SCT3060ALHR
Automotive Grade N-channel SiC power MOSFET
Datasheet
lOutline
VDSS
RDS(on) (Typ.)
ID*1
PD
650V
60mΩ
39A
165W
TO-247N
(1) (2)(3)
lInner circuit
lFeatures
(1) Gate
(2) Drain
(3) Source
1) Qualified to AEC-Q101
2) Low on-resistance
*Body Diode
3) Fast switching speed
4) Fast reverse recovery
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
5) Easy to parallel
6) Simple to drive
7) Pb-free lead plating ; RoHS compliant
lPackaging specifications
lApplication
Packing
・Automobile
Reel size (mm)
-
Tape width (mm)
-
・Switch mode power supplies
Type
Tube
Basic ordering unit (pcs)
30
Taping code
C11
Marking
SCT3060AL
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
650
V
Tc = 25°C
ID *1
39
A
Tc = 100°C
ID *1
27
A
ID,pulse *2
97
A
-4 to +22
V
-4 to +26
V
VGS_op*4
0 / +18
V
Tj
175
°C
Tstg
-55 to +175
°C
Drain - Source Voltage
Continuous Drain current
Pulsed Drain current
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300nsec)
VGSS_surge
Recommended drive voltage
Junction temperature
Range of storage temperature
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SCT3060ALHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Drain - Source breakdown
voltage
Values
Conditions
Min.
Typ.
Max.
V(BR)DSS Tj = 25°C
650
-
-
Tj = -55°C
650
-
-
Tj = 25°C
-
1
10
Tj = 150°C
-
2
-
Unit
VGS = 0V, ID = 1mA
V
VGS = 0V, VDS =650V
Zero Gate voltage
Drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V , VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -4V
-
-
-100
nA
2.7
-
5.6
V
-
60
78
mΩ
Tj = 150°C
-
86
-
f = 1MHz, open drain
-
12
-
, VDS = 0V
VGS (th) VDS = 10V, ID = 6.67mA
Gate threshold voltage
μA
VGS = 18V, ID = 13A
Static Drain - Source
on - state resistance
RDS(on) *5 Tj = 25°C
RG
Gate input resistance
Ω
lThermal resistance
Parameter
Symbol
RthJC
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
-
0.70
0.91
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
9.00E-02
Rth2
5.96E-01
Rth3
1.47E-02
Unit
K/W
Tj
PD
Value
Cth1
1.23E-03
Cth2
7.32E-03
Cth3
1.64E-01
Rth,n
Rth1
Cth1
Symbol
Cth2
Unit
Ws/K
Tc
Cth,n
Ta
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TSQ50211-SCT3060ALHR
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SCT3060ALHR
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *5
VDS = 10V, ID = 13A
-
4.9
-
Input capacitance
Ciss
VGS = 0V
-
852
-
Output capacitance
Coss
VDS = 500V
-
55
-
Reverse transfer capacitance
Crss
f = 1MHz
-
24
-
Effective output capacitance,
energy related
Co(er)
-
126
-
Total Gate charge
Qg *5
-
58
-
-
11
-
-
31
-
-
19
-
VGS = 0V/+18V
-
37
-
RG = 0Ω
-
34
-
-
21
-
-
70
-
*5
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *5
Turn - on delay time
td(on) *5
Rise time
Turn - off delay time
Fall time
tr
*5
td(off)
*5
tf *5
VGS = 0V
VDS = 0V to 300V
VDS = 300V
ID = 13A
VGS = 18V
See Fig. 1-1.
VDS = 300V
ID = 13A
RL = 23Ω
See Fig. 1-1, 1-2.
Unit
S
pF
pF
nC
ns
VDS = 300V
Turn - on switching loss
Eon *5
VGS=0V/18V, ID = 13A
RG = 0Ω, L = 500μH
Turn - off switching loss
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TSZ22111・15・001
Eoff *5
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 200pF
See Fig. 2-1, 2-2.
3/12
μJ
-
10
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TSQ50211-SCT3060ALHR
16.Nov.2018 - Rev.002
SCT3060ALHR
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Body diode continuous,
forward current
IS *1
Body diode direct current,
pulsed
ISM *2
Forward voltage
VSD *5
Reverse recovery time
trr *5
*5
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *5
Conditions
Values
Unit
Min.
Typ.
Max.
-
-
39
A
-
-
97
A
-
3.2
-
V
-
15
-
ns
di/dt = 1100A/μs
-
55
-
nC
Lσ = 50nH, Cσ = 200pF
See Fig. 3-1, 3-2.
-
8
-
A
Tc = 25°C
VGS = 0V, ID = 13A
IF = 13A
VR = 300V
*1 Limited by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.
*5 Pulsed
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Datasheet
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
1000
180
140
Drain Current : ID [A]
Power Dissipation : PD [W]
160
120
100
80
60
40
100
25
75
125
Case Temperature : TC [°C]
PW = 10μs*
PW = 100μs
PW = 1ms
PW = 10ms
1
0.1
175
PW = 1μs*
10
20
0
Operation in this area is limited by RDS(on)
Ta = 25ºC
Single Pulse
*Calculation(PW10μs)
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance :
RthJC [K/W]
1
0.1
0.01
0.001
Ta = 25ºC
Single Pulse
0.0001
1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1
Pulse Width : PW [s]
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SCT3060ALHR
Datasheet
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
40
20
20V
20V
18V
30
14V
16V
Drain Current : ID [A]
Drain Current : ID [A]
Fig.5 Typical Output Characteristics(II)
Ta = 25ºC
Pulsed
20
12V
10
10V
18V
15
14V
16V
12V
10
10V
5
VGS= 8V
VGS= 8V
0
0
2
4
6
8
Ta = 25ºC
Pulsed
0
10
Drain - Source Voltage : VDS [V]
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 25ºC 3rd Quadrant Characteristics
Drain Current : ID [A]
0
Ta = 25ºC
Pulsed
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-10
-20
-30
-40
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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SCT3060ALHR
Datasheet
lElectrical characteristic curves
Fig.7 Tj = 150ºC Typical Output
Characteristics(I)
40
20V
16V
Drain Current : ID [A]
Drain Current : ID [A]
20V
18V
14V
18V
30
Fig.8 Tj = 150ºC Typical Output
Characteristics(II)
20
Ta = 150ºC
12V
10V
20
10
0
VGS= 8V
0
2
4
6
8
15
VGS= 8V
Ta = 150ºC
Pulsed
0
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-30
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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TSZ22111・15・001
2
3
4
5
Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
Body Diode Forward Voltage : VSD [V]
Drain Current : ID [A]
Ta = 150ºC
Pulsed
-20
-40
1
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
-10
10V
5
Drain - Source Voltage : VDS [V]
0
12V
10
0
10
14V
16V
6
ID=13A
5
4
3
2
Ta= 150ºC
1
0
Ta= 25ºC
-4
0
4
8
12
16
20
Gate - Source Voltage : VGS [V]
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SCT3060ALHR
Datasheet
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
Fig.12 Typical Transfer Characteristics (II)
40
100
VDS = 10V
Pulsed
10
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V
Pulsed
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
1
0.1
0.01
0
2
4
6
30
20
10
0
8 10 12 14 16 18 20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0
Gate - Source Voltage : VGS [V]
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
10
4
3
2
1
0
-50
0
50
100
150
8 10 12 14 16 18 20
VDS = 10V
Pulsed
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
200
Junction Temperature : Tj [ºC]
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Fig.14 Transconductance vs. Drain Current
VDS = 10V
ID = 6.67mA
5
4
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
6
2
0.1
1
10
Drain Current : ID [A]
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SCT3060ALHR
Datasheet
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.12
0.20
ID= 26A
Ta = 25ºC
Pulsed
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
0.24
0.16
0.12
ID= 13A
0.08
ID= -13A
0.04
0.00
8
10
12
14
16
18
20
VGS = 18V
Pulsed
ID= 26A
0.08
ID= -13A
0.04
0.00
22
ID= 13A
-50
Gate - Source Voltage : VGS [V]
100
150
200
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Junction Temperature
1
1.04
Normalized Drain - Source
Breakdown Voltage
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
50
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
0.1
0.01
0
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
VGS = 18V
Pulsed
1
10
1.02
1.01
1.00
0.99
0.98
100
Drain Current : ID [A]
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1.03
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
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Datasheet
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
Fig.20 Coss Stored Energy
10000
10
Coss Stored Energy : EOSS [µJ]
Capacitance : C [pF]
Ta = 25ºC
Ciss
1000
Coss
100
Crss
10
1
Ta = 25ºC
f = 1MHz
VGS = 0V
0.1
1
10
100
5
0
1000
Drain - Source Voltage : VDS [V]
0
100
200
300
400
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
*Gate Charge Waveform
Gate - Source Voltage : VGS [V]
20
Ta = 25ºC
VDD = 300V
ID = 13A
Pulsed
15
10
5
0
0
20
40
60
Total Gate Charge : Qg [nC]
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Datasheet
lElectrical characteristic curves
Switching Time : t [ns]
1000
Fig.20 Typical Switching Loss
vs. Drain - Source Voltage
Ta =
VDD=
VGS=
RG =
tf
150
25°C
300V
+18V/0V
0Ω
Switching Energy : E [µJ]
Fig.19 Typical Switching Time
vs. Drain Current
10000
100
td(off)
tr
10
td(on)
Ta =
ID =
VGS=
RG =
L=
100
25°C
13A
+18V/0V
0Ω
500μH
Eon
50
Eoff
1
0.1
1
10
0
100
100
Drain Current : ID [A]
400
600
25°C
300V
+18V/0V
0Ω
500μH
Eon
200
Eoff
0
0
20
500
Ta =
ID =
VDD=
VGS=
L=
400
25°C
13A
300V
+18V/0V
500μH
Eon
200
Eoff
0
40
Drain Current : ID [A]
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TSZ22111・15・001
400
Fig.22 Typical Switching Loss
vs. External Gate Resistance
Switching Energy : E [µJ]
Switching Energy : E [µJ]
Ta =
VDD=
VGS=
RG =
L=
300
Drain - Source Voltage : VDS [V]
Fig.21 Typical Switching Loss
vs. Drain Current
600
200
0
5
10
15
20
25
30
External Gate Resistance : RG [Ω]
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Datasheet
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge and Switching Time Measurement Circuit
Fig.1-2 Waveforms for Switching Time
Fig.2-1 Switching Energy Measurement Circuit
Fig.2-2 Waveforms for Switching Energy Loss
Eon = ID ∙ VDS dt
VDS
Eoff =
ID ∙ VDS dt
Vsurge
Irr
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
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Fig.3-2 Reverse Recovery Waveform
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Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
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