SCT2120AFC

SCT2120AF Datasheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 120mΩ ID 29A PD 165W lFeatures TO220AB (1) (2) (3) lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing lApplication ・Solar inverters Tube Reel size (mm) - Tape width (mm) - Type ・DC/DC converters Basic ordering unit (pcs) 50 ・Switch mode power supplies Packing code C ・Induction heating Marking SCT2120AF ・Motor drives lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit VDSS 650 V Tc = 25C ID *1 29 A Tc = 100C ID *1 20 A ID,pulse *2 72 A VGSS -6 to 22 V -10 to 26 V Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge ˂ 300nsec) VGSS-surge *3 Power dissipation (Tc = 25C) PD 165 W Junction temperature Tj 175 C Tstg -55 to +175 C Range of storage temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristics (Ta = 25C) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 650 - - V Tj = 25C - 1 10 μA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V VGS (th) Gate threshold voltage VDS = VGS, ID = 3.3mA lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 0.70 0.91 C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 C lTypical Transient Thermal Characteristics Symbol Value Rth1 9.61E-02 Rth2 4.04E-01 Rth3 1.96E-01 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Unit K/W 2/12 Symbol Value Cth1 1.55E-03 Cth2 5.23E-03 Cth3 8.33E-02 Unit Ws/K TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 120 156 Tj = 125°C - 149 - f = 1MHz, open drain - 13.8 - Ω S VGS = 18V, ID = 10A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25C RG Transconductance gfs *4 VDS = 10V, ID = 10A - 2.7 - Input capacitance Ciss VGS = 0V - 1200 - Output capacitance Coss VDS = 500V - 90 - Reverse transfer capacitance Crss f = 1MHz - 13 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 300V - 115 - Turn - on delay time td(on) *4 VDD = 300V, ID = 10A - 22 - VGS = 18V/0V - 31 - td(off) *4 RL = 30Ω - 60 - tf *4 RG = 0Ω - 19 - - 61 - tr *4 Rise time Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss Eon *4 Eoff *4 VDD = 300V, ID=10A VGS = 18V/0V RG = 0Ω, L=500µH *Eon includes diode reverse recovery mΩ pF pF ns µJ - 41 - lGate Charge characteristics (Ta = 25C) Values Parameter Symbol Total gate charge Qg *4 Gate - Source charge Qgs Gate - Drain charge Qgd *4 Gate plateau voltage V(plateau) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *4 Conditions Unit Min. Typ. Max. VDD = 300V - 61 - ID = 10A - 14 - VGS = 18V - 21 - VDD = 300V, ID = 10A - 10.4 - 3/12 nC V TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lBody diode electrical characteristics (Source-Drain) (Ta = 25C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 29 A - - 72 A - 4.3 - V - 33 - ns - 53 - nC - 3.0 - A Tc = 25C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm VGS = 0V, IS = 10A IF = 10A, VR = 400V di/dt = 160A/s *4 *1 Limited only by maximum temperature allowed. *2 PW  10s, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Pulsed www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 180 100 Operation in this area is limited by RDS(ON) 140 Drain Current : ID [A] Power Dissipation : PD [W] 160 120 100 80 60 40 10 PW = 100s PW = 1ms PW = 10ms 1 PW = 100ms Ta = 25ºC Single Pulse 20 0.1 0 25 75 125 175 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Case Temperature : TC [ºC] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.5 Typical Output Characteristics(II) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 VGS= 20V VGS= 18V VGS= 16V Ta = 25ºC Pulsed Drain Current : ID [A] Drain Current : ID [A] Fig.4 Typical Output Characteristics(I) VGS= 14V VGS= 12V 10V 8V 0 2 4 6 8 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 VGS= 20V VGS= 18V VGS= 16V VGS= 14V VGS= 12V VGS= 10V VGS= 8V 0 10 Drain Current : ID [A] Drain Current : ID [A] VGS= 20V VGS= 18V VGS= 16V VGS= 14V VGS= 12V VGS= 10V 0 2 4 6 Ta = 150ºC Pulsed 8 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 3 4 5 VGS= 20V VGS= 18V VGS= 16V VGS= 14V VGS= 12V VGS= 10V VGS= 8V Ta = 150ºC Pulsed 0 10 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 Fig.7 Tj = 150ºC Typical Output Characteristics(II) Fig.6 Tj = 150ºC Typical Output Characteristics(I) VGS= 8V 1 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 Ta = 25ºC Pulsed 6/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 10 24 22 VDS = 10V Pulsed 1 18 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 16 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 20 0.01 14 12 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 10 8 6 4 2 0.001 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.11 Transconductance vs. Drain Current Fig.10 Gate Threshold Voltage vs. Junction Temperature 10 5 VDS = VGS ID = 3.3mA 4.5 4 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 3.5 3 2.5 2 VDS = 10V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC 0.1 1.5 1 0.5 0 -50 0 50 100 150 200 0.1 1 10 Drain Current : ID [A] Junction Temperature : Tj [ºC] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0.01 0.01 7/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage 0.6 Ta = 25ºC Pulsed 0.5 0.4 0.3 ID = 21A 0.2 ID = 10A 0.1 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [Ω] Gate - Source Voltage : VGS [V] Static Drain - Source On-State Resistance : RDS(on) [Ω] lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.3 VGS = 18V Pulsed 0.25 0.2 ID = 20A 0.15 ID = 10A 0.1 0.05 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 25 10000 Capacitance : C [pF] 1000 Coss Stored Energy : EOSS [µJ] Ta = 25ºC Ciss 100 Coss Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 20 15 10 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 400 600 800 Drain - Source Voltage : VDS [V] Fig.18 Dynamic Input Characteristics Fig.17 Switching Characteristics 20 10000 1000 td(off) Ta = 25ºC VDD = 300V VGS = 18V RG = 0Ω Gate - Source Voltage : VGS [V] tf Switching Time : t [ns] 200 100 td(on) 10 tr 1 0.1 1 10 100 15 10 5 0 0 10 20 30 40 50 60 70 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Ta = 25ºC VDD =300V ID = 10A Pulsed 9/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 500 120 Switching Energy : E [µJ] 450 Ta = 25ºC ID=10A VGS = 18V/0V RG = 0Ω L=500µH 100 90 80 Ta = 25ºC VDD=300V VGS = 18V/0V RG = 0Ω L=500µH 400 Switching Energy : E [µJ] 110 Eon 70 60 50 Eoff 40 30 20 350 Eon 300 250 200 150 100 Eoff 50 10 0 0 0 100 200 300 400 500 Drain - Source Voltage : VDS [V] 0 5 10 15 20 25 30 Drain - Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance Switching Energy : E [µJ] 200 Ta = 25ºC VDD=300V ID=10A VGS = 18V/0V L=500µH 150 Eon 100 Eoff 50 0 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0.1 Ta = 25ºC di / dt = 160A / µs VR = 400V VGS = 0V Pulsed 100 10 0.01 0 1 2 3 4 5 6 7 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Datasheet SCT2120AF lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50222-SCT2120AF 22.Feb.2019 - Rev.003 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. 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