SCT3022KLGC11

SCT3022KL Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 22mΩ *1 TO-247N 95A ID PD 427W (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *Body Diode 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) - Tape width (mm) - ・DC/DC converters Tube Type ・Switch mode power supplies Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 30 C11 SCT3022KL lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 95 A Tc = 100°C ID *1 67 A 237 A -4 to +22 V -4 to +26 V Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) ID,pulse *2 VGSS Gate - Source voltage (DC) *3 Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage VGS_op*4 0 / +18 V Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. V(BR)DSS Tvj = 25°C 1200 - - Tvj = -55°C 1200 - - Tvj = 25°C - 1 10 Tvj = 150°C - 2 - VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.7 - 5.6 V - 22 28.6 mΩ Tvj = 150°C - 38 - f = 1MHz, open drain - 4 - , VDS = 0V VGS (th) VDS = 10V, ID = 18.2mA Gate threshold voltage VGS = 18V, ID = 36A Static Drain - Source on - state resistance RDS(on) *5 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.27 0.35 K/W lTypical Transient Thermal Characteristics Symbol Value Rth1 6.66E-03 Rth2 1.14E-01 Rth3 1.49E-01 Unit K/W Tj PD Value Cth1 1.23E-03 Cth2 1.73E-02 Cth3 4.86E-02 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 36A - 14.2 - Input capacitance Ciss VGS = 0V - 2879 - Output capacitance Coss VDS = 800V - 237 - Reverse transfer capacitance Crss f = 1MHz - 108 - Effective output capacitance, energy related Co(er) - 213 - Total Gate charge Qg *5 - 178 - - 26 - - 97 - - 29 - - 44 - VGS = 0V VDS = 0V to 600V VDS = 600V S pF pF ID = 36A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 400V nC ID = 18A Rise time Turn - off delay time tr *5 td(off) VGS = 0V/+18V *5 RG = 0Ω ns - 67 - - 28 - - 632 - RL = 22Ω Fall time tf *5 See Fig. 1-1, 1-2. VDS = 600V Turn - on switching loss Eon *5 VGS=0V/18V, ID = 36A RG = 0Ω, L = 250μH Turn - off switching loss www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff *5 Eon includes diode reverse recovery Lσ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. 3/15 μJ - 243 - TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Body diode continuous, forward current Conditions IS *1 Unit Min. Typ. Max. - - 95 A - - 237 A Tc = 25°C Body diode direct current, pulsed ISM Forward voltage VSD *5 VGS = 0V, IS = 36A - 3.2 - V IF = 36A - 28 - ns di/dt = 1100A/μs - 175 - nC Lσ = 50nH, Cσ = 200pF See Fig. 3-1, 3-2. - 12 - A Reverse recovery time *2 trr *5 VR = 600V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum Tvj and for Max. RthJC. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 450 Operation in this area is limited by R DS(on) PW = 100ns* 350 Drain Current : ID [A] Power Dissipation : PD [W] 400 300 250 200 150 100 100 PW = 1μs* 10 PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 Tc = 25ºC Single Pulse *Calculation(PW10μs) 50 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Impedance : ZthJC [K/W] 1 0.1 0.01 0.001 Tc = 25ºC Single Pulse 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 50 100 20V 90 18V 45 16V 70 12V 14V 60 50 40 30 10V 14V 18V 40 Drain Current : ID [A] Drain Current : ID [A] 80 20V Tvj = 25ºC Pulsed 16V Tvj = 25ºC Pulsed 35 12V 30 25 10V 20 15 10 20 VGS= 8V 10 VGS= 8V 5 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics 0 Tvj = 25ºC Pulsed -10 Drain Current : ID [A] -20 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -30 -40 -50 -60 -70 -80 -90 -100 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.7 Tvj = 150ºC Typical Output Characteristics(I) Fig.8 Tvj = 150ºC Typical Output Characteristics(II) 50 100 20V 80 18V 70 16V 20V 45 14V 10V 12V 60 Drain Current : ID [A] Drain Current : ID [A] 90 50 40 30 VGS= 8V 20 18V 35 16V 30 25 VGS= 8V 20 15 Tvj = 150ºC Pulsed 5 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.9 Tvj = 150ºC 3rd Quadrant Characteristics Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage 0 Body Diode Forward Voltage : VSD [V] 6 Tvj = 150ºC Pulsed -10 -20 Drain Current : ID [A] 10V 12V 10 Tvj = 150ºC Pulsed 10 40 14V VGS = -4V VGS = -2V VGS = 0V VGS = 18V -30 -40 -50 -60 -70 -80 -90 ID=36A 5 4 3 2 Tvj= 150ºC 1 Tvj= 25ºC 0 -100 -10 -8 -6 -4 -2 -4 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 100 90 VDS = 10V Pulsed 80 10 Tvj= Tvj= Tvj= Tvj= 1 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 150ºC 75ºC 25ºC -25ºC 0.1 70 60 50 40 Tvj= Tvj= Tvj= Tvj= 30 20 150ºC 75ºC 25ºC -25ºC 10 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 18.2mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 VDS = 10V Pulsed 1 Tvj = 150ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 0.1 0 -50 0 50 100 150 0.1 200 Junction Temperature : Tvj [ºC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.09 0.05 Tvj = 25ºC Pulsed 0.08 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] lElectrical characteristic curves 0.07 ID= 63A 0.06 0.05 ID= 36A 0.04 0.03 ID= -36A 0.02 VGS = 18V Pulsed 0.04 ID= 63A 0.03 ID= 36A 0.02 ID= -36A 0.01 0.01 0.00 0.00 8 10 12 14 16 18 20 -50 22 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Junction Temperature : Tvj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 1.04 0.1 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] Tvj = 150ºC Tvj = 125ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC VGS = 18V Pulsed 0.01 1.03 1.02 1.01 1.00 0.99 0.98 1 10 100 -50 Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Junction Temperature : Tvj [ºC] 9/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 10000 70 Tvj = 25ºC Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 Tvj = 25ºC f = 1MHz VGS = 0V 60 50 40 30 20 10 0 1 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Tvj = 25ºC VDD = 600V ID = 36A Pulsed 15 10 5 0 0 40 80 120 160 200 Total Gate Charge : Qg [nC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lElectrical characteristic curves Fig.19 Typical Switching Time 　　　　　vs. Drain Current Fig.20 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 10000 1400 td(on) td(off) 100 Switching Energy : E [µJ] tf 1000 Switching Time : t [ns] Tvj = 25°C VDD= 400V VGS= +18V/0V RG = 0Ω tr 10 1200 Tvj = ID = VGS= RG = 25°C 36A +18V/0V 0Ω 1000 L= 250μH Eon 800 600 400 Eoff 200 0 1 0.1 1 10 200 100 600 800 Fig.21 Typical Switching Loss 　　　　　vs. Drain Current Fig.22 Typical Switching Loss 　　　　　vs. External Gate Resistance 5600 5600 4800 Tvj = VDD= VGS= RG = 25°C 600V +18V/0V 0Ω 4000 L= 250μH 3200 Eon 2400 1600 800 1000 Drain - Source Voltage : VDS [V] Switching Energy : E [µJ] Switching Energy : E [µJ] Drain Current : ID [A] 400 4800 Tvj = 25°C ID = 36A VDD= 600V VGS= +18V/0V 4000 L= 250μH 3200 2400 Eon 1600 Eoff 800 Eoff 0 0 0 20 40 60 80 0 100 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lMeasurement circuits and waveforms Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss Eon = ‫ ׬‬ID ∙ VDS dt VDS Eoff = ‫ ׬‬ID ∙ VDS dt Vsurge Irr ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Fig.3-2 Reverse Recovery Waveform 12/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lPackage Dimensions Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Datasheet SCT3022KL lDie Bonding Layout : Die position ・Front view of the packaging. ・Dimensions are design values. ・If the heat sink is to be installed, it should be in contact with the die bonding point. Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/15 TSQ50211-SCT3022KL 13.Nov.2022 - Rev.006 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. 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The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001