SCT3022ALHRC11

SCT2080KEHR Datasheet Automotive Grade N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 80mΩ ID 40A lFeatures TO-247N lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel * Body Diode 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lPackaging specifications 7) Qualified to AEC-Q101 Package TO-247N lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Tube Type Basic ordering unit (pcs) Packing code 30 C11 Marking SCT2080KE lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 40 A Tc = 100°C ID *1 28 A 80 A -6 to +22 V -10 to +26 V 262 W 130 W Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse VGSS Gate - Source voltage (DC) Gate - Source surge voltage (ｔsurge ˂ 300nsec) Total power dissipation *3 VGSS_surge TC=25°C, See Fig.1 PD TC=100°C, See Fig.1 Junction temperature Range of storage temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 *2 1/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 μA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -6V, VDS = 0V - - -100 nA 1.6 2.8 4.0 V VGS (th) Gate threshold voltage VDS = VGS, ID = 4.4mA lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.44 0.57 °C/W lTypical Transient Thermal Characteristics Symbol Value Rth1 7.80E-02 Rth2 1.97E-01 Rth3 1.62E-01 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Unit K/W 2/12 Symbol Value Cth1 5.00E-03 Cth2 1.80E-02 Cth3 2.49E-01 Unit Ws/K TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 80 117 Tj = 125°C - 125 - f = 1MHz, open drain - 6.3 - Ω S VGS = 18V, ID = 10A Static drain - source on - state resistance Gate input resistance RDS(on) *4 Tj = 25°C RG Transconductance gfs *4 VDS = 10V, ID = 10A - 3.7 - Input capacitance Ciss VGS = 0V - 2080 - Output capacitance Coss VDS = 800V - 77 - Reverse transfer capacitance Crss f = 1MHz - 16 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 500V - 116 - Turn - on delay time td(on) *4 VDD = 400V, VGS = 18V - 35 - tr *4 ID = 10A - 36 - td(off) *4 RL = 40Ω - 76 - tf *4 RG = 0Ω - 22 - - 174 - Rise time Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss Eon *4 Eoff *4 VDD = 600V, ID=10A VGS = 18V/0V RG = 0Ω, L=500μH *Eon includes diode reverse recovery mΩ pF pF ns μJ - 51 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *4 VDD = 400V - 106 - Gate - Source charge Qgs *4 ID = 10A - 27 - Gate - Drain charge Qgd VGS = 18V - 31 - VDD = 400V, ID = 10A - 9.7 - Gate plateau voltage www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *4 V(plateau) 3/12 nC V TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Body diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 40 A - - 80 A - 4.6 - V - 31 - ns - 44 - nC - 2.3 - A Tc = 25°C Body diode direct current, pulsed ISM *2 Forward voltage VSD *4 Reverse recovery time trr *4 Reverse recovery charge Qrr *4 Peak reverse recovery current Irrm *4 VGS = 0V, IS = 10A IF = 10A, VR = 400V di/dt = 150A/μs *1 Limited only by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform *4 Pulsed www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 300 PW = 100us 250 Drain Current : ID [A] Power Dissipation : PD [W] PW = 1ms 200 150 100 10 Operation in this area is limited by RDS(ON) 1 PW = 10ms PW = 100ms 50 Ta = 25ºC Single Pulse 0.1 0 25 75 125 175 0.1 225 Junction Temperature : Tj [ºC] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : Rth [K/W] 1 Ta = 25ºC Single 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 40 VGS= 20V 35 VGS= 16V VGS= 18V VGS= 14V VGS= 14V 16 Drain Current : ID [A] 25 20 VGS= 12V 15 VGS= 10V 10 Ta = 25ºC Pulsed 5 VGS= 20V 18 30 Drain Current : ID [A] VGS= 18V VGS= 16V 20 VGS= 12V 14 12 10 8 6 VGS= 10V 4 Ta = 25ºC Pulsed 2 0 0 0 2 4 6 8 10 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.6 Typical Output Characteristics(I) Fig.7 Typical Output Characteristics(II) 40 20 VGS= 20V VGS= 18V Drain Current : ID [A] VGS= 12V VGS= 16V VGS= 14V 20 VGS= 18V 16 30 25 VGS= 20V 18 35 Drain Current : ID [A] 1 VGS = 10V 15 10 Ta = 150ºC Pulsed 5 VGS= 16V 14 VGS= 14V 12 VGS= 10V 10 VGS= 12V 8 6 4 Ta = 150ºC Pulsed 2 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.9 Typical Transfer Characteristics (II) Fig.8 Typical Transfer Characteristics 40 100 VDS = 10V Pulsed 30 Drain Current : ID [A] 10 Drain Current : ID [A] VDS = 10V Pulsed 35 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 25 20 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 15 10 5 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 2 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 5 10 VDS = 10V Pulsed VDS = 10V ID = 10mA 4.5 4 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 3.5 3 2.5 2 1.5 1 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.5 0 -50 0 50 100 0.01 0.01 150 Junction Temperature : Tj [ºC] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0.1 1 10 100 Drain Current : ID [A] 7/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] Ta = 25ºC 0.6 0.4 ID = 20A Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.15 0.8 VGS = 18V Pulsed ID = 20A 0.1 ID = 10A 0.05 0.2 ID = 10A 0 6 8 10 12 14 16 18 20 22 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Gate - Source Voltage : VGS [V] Static Drain - Source On-State Resistance : RDS(on) [Ω] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed 0.1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.16 Coss Stored Energy Fig.15 Typical Capacitance vs. Drain - Source Voltage 40 10000 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : EOSS [uJ] Ta = 25ºC Coss Crss 100 10 Ta = 25ºC f = 1MHz VGS = 0V 30 20 10 0 1 0.1 1 10 100 0 1000 400 600 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 20 10000 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0Ω Pulsed tf Switching Time : t [ns] 200 td(off) 100 tr 10 td(on) 1 Ta = 25ºC VDD = 400V ID = 10A Pulsed 15 10 5 0 0.01 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20 40 60 80 100 120 Total Gate Charge : Qg [nC] 9/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 1200 300 200 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0Ω L=500μH 1000 Switching Energy : E [μJ] Switching Energy : E [μJ] 1100 Ta = 25ºC ID=10A VGS = 18V/0V RG=0Ω L=500μH 250 Eon 150 100 50 Eoff 900 800 700 Eon 600 500 400 300 200 Eoff 100 0 0 0 200 400 600 800 1000 0 5 10 15 20 25 30 35 Drain - Current : ID [A] Drain - Source Voltage : VDS [V] Fig.21 Typical Switching Loss vs. External Gate Resistance 500 Ta = 25ºC VDD=600V ID=10A VGS = 18V/0V L=500μH 450 Switching Energy : E [μJ] 400 350 Eon 300 250 200 150 Eoff 100 50 0 0 5 10 15 20 25 30 External Gate Resistance : R G [Ω] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lElectrical characteristic curves Fig.22 Body Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Body Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Body Diode Forward Current : IS [A] 100 10 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0.1 0.01 Ta = 25ºC di / dt = 150A / μs VR = 400V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Body Diode Forward Current : IS [A] 11/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Datasheet SCT2080KEHR lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT2080KEHR 28.Mar.2019 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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