SCT3030KLGC11

SCT3030KL Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 30mW ID 72A PD 339W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters 30 C11 Marking SCT3030KL ・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 72 A Tc = 100°C ID *1 51 A ID,pulse *2 180 A VGSS -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Pulsed drain current Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge Recommended Drive Voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.34 0.44 C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA 2.7 - 5.6 V - 30 39 mW Tj = 125°C - 45 - f = 1MHz, open drain - 5 - Gate threshold voltage VGS (th) VDS = 10V, ID = 13.3mA VGS = 18V, ID = 27A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 RDS(on) *5 Tj = 25°C RG 2/12 W TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 27A - 10.8 - Input capacitance Ciss VGS = 0V - 2222 - Output capacitance Coss VDS = 800V - 180 - Reverse transfer capacitance Crss f = 1MHz - 72 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 157 - Turn - on delay time td(on) *5 VDD = 400V, ID = 18A - 24 - VGS = 18V/0V - 42 - td(off) *5 RL = 22W - 61 - tf *5 RG = 0W - 29 - - 468 - Rise time tr Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss *5 Eon *5 Eoff *5 S pF pF ns VDD = 600V, ID=27A VGS = 18V/0V RG = 0W L=250mH *Eon includes diode reverse recovery mJ - 204 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD = 600V - 131 - Gate - Source charge Qgs *5 ID = 27A - 30 - Gate - Drain charge Qgd VGS = 18V - 55 - VDD = 600V, ID = 27A - 9.6 - Gate plateau voltage www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *5 V(plateau) 3/12 nC V TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 72 A - - 180 A - 3.2 - V - 27 - ns - 135 - nC - 10 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm VGS = 0V, IS = 27A IF = 27A, VR = 600V di/dt = 1100A/ms *5 *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 400 1000 Operation in this area is limited by RDS(ON) PW = 100µs 300 Drain Current : ID [A] Power Dissipation : PD [W] 350 250 200 150 100 100 PW = 1ms 10 PW = 10ms 1 PW = 100ms 50 Ta = 25ºC Single Pulse 0.1 0 0 50 100 150 0.1 200 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 35 70 20V 18V 16V 50 30 12V 14V Drain Current : ID [A] Drain Current : ID [A] 60 20V Ta = 25ºC Pulsed 40 30 10V 20 10 18V 16V 25 12V 20 10V 15 10 VGS= 8V 5 VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 35 70 30 18V 60 14V 16V Drain Current : ID [A] 12V 40 30 VGS= 8V 20 10 10V 16V 10V 50 14V 12V 20V 18V 20V Drain Current : ID [A] Ta = 25ºC Pulsed 14V 25 20 15 VGS= 8V 10 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 70 100 VDS = 10V Pulsed 60 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 50 40 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 30 20 10 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 13.3mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.12 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Ta = 25ºC Pulsed 0.11 0.1 0.09 0.08 0.07 0.06 ID = 48A 0.05 0.04 ID = 27A 0.03 0.02 0.01 0 6 8 10 12 14 16 18 20 22 Gate - Source Voltage : VGS [V] 0.12 0.11 0.1 VGS = 18V Pulsed 0.09 0.08 0.07 0.06 0.05 ID = 48A 0.04 0.03 ID = 27A 0.02 0.01 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 50 10000 Coss Stored Energy : EOSS [mJ] Capacitance : C [pF] 1000 Coss 100 Ta = 25ºC 45 Ciss Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 40 35 30 25 20 15 10 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 600 800 Fig.18 Dynamic Input Characteristics 10000 20 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 400V VGS = 18V RG = 0W Pulsed tf Switching Time : t [ns] 400 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics 100 200 td(off) tr td(on) 10 1 Ta = 25ºC VDD = 600V ID = 27A Pulsed 15 10 5 0 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20 40 60 80 100 120 140 Total Gate Charge : Qg [nC] 9/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 1000 4000 Ta = 25ºC ID=27A VGS = 18V/0V RG=0W L=250mH 800 700 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=250mH 3600 Switching Energy : E [mJ] Switching Energy : E [mJ] 900 Eon 600 500 400 Eoff 300 200 3200 2800 2400 2000 Eon 1600 1200 800 Eoff 400 100 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 70 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 4000 Switching Energy : E [mJ] 3600 Ta = 25ºC VDD=600V ID=27A VGS = 18V/0V L=250mH 3200 2800 2400 2000 Eon 1600 1200 Eoff 800 400 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 1000 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 VGS = 0V Pulsed 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed 100 10 0.01 0 1 2 3 4 5 6 7 1 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Datasheet SCT3030KL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT3030KL 14.Jun.2018 - Rev.005 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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