SCT2750NYTB

SCT2750NY Datasheet N-channel SiC power MOSFET Outline VDSS 1700V RDS(on) (Typ.) 750m ID 6A PD 57W Features TO-268-2L (2) (1) (3) Inner circuit 1) Low on-resistance (2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Long creepage distance with no center lead *1 (1) 4) Simple to drive *1 Body Diode 5) Pb-free lead plating ; RoHS compliant (3) Packaging specifications Packing Application ・Auxilialy power supplies Type ・Switch mode power supplies Embossed tape Reel size (mm) 330 Tape width (mm) 24 Basic ordering unit (pcs) 400 Taping code TB Marking SCT2750NY Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Symbol Value Unit VDSS 1700 V Tc = 25°C ID *1 5.9 A Tc = 100°C ID *1 4 A 14 A 6 to 22 V 10 to 26 V Pulsed drain current ID,pulse *2 VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge