SCT2080KEHR
Datasheet
Automotive Grade N-channel SiC power MOSFET
lOutline
VDSS
1200V
RDS(on) (Typ.)
80mΩ
ID
40A
lFeatures
TO-247N
lInner circuit
1) Low on-resistance
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
* Body Diode
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
7) Qualified to AEC-Q101
Package
TO-247N
lApplication
Packing
・Automobile
Reel size (mm)
-
Tape width (mm)
-
・Switch mode power supplies
Tube
Type
Basic ordering unit (pcs)
Packing code
30
C11
Marking
SCT2080KE
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
1200
V
Tc = 25°C
ID *1
40
A
Tc = 100°C
ID *1
28
A
80
A
-6 to +22
V
-10 to +26
V
262
W
130
W
Tj
175
°C
Tstg
-55 to +175
°C
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge ˂ 300nsec)
Total power dissipation
*3
VGSS_surge
TC=25°C, See Fig.1
PD
TC=100°C, See Fig.1
Junction temperature
Range of storage temperature
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Datasheet
SCT2080KEHR
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Drain - Source breakdown
voltage
V(BR)DSS
Conditions
Unit
Min.
Typ.
Max.
1200
-
-
V
Tj = 25°C
-
1
10
μA
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
-100
nA
1.6
2.8
4.0
V
VGS (th)
Gate threshold voltage
VDS = VGS, ID = 4.4mA
lThermal resistance
Values
Parameter
Symbol
RthJC
Thermal resistance, junction - case
Unit
Min.
Typ.
Max.
-
0.44
0.57
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
7.80E-02
Rth2
1.97E-01
Rth3
1.62E-01
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TSZ22111・15・001
Unit
K/W
2/12
Symbol
Value
Cth1
5.00E-03
Cth2
1.80E-02
Cth3
2.49E-01
Unit
Ws/K
TSQ50211-SCT2080KEHR
28.Mar.2019 - Rev.002
Datasheet
SCT2080KEHR
lElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
-
80
117
Tj = 125°C
-
125
-
f = 1MHz, open drain
-
6.3
-
Ω
S
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
RDS(on) *4 Tj = 25°C
RG
Transconductance
gfs *4
VDS = 10V, ID = 10A
-
3.7
-
Input capacitance
Ciss
VGS = 0V
-
2080
-
Output capacitance
Coss
VDS = 800V
-
77
-
Reverse transfer capacitance
Crss
f = 1MHz
-
16
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
-
116
-
Turn - on delay time
td(on) *4
VDD = 400V, VGS = 18V
-
35
-
tr *4
ID = 10A
-
36
-
td(off) *4
RL = 40Ω
-
76
-
tf *4
RG = 0Ω
-
22
-
-
174
-
Rise time
Turn - off delay time
Fall time
Turn - on switching loss
Turn - off switching loss
Eon *4
Eoff *4
VDD = 600V, ID=10A
VGS = 18V/0V
RG = 0Ω, L=500μH
*Eon includes diode
reverse recovery
mΩ
pF
pF
ns
μJ
-
51
-
lGate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *4
VDD = 400V
-
106
-
Gate - Source charge
Qgs *4
ID = 10A
-
27
-
Gate - Drain charge
Qgd
VGS = 18V
-
31
-
VDD = 400V, ID = 10A
-
9.7
-
Gate plateau voltage
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TSZ22111・15・001
*4
V(plateau)
3/12
nC
V
TSQ50211-SCT2080KEHR
28.Mar.2019 - Rev.002
Datasheet
SCT2080KEHR
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Body diode continuous,
forward current
Symbol
IS
Conditions
*1
Unit
Min.
Typ.
Max.
-
-
40
A
-
-
80
A
-
4.6
-
V
-
31
-
ns
-
44
-
nC
-
2.3
-
A
Tc = 25°C
Body diode direct current,
pulsed
ISM *2
Forward voltage
VSD *4
Reverse recovery time
trr *4
Reverse recovery charge
Qrr *4
Peak reverse recovery current
Irrm *4
VGS = 0V, IS = 10A
IF = 10A, VR = 400V
di/dt = 150A/μs
*1 Limited only by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
*4 Pulsed
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
300
PW = 100us
250
Drain Current : ID [A]
Power Dissipation : PD [W]
PW = 1ms
200
150
100
10
Operation in this
area is limited
by RDS(ON)
1
PW = 10ms
PW = 100ms
50
Ta = 25ºC
Single Pulse
0.1
0
25
75
125
175
0.1
225
Junction Temperature : Tj [ºC]
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]
1
Ta = 25ºC
Single
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
40
VGS= 20V
35
VGS= 16V
VGS= 18V
VGS= 14V
VGS= 14V
16
Drain Current : ID [A]
25
20
VGS= 12V
15
VGS= 10V
10
Ta = 25ºC
Pulsed
5
VGS= 20V
18
30
Drain Current : ID [A]
VGS= 18V VGS= 16V
20
VGS= 12V
14
12
10
8
6
VGS= 10V
4
Ta = 25ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(I)
Fig.7 Typical Output Characteristics(II)
40
20
VGS= 20V
VGS= 18V
Drain Current : ID [A]
VGS= 12V
VGS= 16V
VGS= 14V
20
VGS= 18V
16
30
25
VGS= 20V
18
35
Drain Current : ID [A]
1
VGS = 10V
15
10
Ta = 150ºC
Pulsed
5
VGS= 16V
14
VGS= 14V
12
VGS= 10V
10
VGS= 12V
8
6
4
Ta = 150ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
Drain - Source Voltage : VDS [V]
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1
2
3
4
5
Drain - Source Voltage : VDS [V]
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TSQ50211-SCT2080KEHR
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.9 Typical Transfer Characteristics (II)
Fig.8 Typical Transfer Characteristics
40
100
VDS = 10V
Pulsed
30
Drain Current : ID [A]
10
Drain Current : ID [A]
VDS = 10V
Pulsed
35
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
1
0.1
25
20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
15
10
5
0
0.01
0
2
4
6
8
0
10 12 14 16 18 20
2
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
5
10
VDS = 10V
Pulsed
VDS = 10V
ID = 10mA
4.5
4
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
4
3.5
3
2.5
2
1.5
1
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.5
0
-50
0
50
100
0.01
0.01
150
Junction Temperature : Tj [ºC]
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0.1
1
10
100
Drain Current : ID [A]
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Ta = 25ºC
0.6
0.4
ID = 20A
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
0.15
0.8
VGS = 18V
Pulsed
ID = 20A
0.1
ID = 10A
0.05
0.2
ID = 10A
0
6
8
10
12
14
16
18
20
22
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Gate - Source Voltage : VGS [V]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.1
1
10
100
Drain Current : ID [A]
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.16 Coss Stored Energy
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
40
10000
Ciss
1000
Capacitance : C [pF]
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
Coss
Crss
100
10
Ta = 25ºC
f = 1MHz
VGS = 0V
30
20
10
0
1
0.1
1
10
100
0
1000
400
600
800
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
20
10000
1000
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0Ω
Pulsed
tf
Switching Time : t [ns]
200
td(off)
100
tr
10
td(on)
1
Ta = 25ºC
VDD = 400V
ID = 10A
Pulsed
15
10
5
0
0.01
0.1
1
10
100
0
Drain Current : ID [A]
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20
40
60
80
100
120
Total Gate Charge : Qg [nC]
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
1200
300
200
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0Ω
L=500μH
1000
Switching Energy : E [μJ]
Switching Energy : E [μJ]
1100
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0Ω
L=500μH
250
Eon
150
100
50
Eoff
900
800
700
Eon
600
500
400
300
200
Eoff
100
0
0
0
200
400
600
800
1000
0
5
10
15
20
25
30
35
Drain - Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
500
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=500μH
450
Switching Energy : E [μJ]
400
350
Eon
300
250
200
150
Eoff
100
50
0
0
5
10
15
20
25
30
External Gate Resistance : R G [Ω]
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Datasheet
SCT2080KEHR
lElectrical characteristic curves
Fig.22 Body Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Body Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Body Diode Forward Current : IS [A]
100
10
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
0.01
Ta = 25ºC
di / dt = 150A / μs
VR = 400V
VGS = 0V
Pulsed
100
10
0
1
2
3
4
5
6
7
8
1
Source - Drain Voltage : VSD [V]
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10
100
Body Diode Forward Current : IS [A]
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Datasheet
SCT2080KEHR
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
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Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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