SCS310AHGC9

SCS310AH Datasheet SiC Schottky Barrier Diode lOutline VR 650V IF 10A QC 24nC TO-220ACP (1) (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible 4) High surge current capability (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planar type Tube Reel size (mm) - Tape width (mm) - Type Basic ordering unit (pcs) 50 Packing code C9 Marking SCS310AH lAbsolute maximum ratings (Tvj=25°C unless otherwise specified) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 650 V Reverse voltage (DC) VR 650 V IF 10 A 82 A 69 A 300 A Continuous forward current Surge nonrepetitive forward current (Tc= 135°C) *1 PW=10ms sinusoidal, Tvj=25°C PW=10ms sinusoidal, Tvj=150°C PW=10ms square, Tvj=25°C IFRM Repetitive peak forward current 2 i t value IFSM 1