SCT3080ALGC11

SCT3080AL Datasheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 80mW ID 30A PD 134W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters 30 C11 Marking SCT3080AL ・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Value Unit VDSS 650 V Tc = 25°C ID *1 30 A Tc = 100°C ID *1 21 A ID,pulse *2 75 A VGSS -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Pulsed drain current Gate - Source voltage (DC) Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge Recommended Drive Voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.86 1.12 C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 650 - - V Tj = 25°C - 1 10 mA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA VGS (th) VDS = 10V, ID = 5mA 2.7 - 5.6 V - 80 104 mW Tj = 125°C - 105.6 - f = 1MHz, open drain - 13 - Gate threshold voltage VGS = 18V, ID = 10A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 RDS(on) *5 Tj = 25°C RG 2/12 W TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A - 3.8 - Input capacitance Ciss VGS = 0V - 571 - Output capacitance Coss VDS = 500V - 39 - Reverse transfer capacitance Crss f = 1MHz - 19 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 300V - 99 - Turn - on delay time td(on) *5 VDD = 300V, ID = 10A - 16 - VGS = 18V/0V - 26 - td(off) *5 RL = 30W - 27 - tf *5 RG = 0W - 16 - - 41 - Rise time tr Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss *5 Eon *5 Eoff *5 S pF pF ns VDD = 300V, ID=10A VGS = 18V/0V RG = 0W L=500mH *Eon includes diode reverse recovery mJ - 15 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD = 300V - 48 - Gate - Source charge Qgs *5 ID = 10A - 14 - Gate - Drain charge Qgd VGS = 18V - 17 - VDD = 300V, ID = 10A - 9.6 - Gate plateau voltage www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 *5 V(plateau) 3/12 nC V TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 30 A - - 75 A - 3.2 - V - 15 - ns - 53 - nC - 7 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm VGS = 0V, IS = 10A IF = 10A, VR = 300V di/dt = 1100A/ms *5 *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 160 1000 Operation in this area is limited by RDS(ON) 120 100 Drain Current : ID [A] Power Dissipation : PD [W] 140 100 80 60 40 10 PW = 100µs PW = 1ms 1 20 Ta = 25ºC Single Pulse PW = 10ms PW = 100ms 0.1 0 0 50 100 150 0.1 200 Case Temperature : TC [°C] 1 10 100 1000 Drain - Source Voltage : VDS [V] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 15 30 20V 18V 25 20V Ta = 25ºC Pulsed 18V 14V 20 Drain Current : ID [A] Drain Current : ID [A] 16V 12V 15 10 10V 16V 14V 10 Ta = 25ºC Pulsed 12V 10V 5 VGS= 8V 5 VGS= 8V 0 0 0 2 4 6 8 10 0 1 Drain - Source Voltage : VDS [V] 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 15 30 20V 20V 14V 16V 20 14V 18V 18V 10V 12V 15 10 VGS= 8V 5 10V 12V 16V Drain Current : ID [A] 25 Drain Current : ID [A] 2 10 VGS= 8V 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 30 100 VDS = 10V Pulsed 25 Drain Current : ID [A] 10 Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 20 15 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 10 5 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 5mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.32 Ta = 25ºC Pulsed 0.28 0.24 0.2 ID = 20A 0.16 0.12 ID = 10A 0.08 0.04 0 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] 0.32 Gate - Source Voltage : VGS [V] 0.28 VGS = 18V Pulsed 0.24 0.2 0.16 0.12 ID = 20A 0.08 ID = 10A 0.04 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [W] 1 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 10 10000 Capacitance : C [pF] 1000 Coss Stored Energy : EOSS [mJ] Ta = 25ºC Ciss Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 8 6 4 2 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 300 400 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 300V VGS = 18V RG = 0W Pulsed tf 1000 Switching Time : t [ns] 100 100 td(off) tr 10 td(on) 1 Ta = 25ºC VDD = 300V ID = 10A Pulsed 15 10 5 0 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 20 30 40 50 Total Gate Charge : Qg [nC] 9/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 100 400 Ta = 25ºC ID=10A VGS = 18V/0V RG=0W L=500mH Switching Energy : E [mJ] 80 70 60 50 Eon 40 30 Ta = 25ºC VDD=300V VGS = 18V/0V RG=0W L=500mH 350 Switching Energy : E [mJ] 90 Eoff 20 300 250 200 150 Eon 100 Eoff 50 10 0 0 100 200 300 400 0 500 Drain - Source Voltage : VDS [V] 5 10 15 20 25 30 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 400 Ta = 25ºC VDD=300V ID=10A VGS = 18V/0V L=500mH Switching Energy : E [mJ] 350 300 250 200 Eon 150 100 Eoff 50 0 0 5 10 15 20 25 30 External Gate Resistance : RG [W] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS = 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 300V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 8 1 Source - Drain Voltage : VSD [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10 100 Inverse Diode Forward Current : IS [A] 11/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Datasheet SCT3080AL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 TSQ50211-SCT3080AL 14.Jun.2018 - Rev.005 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. 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