SCT2280KEGC11

SCT2280KE Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 280mΩ ID 14A PD 108W TO-247N (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating ; RoHS compliant Package TO-247N Packing lApplication • Solar inverters Tube Reel size (mm) - Tape width (mm) - Type • DC/DC converters Basic ordering unit (pcs) • Induction heating Packing code • Motor drives Marking 30 C11 SCT2280KE lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 14 A Tc = 100°C ID *1 10 A 35 A VGSS -6 to 22 V VGSS-surge*3 -10 to 26 V Power dissipation (Tc = 25°C) PD 108 W Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Range of storage temperature www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 *2 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 μA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V VGS (th) Gate threshold voltage VDS = VGS, ID = 1.4mA lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 1.07 1.39 °C/W Thermal resistance, junction - ambient RthJA - - 50 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lTypical Transient Thermal Characteristics Symbol Value Rth1 1.00E-01 Rth2 6.62E-01 Rth3 3.04E-01 www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Unit K/W 2/12 Symbol Value Cth1 8.61E-04 Cth2 2.84E-03 Cth3 5.59E-02 Unit Ws/K TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 280 364 Tj = 125°C - 388 - f = 1MHz, open drain - 17 - Ω S VGS = 18V, ID = 4A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25°C RG Transconductance gfs *4 VDS = 10V, ID = 4A - 1.4 - Input capacitance Ciss VGS = 0V - 667 - Output capacitance Coss VDS = 800V - 27 - Reverse transfer capacitance Crss f = 1MHz - 5 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 500V - 41 - Turn - on delay time td(on) *4 VDD = 400V, VGS = 18V - 19 - ID = 4A - 19 - RL = 100Ω - 47 - RG = 0Ω - 29 - - 57 - tr *4 Rise time Turn - off delay time td(off) *4 tf *4 Fall time Turn - on switching loss Turn - off switching loss Eon *4 Eoff *4 VDD = 600V, ID=4A VGS = 18V/0V RG = 0Ω, L=500μH *Eon includes diode reverse recovery mW pF pF ns μJ - 20 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Total gate charge Qg *4 Gate - Source charge Qgs Gate - Drain charge Qgd *4 Gate plateau voltage V(plateau) www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *4 Conditions Unit Min. Typ. Max. VDD = 400V - 36 - ID = 4A - 9 - VGS = 18V - 12 - VDD = 400V, ID = 4A - 9.8 - 3/12 nC V TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 14 A - - 35 A - 4.0 - V - 22 - ns - 21 - nC - 2.0 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm VGS = 0V, IS = 4A IF = 4A, VR = 400V di/dt = 160A/μs *4 *1 Limited only by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform *4 Pulsed www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 120 100 PW = 1ms Drain Current : ID [A] Power Dissipation : PD [W] PW = 100ms 80 60 40 PW = 10ms 10 PW = 100ms Operation in this area is limited by RDS(on) 1 20 Ta=25ºC Single Pulse 0 0.1 25 75 125 175 0.1 Case Temperature : TC [ºC] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 Ta=25ºC Single Pulse 1 0.1 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) 14 20V 14V 6 18V 10 Drain Current : ID [A] Drain Current : ID [A] 7 20V 12 Fig.5 Typical Output Characteristics(II) Ta=25ºC Pulsed 16V 8 6 12V 4 10V 2 VGS= 8V 16V 5 12V 14V 4 3 10V 2 1 0 VGS= 8V 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 7 14 20V Ta=150ºC Pulsed 12 16V 10 Ta=150ºC Pulsed 6 18V Drain Current : ID [A] Drain Current : ID [A] Ta=25ºC Pulsed 18V 12V 14V 8 10V 6 4 VGS= 8V 2 20V 18V 12V 16V 5 14V 10V 4 3 VGS= 8V 2 1 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 10 10 VDS= 10V Plused VDS= 10V Plused 9 Drain Current : ID [A] 8 Drain Current : ID [A] 1 0.1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 7 6 5 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 4 3 2 1 0.001 0 0 2 4 6 8 10 12 14 16 18 20 0 2 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 5 10 VDS= 10V Plused VDS = 10V ID = 1.2mA 4.5 Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 4 3.5 3 2.5 2 1.5 1 1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.5 0 -50 0 50 100 150 0.01 0.01 200 Junction Temperature : Tj [ºC] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0.1 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves 1.2 Ta=25ºC Pulsed 1.1 1 0.9 0.8 0.7 ID = 8A ID = 4A 0.6 0.5 0.4 0.3 0.2 0.1 0 6 8 10 12 14 16 18 20 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 22 Gate - Source Voltage : VGS [V] 0.8 0.7 VGS= 18V Plused 0.6 0.5 ID = 8A 0.4 0.3 ID = 4A 0.2 0.1 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS= 18V Plused Ta=150ºC Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 COSS Stored Energy 12 COSS Stored Energy : EOSS [μJ] Capacitance : C [pF] 10000 Ciss 1000 100 Coss 10 Crss Ta=25ºC f = 1MHz VGS = 0V 1 Ta=25ºC 10 8 6 4 2 0 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 200 400 600 800 Drain - Source Voltage : VDS [V] Fig.18 Dynamic Input Characteristics 10000 20 Ta = 25ºC VDD = 400V VGS = 18V RG= 0W Pulsed tf 1000 Gate - Source Voltage : VGS [V] Switching Time : t [ns] Fig.17 Switching Characteristics td(off) 100 td(on) 10 tr Ta = 25ºC VDD= 400V ID= 4A Pulsed 15 10 5 0 1 0.1 1 10 0 100 10 15 20 25 30 35 40 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 9/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 300 Ta = 25ºC ID= 4A VGS = 18V/0V RG= 0Ω L=500μH Switching Energy : E [μJ] 100 80 Switching Energy : E [μJ] 120 Eon 60 40 Eoff 20 Ta = 25ºC VDD= 600V VGS = 18V/0V RG= 0Ω L=500μH 250 200 Eon 150 Eoff 100 50 0 0 0 200 400 600 800 1000 0 Drain - Source Voltage : VDS [V] 2 4 6 8 10 12 14 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 160 Ta = 25ºC VDD= 600V ID= 4A VGS = 18V/0V L=500μH Switching Energy : E [μJ] 140 120 Eon 100 80 60 Eoff 40 20 0 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 10 1000 VGS=0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 1 Ta=150ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 Ta=25ºC di / dt = 160A / μs VR = 400V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Datasheet SCT2280KE lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT2280KE 29.Mar.2021 - Rev.001 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001