SCT2H12NYTB

SCT2H12NY Datasheet N-channel SiC power MOSFET Outline VDSS 1700V RDS(on) (Typ.) 1.15 ID 4A PD 44W Features (2) TO-268-2L (1) (3) Inner circuit (2) 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Long creepage distance with no center lead *1 (1) 4) Simple to drive *1 Body Diode 5) Pb-free lead plating ; RoHS compliant (3) Packaging specifications Packing Application ・Auxilialy power supplies Embossed tape Reel size (mm) 330 Tape width (mm) 24 Basic ordering unit (pcs) 400 Taping code TB Type ・Switch mode power supplies Marking SCT2H12NY Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Symbol Value Unit VDSS 1700 V Tc = 25°C ID *1 4 A Tc = 100°C ID *1 2.9 A ID,pulse *2 10 A VGSS 6 to 22 V 10 to 26 V Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge