SCT3040KLGC11

SCT3040KL Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 40mW ID 55A PD 262W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel 5) Simple to drive lPackaging specifications 6) Pb-free lead plating ; RoHS compliant Packing lApplication Tube Reel size (mm) - Tape width (mm) - Type • Solar inverters Basic ordering unit (pcs) • DC/DC converters Taping code • Switch mode power supplies Marking 30 C11 SCT3040KL • Induction heating • Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 55 A Tc = 100°C ID *1 39 A 137 A VGSS -4 to +22 V VGSS_surge*3 -4 to +26 V VGS_op*4 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 *2 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.44 0.57 °C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA VGS (th) VDS = 10V, ID = 10mA 2.7 - 5.6 V - 40 52 mW Tj = 125°C - 60 - f = 1MHz, open drain - 7 - Gate threshold voltage VGS = 18V, ID = 20A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 RDS(on) *5 Tj = 25°C RG 2/12 W TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 20A - 8.3 - Input capacitance Ciss VGS = 0V - 1337 - Output capacitance Coss VDS = 800V - 76 - Reverse transfer capacitance Crss f = 1MHz - 27 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 122 - Turn - on delay time td(on) *5 VDD = 400V, ID = 18A - 21 - VGS = 18V/0V - 39 - td(off) *5 RL = 22W - 49 - tf *5 RG = 0W - 24 - - 283 - Rise time tr Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss *5 Eon *5 Eoff *5 S pF pF ns VDD = 600V, ID=20A VGS = 18V/0V RG = 0W L=250mH *Eon includes diode reverse recovery mJ - 118 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD = 600V - 107 - Gate - Source charge Qgs *5 ID = 20A - 22 - Gate - Drain charge Qgd VGS = 18V - 41 - VDD = 600V, ID = 20A - 9.6 - Gate plateau voltage www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *5 V(plateau) 3/12 nC V TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 55 A - - 137 A - 3.2 - V - 25 - ns - 115 - nC - 9 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm VGS = 0V, IS = 20A IF = 20A, VR = 600V di/dt = 1100A/ms *5 *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 300 250 Drain Current : ID [A] Power Dissipation : PD [W] Operation in this area is limited by RDS(on) 200 150 100 PW = 100ms 100 10 PW = 1ms PW = 10ms 1 50 Ta = 25ºC Single Pulse 0 PW = 100ms 0.1 0 50 100 150 200 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 25 50 20V 18V 16V Drain Current : ID [A] Drain Current : ID [A] 40 20V 12V 14V Ta = 25ºC Pulsed 30 20 10V 10 18V 16V 20 14V 15 12V 10V 10 Ta = 25ºC Pulsed 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150°C Typical Output Characteristics(I) Fig.7 Tj = 150°C Typical Output Characteristics(II) 25 50 16V 14V 12V 18V 40 20V Drain Current : ID [A] 20V Drain Current : ID [A] 1 10V 30 20 VGS= 8V 10V 20 12V 15 14V 16V 18V VGS= 8V 10 5 10 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 50 100 VDS = 10V Pulsed VDS = 10V Pulsed Drain Current : ID [A] Drain Current : ID [A] 40 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 30 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 20 10 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature Fig.11 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 10mA 5 Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 2 4 3 2 VDS = 10V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 1 0 -50 0.1 0 50 100 150 200 0.1 Junction Temperature : Tj [°C] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves 0.16 Ta = 25ºC Pulsed 0.14 0.12 0.1 0.08 ID = 37A 0.06 ID = 20A 0.04 0.02 0 6 8 10 12 14 16 18 20 Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 22 Gate - Source Voltage : VGS [V] 0.16 0.14 VGS = 18V Pulsed 0.12 0.1 0.08 0.06 ID = 37A 0.04 ID = 20A 0.02 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10000 Coss Stored Energy : EOSS [mJ] 40 Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 Ta = 25ºC 30 20 10 0 0.1 1 10 100 1000 0 400 600 Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta = 25ºC VDD = 400V VGS = 18V RG = 0W Pulsed tf 1000 100 td(off) tr td(on) 10 800 Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V] Switching Time : t [ns] Drain - Source Voltage : VDS [V] 200 15 Ta = 25ºC VDD = 600V ID = 20A Pulsed 10 5 0 1 0.1 1 10 0 10 20 30 40 50 60 70 80 90 100110 100 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 500 1800 Ta = 25ºC ID=20A VGS = 18V/0V RG=0W L=250mH 400 350 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0W L=250mH 1600 Switching Energy : E [mJ] Switching Energy : E [mJ] 450 Eon 300 250 200 150 Eoff 100 1400 1200 Eon 1000 800 600 400 Eoff 200 50 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 10 20 30 40 50 60 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 1800 Ta = 25ºC VDD=600V ID=20A VGS = 18V/0V L=250mH Switching Energy : E [mJ] 1600 1400 1200 1000 Eon 800 Eoff 600 400 200 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lElectrical characteristic curves Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 100 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Datasheet SCT3040KL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT3040KL 14.Jun.2018 - Rev.005 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. R1102S