 175ºC ; IF < 16 A
Forward Voltage : VF
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Typical Value
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TSQ50221-SCS308AH
18.Nov.2019-Rev.002
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
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4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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