SCT3030AR
N-channel SiC power MOSFET
Datasheet
lOutline
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
30mΩ
70A
262W
TO-247-4L
(1) (2)(3)(4)
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
lApplication
Packing
・Solar inverters
Reel size (mm)
-
Tape width (mm)
-
・DC/DC converters
Type
・Switch mode power supplies
Tube
Basic ordering unit (pcs)
・Induction heating
Taping code
・Motor drives
Marking
30
C14
SCT3030AR
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Value
Unit
VDSS
650
V
Tc = 25°C
ID
*1
70
A
Tc = 100°C
ID *1
49
A
ID,pulse *2
175
A
VGSS
-4 to +22
V
VGSS_surge*3
-4 to +26
V
VGS_op*4
0 / +18
V
Tj
175
°C
Tstg
-55 to +175
°C
Pulsed Drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
Recommended drive voltage
Junction temperature
Range of storage temperature
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Symbol
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TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
SCT3030AR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Drain - Source breakdown
voltage
Values
Conditions
Min.
Typ.
Max.
V(BR)DSS Tj = 25°C
650
-
-
Tj = -55°C
650
-
-
Tj = 25°C
-
1
10
Tj = 150°C
-
2
-
Unit
VGS = 0V, ID = 1mA
V
VGS = 0V, VDS =650V
Zero Gate voltage
Drain current
IDSS
Gate - Source
leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source
leakage current
IGSS-
VGS = -4V,
-
-
-100
nA
2.7
-
5.6
V
-
30
39
mΩ
Tj = 150°C
-
43
-
f = 1MHz, open drain
-
7
-
VDS = 0V
VGS (th) VDS = 10V, ID = 13.3mA
Gate threshold voltage
μA
VGS = 18V, ID = 27A
Static Drain - Source
on - state resistance
RDS(on) *5 Tj = 25°C
RG
Gate input resistance
Ω
lThermal resistance
Parameter
Symbol
RthJC
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
-
0.44
0.57
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
2.56×10
-2
Rth2
1.95×10
-1
Rth3
2.20×10
-1
K/W
Tj
PD
Symbol
Cth2
Unit
Cth1
1.39×10
-3
Cth2
1.00×10
-2
Cth3
3.57×10
-2
Rth,n
Rth1
Cth1
Value
Ws/K
Tc
Cth,n
Ta
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TSZ22111・15・001
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TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
SCT3030AR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *5
VDS = 10V, ID = 27A
-
9.4
-
Input capacitance
Ciss
VGS = 0V
-
1526
-
Output capacitance
Coss
VDS = 500V
-
89
-
Reverse transfer capacitance
Crss
f = 1MHz
-
42
-
Effective output capacitance,
energy related
Co(er)
-
230
-
Total Gate charge
Qg *5
VDS = 300V
-
104
-
Gate - Source charge
Qgs *5
VGS = 18V
-
19
-
Gate - Drain charge
Qgd *5
-
55
-
Turn - on delay time
td(on) *5
-
7
-
VGS = 0V/+18V
-
22
-
RG = 0Ω, L = 750μH
-
27
-
See Fig. 2-1, 2-2, 2-3.
-
21
-
Eon includes diode
reverse recovery.
-
159
-
Rise time
Turn - off delay time
Fall time
tr
*5
td(off)
*5
tf *5
Turn - on switching loss
Eon *5
Turn - off switching loss
*5
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TSZ22111・15・001
Eoff
VGS = 0V
VDS = 0V to 300V
ID = 27A
See Fig. 1-1.
VDS = 400V
ID = 27A
Lσ = 50nH, Cσ = 10pF
S
pF
pF
nC
ns
μJ
-
3/12
Unit
87
-
TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
SCT3030AR
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Body diode continuous,
forward current
Symbol
IS *1
Body diode direct current,
pulsed
ISM
Forward voltage
VSD *5
*2
Conditions
Tc = 25°C
VGS = 0V, ID = 27A
IF = 27A
Values
Unit
Min.
Typ.
Max.
-
-
70
A
-
-
175
A
-
3.2
-
V
-
28
-
ns
Reverse recovery time
trr *5
Reverse recovery charge
Qrr *5
di/dt = 2500A/μs
-
702
-
nC
Peak reverse recovery current
Irrm *5
Lσ = 50nH, Cσ = 10pF
See Fig. 3-1, 3-2.
-
40
-
A
VR = 400V
*1 Limited by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
Please note especially when using driver source that V GSS_surge must be in the range of
absolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with V GS below 13V as doing so may cause
thermal runaway.
*5 Pulsed
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TSQ50254-SCT3030AR
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SCT3030AR
Datasheet
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
1000
Operation in this area is limited by RDS(on)
250
Drain Current : ID [A]
Power Dissipation : PD [W]
300
200
150
100
100
25
75
125
0.1
175
Case Temperature : TC [°C]
PW = 10μs*
PW = 100μs
PW = 1ms
PW = 10ms
1
50
0
PW = 1μs*
10
Ta = 25ºC
Single Pulse
*Calculation(PW10μs)
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance :
ZthJC [K/W]
1
0.1
0.01
0.001
Ta = 25ºC
Single Pulse
0.0001
0.000001
0.0001
0.01
1
100
Pulse Width : PW [s]
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TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
SCT3030AR
Datasheet
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
35
70
20V
50
Ta = 25ºC
Pulsed
18V
14V
16V
12V
40
30
20
10V
10
0
2
4
6
8
25
14V
18V
16V
Ta = 25ºC
Pulsed
12V
20
15
10V
10
VGS= 8V
5
VGS= 8V
0
20V
30
Drain Current : ID [A]
Drain Current : ID [A]
60
0
10
Drain - Source Voltage : VDS [V]
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 25ºC 3rd Quadrant Characteristics
0
Ta = 25ºC
Pulsed
Drain Current : ID [A]
-10
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-20
-30
-40
-50
-60
-70
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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SCT3030AR
Datasheet
lElectrical characteristic curves
Fig.7 Tj = 150ºC Typical Output
Characteristics(I)
70
20V
14V
18V
16V
50
12V
10V
40
30
20
VGS= 8V
10
0
2
4
6
8
16V
25
15
VGS= 8V
Ta = 150ºC
Pulsed
0
-40
-50
-60
-70
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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TSZ22111・15・001
2
3
4
5
Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
Body Diode Forward Voltage : VSD [V]
Drain Current : ID [A]
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-30
1
Drain - Source Voltage : VDS [V]
Ta = 150ºC
Pulsed
-20
10V
10
0
10
Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
-10
12V
20
Drain - Source Voltage : VDS [V]
0
14V
5
Ta = 150ºC
Pulsed
0
20V
18V
30
Drain Current : ID [A]
Drain Current : ID [A]
60
Fig.8 Tj = 150ºC Typical Output
Characteristics(II)
35
6
ID=27A
5
4
3
2
Ta= 150ºC
1
0
Ta= 25ºC
-4
0
4
8
12
16
20
Gate - Source Voltage : VGS [V]
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Datasheet
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
Fig.12 Typical Transfer Characteristics (II)
70
100
VDS = 10V
Pulsed
60
10
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V
Pulsed
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
1
0.1
50
40
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
30
20
10
0.01
0
2
4
6
0
8 10 12 14 16 18 20
0
Gate - Source Voltage : VGS [V]
6
8 10 12 14 16 18 20
Fig.14 Transconductance vs. Drain Current
6
10
VDS = 10V
ID = 13.3mA
5
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
4
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
4
3
2
1
0
2
-50
0
50
100
150
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
200
Junction Temperature : Tj [ºC]
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TSZ22111・15・001
VDS = 10V
Pulsed
0.1
1
10
Drain Current : ID [A]
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TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
SCT3030AR
Datasheet
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.06
Ta = 25ºC
Pulsed
0.10
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
0.12
ID= 47A
0.08
0.06
ID= 27A
0.04
ID= -27A
0.02
0.00
8
10
12
14
16
18
20
0.04
ID= 27A
ID= -27A
0.02
0.01
-50
Gate - Source Voltage : VGS [V]
Normalized Drain - Source
Breakdown Voltage
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
150
200
1.03
1.02
1.01
1.00
0.99
0.98
100
Drain Current : ID [A]
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50
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Junction Temperature
1.04
0.1
0.01
0
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
VGS = 18V
Pulsed
ID= 47A
0.03
0.00
22
VGS = 18V
Pulsed
0.05
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
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Datasheet
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
Fig.20 Coss Stored Energy
10000
20
Coss Stored Energy : EOSS [µJ]
Capacitance : C [pF]
Ciss
1000
Coss
100
Crss
10
1
Ta = 25ºC
f = 1MHz
VGS = 0V
0.1
1
10
100
Ta = 25ºC
15
10
5
0
1000
Drain - Source Voltage : VDS [V]
0
100
200
300
400
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
*Gate Charge Waveform
Gate - Source Voltage : VGS [V]
20
Ta = 25ºC
VDD = 300V
ID = 27A
Pulsed
15
10
5
0
0
20
40
60
80
100
120
Total Gate Charge : Qg [nC]
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Datasheet
lElectrical characteristic curves
Fig.22 Typical Switching Time
vs. External Gate Resistance
Fig.23 Typical Switching Loss
vs. Drain - Source Voltage
160
400
Switching Time : t [ns]
120
100
25°C
400V
+18V/0V
27A
750μH
tr
tf
td(off)
80
60
40
20
0
10
300
250
200
Eon
150
100
Eoff
20
0
30
100
External Gate Resistance : RG [Ω]
200
300
400
Fig.24 Typical Switching Loss
vs. Drain Current
Fig.25 Typical Switching Loss
vs. External Gate Resistance
1200
1200
Ta =
VDD=
VGS=
RG =
L=
1000
800
25°C
400V
+18V/0V
0Ω
750μH
600
Eoff
400
Eon
200
0
0
Drain Current : ID [A]
Ta =
ID =
VDD=
VGS=
L=
1000
800
25°C
27A
400V
+18V/0V
750μH
Eon
600
Eoff
400
200
0
10 20 30 40 50 60 70 80
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TSZ22111・15・001
500
Drain - Source Voltage : VDS [V]
Switching Energy : E [µJ]
Switching Energy : E [µJ]
25°C
27A
+18V/0V
0Ω
750μH
50
td(on)
0
Ta =
ID =
VGS=
RG =
L=
350
Switching Energy : E [µJ]
Ta =
VDD=
VGS=
ID =
L=
140
0
5
10
15
20
25
30
External Gate Resistance : RG [Ω]
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TSQ50254-SCT3030AR
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SCT3030AR
Datasheet
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.2-1 Switching Characteristics Measurement Circuit
Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss
Eon = ID ∙ VDS dt
VDS
Irr
Eoff =
ID ∙ VDS dt
Vsurge
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
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Fig.3-2 Reverse Recovery Waveform
TSQ50254-SCT3030AR
31.Jul.2019 - Rev.001
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1107 S
