SCT3040KLHRC11

SCT3040KLHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline VDSS RDS(on) (Typ.) ID*1 PD 1200V 40mΩ 55A 262W TO-247N (1) (2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Qualified to AEC-Q101 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Type Tube Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3040KL lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 55 A Tc = 100°C ID *1 39 A ID,pulse *2 137 A -4 to +22 V -4 to +26 V VGS_op*4 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Drain - Source Voltage Continuous Drain current Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 *3 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Drain - Source breakdown voltage Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 1200 - - Tj = -55°C 1200 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.7 - 5.6 V - 40 52 mΩ Tj = 150°C - 68 - f = 1MHz, open drain - 7 - , VDS = 0V VGS (th) VDS = 10V, ID = 10mA Gate threshold voltage μA VGS = 18V, ID = 20A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.44 0.57 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Rth1 2.56E-02 Rth2 1.95E-01 Rth3 2.20E-01 Unit K/W Tj PD Value Cth1 1.39E-03 Cth2 1.00E-02 Cth3 3.57E-02 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 20A - 8.3 - Input capacitance Ciss VGS = 0V - 1337 - Output capacitance Coss VDS = 800V - 76 - Reverse transfer capacitance Crss f = 1MHz - 27 - Effective output capacitance, energy related Co(er) - 122 - Total Gate charge Qg *5 - 107 - - 17 - - 56 - - 21 - VGS = 0V/+18V - 39 - RG = 0Ω - 49 - - 24 - - 283 - *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 Rise time Turn - off delay time Fall time tr *5 td(off) *5 tf *5 VGS = 0V VDS = 0V to 600V VDS = 600V ID = 20A VGS = 18V See Fig. 1-1. VDS = 400V ID = 18A RL = 22Ω See Fig. 1-1, 1-2. Unit S pF pF nC ns VDS = 600V Turn - on switching loss Eon *5 VGS=0V/18V, ID = 20A RG = 0Ω, L = 250μH Turn - off switching loss www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff *5 Eon includes diode reverse recovery Lσ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. 3/12 μJ - 118 - TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 Conditions Values Unit Min. Typ. Max. - - 55 A - - 137 A - 3.2 - V - 25 - ns di/dt = 1100A/μs - 115 - nC Lσ = 50nH, Cσ = 200pF See Fig. 3-1, 3-2. - 9 - A Tc = 25°C VGS = 0V, ID = 20A IF = 20A VR = 600V *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 Operation in this area is limited by RDS(on) 250 Drain Current : ID [A] Power Dissipation : PD [W] 300 200 150 100 100 25 75 125 0.1 175 Case Temperature : TC [°C] PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 50 0 PW = 1μs* 10 Ta = 25ºC Single Pulse *Calculation(PW10μs) 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : RthJC [K/W] 1 0.1 0.01 0.001 Ta = 25ºC Single Pulse 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) 40 Drain Current : ID [A] 25 20V 18V 16V 20V 14V Ta = 25ºC Pulsed 30 20 10V 10 0 20 12V Drain Current : ID [A] 50 Fig.5 Typical Output Characteristics(II) VGS= 8V 0 2 4 6 8 16V Drain - Source Voltage : VDS [V] 14V 15 12V 10V 10 Ta = 25ºC Pulsed 5 0 10 18V VGS= 8V 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics 0 Ta = 25ºC Pulsed Drain Current : ID [A] -10 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -40 -50 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.7 Tj = 150ºC Typical Output Characteristics(I) 50 40 Drain Current : ID [A] 16V 14V 12V 18V 20V 10V Drain Current : ID [A] 20V Fig.8 Tj = 150ºC Typical Output Characteristics(II) 25 30 20 VGS= 8V 10 0 2 4 6 8 20 12V 15 14V 16V 18V VGS= 8V 10 5 Ta = 150ºC Pulsed 0 0 10 Ta = 150ºC Pulsed 0 Drain - Source Voltage : VDS [V] Drain Current : ID [A] VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -40 -50 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 3 4 5 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage Body Diode Forward Voltage : VSD [V] Ta = 150ºC Pulsed -10 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics 0 10V 6 ID=20A 5 4 3 2 Ta= 150ºC 1 0 Ta= 25ºC -4 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) 50 100 VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 0.01 VDS = 10V Pulsed 40 10 Drain Current : ID [A] Drain Current : ID [A] Fig.12 Typical Transfer Characteristics (II) 30 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 20 10 0 2 4 6 0 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.14 Transconductance vs. Drain Current 6 10 VDS = 10V ID = 10mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 2 -50 0 50 100 150 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS = 10V Pulsed 0.1 1 10 Drain Current : ID [A] 8/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage 0.16 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] Ta = 25ºC Pulsed ID= 37A 0.14 0.12 0.10 0.08 ID= 20A 0.06 0.04 ID= -20A 0.02 0.00 8 10 12 14 16 18 20 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.10 VGS = 18V Pulsed 0.08 ID= 37A 0.06 ID= 20A 0.04 ID= -20A 0.02 0.00 22 -50 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 0.1 Static Drain - Source On-State Resistance : RDS(on) [Ω] 1.04 Normalized Drain - Source Breakdown Voltage 1.03 1.02 1.01 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.01 1.00 0.99 VGS = 18V Pulsed 1 10 0.98 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 40 10000 Ta = 25ºC Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ciss 1000 Coss 100 Crss 10 1 Ta = 25ºC f = 1MHz VGS = 0V 0.1 1 10 100 30 20 10 0 1000 Drain - Source Voltage : VDS [V] 0 200 400 600 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 600V ID = 20A Pulsed 15 10 5 0 0 20 40 60 80 100 120 Total Gate Charge : Qg [nC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lElectrical characteristic curves Switching Time : t [ns] 1000 Ta = VDD= VGS= RG = tf 100 Fig.20 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 500 25°C 400V +18V/0V 0Ω td(off) tr td(on) 10 Ta = ID = VGS= RG = L= 450 Switching Energy : E [µJ] Fig.19 Typical Switching Time 　　　　　vs. Drain Current 10000 400 350 25°C 20A +18V/0V 0Ω 250μH Eon 300 250 200 150 Eoff 100 50 1 0.1 1 10 0 100 200 Drain Current : ID [A] 600 800 Fig.22 Typical Switching Loss 　　　　　vs. External Gate Resistance 1800 1800 1400 1200 25°C 600V +18V/0V 0Ω 250μH 1000 Eon 800 600 400 Eoff 200 0 0 10 20 30 40 50 1400 1200 25°C 20A 600V +18V/0V 250μH 1000 800 Eon 600 Eoff 400 200 0 60 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Ta = ID = VDD= VGS= L= 1600 Switching Energy : E [µJ] Ta = VDD= VGS= RG = L= 1000 Drain - Source Voltage : VDS [V] Fig.21 Typical Switching Loss 　　　　　vs. Drain Current 1600 Switching Energy : E [µJ] 400 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] 11/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 SCT3040KLHR Datasheet lMeasurement circuits and waveforms Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Eoff = ID ∙ VDS dt Vsurge Irr ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Fig.3-2 Reverse Recovery Waveform 12/12 TSQ50211-SCT3040KLHR 16.Nov.2018 - Rev.003 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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