SCS308APC9

SCS308AP Datasheet SiC Schottky Barrier Diode Outline VR 650V IF 8A QC 21nC TO-220ACP (1) (2) Features (3) Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible 4) High surge current capability (2) (3) Packaging specifications Packaging Construction Silicon carbide epitaxial planar type Tube Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS308AP Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR 650 V IF 8 A 67 A 57 A 250 A 36 *1 A Continuous forward current Surge nonrepetitive forward current (Tc= 135°C) PW=10ms sinusoidal, Tj=25°C PW=10ms sinusoidal, Tj=150°C PW=10s square, Tj=25°C IFRM Repetitive peak forward current 2 1≦PW≦10ms, Tj=25°C i t value IFSM ∫i dt 2 1≦PW≦10ms, Tj=150°C 22 2 As 16 A2s Total power disspation PD 57 *2 W Junction temperature Tj 175 °C Tstg 55 to 175 °C Range of storage temperature *1 Tc=100°C, Tj=150°C, Duty cycle=10% *2 Tc=25°C www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2017.07 - Rev.D Datasheet SCS308AP Electrical characteristics (Tj = 25°C) Values Parameter Symbol VDC DC blocking voltage IR Reverse current Total capacitance Min. Typ. Max. 650 - - V IF=8A, Tj=25°C - 1.35 1.50 V IF=8A, Tj=150°C - 1.44 1.71 V IF=8A, Tj=175°C - 1.50 - V VR=650V, Tj=25°C - 0.024 40 A VR=650V, Tj=150°C - 1.6 160 A VR=650V, Tj=175°C - 4.8 - A VR=1V, f=1MHz - 400 - pF VR=650V, f=1MHz - 36 - pF IR =50A VF Forward voltage Unit Conditions C Total capacitive charge QC VR=400V, di/dt=350A/s - 21 - nC Switching time tC VR=400V, di/dt=350A/s - 15 - ns L=1mH - 110 - mJ Non-repetetive Avaranche Energy Eava Thermal characteristics Values Parameter Symbol Conditions Rth(j-c) Thermal resistance Unit Min. Typ. Max. - 1.8 2.6 - °C/W Typical Transient Thermal Characteristics Symbol Value Rth1 1.89E-02 Rth2 1.81E-01 Rth3 1.55E+00 Unit K/W Tj PD Symbol Value Cth1 1.95E-04 Cth2 8.01E-04 Cth3 1.82E-03 Rth,n Rth1 Cth1 Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/5 2017.07 - Rev.D Datasheet SCS308AP Electrical characteristic curves Fig.2 VF - IF Characteristics Fig.1 VF - IF Characteristics 12 100 Pulsed 10 Forward Current : IF [A] Forward Current : IF [A] 10 1 Ta= 25ºC 0.1 Ta=25ºC Ta=75ºC 0.01 Ta=125ºC Ta=175ºC 0.0 0.5 1.0 1.5 Ta=25ºC Ta=175ºC 8 Ta=125ºC 6 Ta=75ºC 4 　2 0 0.001 2.0 0.0 2.5 0.5 Forward Voltage : VF [V] 1.0 1.5 2.0 2.5 Forward Voltage : VF [V] Fig.3 VR - IR Characteristics Fig.4 VR-Ct Characteristics 10 Ta=125ºC 1 Ta=75ºC Ta=25ºC 0.1 Ta= 25ºC 0.01 0.001 0 200 400 600 Capacitance Between Terminals : Ct [pF] 1,000 Ta=175ºC Reverse Current : IR [A] Ta= 25ºC Pulsed Reverse Voltage : VR [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 100 10 Ta=25ºC f=1MHz 1 0.01 0.1 1 10 100 1000 Reverse Voltage : VR [V] 3/5 2017.07 - Rev.D Datasheet SCS308AP Fig.5 Typical Transient Thermal Resistance vs. Pulse Width Fig.6 Power Dissipation 10 70 Ta=25ºC Single Pulse 60 Power Dissipation [W] Transient Thermal Resistance : Rth(j-c) [ºC/W] Electrical characteristic curves 1 0.1 50 40 30 20 10 0.01 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1 0 25 50 Pulse Width : PW [s] 90 90 Peak Forward Current : IP [A] Peak Forward Current : IP [A] 100 80 Duty=0.1 60 Duty=0.2 40 30 Duty=0.5 20 10 D.C. 0 25 50 75 100 175 80 70 Duty=0.2 60 50 Duty=0.5 40 30 20 Duty=0.8 D.C. 0 125 150 175 25 50 75 100 125 150 175 Case Temperature : Tc [ºC] Case Temperature : Tc [ºC] *4 Based on typ Vf, typ Rth(j-c) Typical value, not guaranteed Valid for switching of above 10kHz, excluding D.C. curve *3 Based on max Vf, max Rth(j-c) Valid for switching of above 10kHz, excluding D.C. curve. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 150 Duty=0.1 10 Duty=0.8 125 Fig.8*4 Typical peak forward current derating curve IP - Tc (Not guaranteed) 100 50 100 Case Temperature : Tc [ºC] Fig.7*3 Maximum peak forward current derating curve IP - Tc 70 75 4/5 2017.07 - Rev.D Datasheet SCS308AP Electrical characteristic curves Fig.10 Typical capacitance store energy 1000 10 Capacitance stored energy : EC[J] Surge non-repetitive forward current : IFSM [A] Fig.9 Surge non-repetitive forward current vs. Pulse width (Sinusoidal waveform) 100 Ta=25ºC Single Pulse 10 1.E-5 9 8 7 6 5 4 3 2 1 0 1.E-4 1.E-3 1.E-2 0 200 Pulse Width : PW [s] 400 600 Reverse Voltage : VR [V] Symplified forward characteristic model Fig.11 Equivalent forward current curve Forward Current : IF VF = Vth + Rdiff IF Vth (Tj) = a0 + a1 Tj Rdiff (Tj) = b0 + b1 Tj + b2 Tj2 Vth 1/Rdiff Typical Value Unit a0 9.66E-01 V a1 -1.10E-03 V/°C b0 4.40E-02  b1 9.33E-05 /°C b2 9.60E-07 /°C 2 Tj in ºC; -55 ºC < Tj