SCT3080AW7TL

SCT3080AW7 Datasheet N-channel SiC power MOSFET lOutline VDSS 650V RDS(on) (Typ.) 80mΩ *1 TO-263-7L 29A ID PD 125W lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) 330 Tape width (mm) 24 ・DC/DC converters Embossed tape Type ・Switch mode power supplies Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 1000 TL SCT3080AW7 lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit VDSS 650 V Tc = 25°C ID *1 29 A Tc = 100°C ID *1 20 A 72 A -4 to +22 V -4 to +26 V Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) ID,pulse *2 VGSS Gate - Source voltage (DC) *3 Gate - Source surge voltage (tsurge < 300ns) VGSS_surge Recommended drive voltage VGS_op*4 0 / +18 V Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. V(BR)DSS Tvj = 25°C 650 - - Tvj = -55°C 650 - - Tvj = 25°C - 1 10 Tvj = 150°C - 2 - VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =650V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 80 104 mΩ Tvj = 150°C - 115 - f = 1MHz, open drain - 13 - VDS = 0V VGS (th) VDS = 10V, ID = 5mA Gate threshold voltage VGS = 18V, ID = 10A Static Drain - Source on - state resistance RDS(on) *5 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol Thermal resistance, junction - case*6 RthJC Unit Min. Typ. Max. - 0.90 1.2 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 1.31×10 -1 Rth2 2.00×10 -1 Rth3 5.29×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 1.46×10 -3 Cth2 1.50×10 -2 Cth3 1.37×10 -2 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A - 3.8 - Input capacitance Ciss VGS = 0V - 571 - Output capacitance Coss VDS = 500V - 39 - Reverse transfer capacitance Crss f = 1MHz - 19 - Effective output capacitance, energy related Co(er) - 99 - Total Gate charge Qg *5 - 48 - - 10 - - 25 - - 4 - - 13 - VGS = 0V VDS = 0V to 300V VDS = 300V S pF pF ID = 10A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 400V nC ID = 10A Rise time Turn - off delay time tr *5 VGS = 0V/+18V td(off) *5 RG = 0Ω, L = 750μH ns - 17 - See Fig. 2-1, 2-2, 2-3. - 12 - Eon includes diode reverse recovery. - 70 - Lσ = 50nH, Cσ = 10pF Fall time tf *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff μJ - 3/15 8 - TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Body diode continuous, forward current Conditions IS *1 Unit Min. Typ. Max. - - 29 A - - 72 A Tc = 25°C Body diode direct current, pulsed ISM Forward voltage VSD *5 VGS = 0V, IS = 10A - 3.2 - V IF = 10A - 18 - ns di/dt = 2500A/μs - 254 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 23 - A Reverse recovery time *2 trr *5 VR = 400V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum Tvj and for Max. RthJC. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed *6 The case is bottom of leadframe underneath the chip. Practial value of Rth(j-c) is influenced by design of the user. Discribed value is only vaild at the specific conditions such as JESD51-14. www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 140 Operation in this area is limited by RDS(on) Drain Current : ID [A] Power Dissipation : PD [W] 120 100 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 Tc = 25ºC Single Pulse *Calculation(PW10μs) 20 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Impedance vs. Pulse Width Transient Thermal Impedance : ZthJC [K/W] 1 0.1 0.01 Tc = 25ºC Single Pulse 0.001 0.00001 0.001 0.1 Pulse Width : PW [s] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 15 30 20V 18V 18V 16V 16V 20 Drain Current : ID [A] Drain Current : ID [A] 25 20V Tvj = 25ºC Pulsed 12V 14V 15 10 10V 14V Tvj = 25ºC Pulsed 10 12V 10V 5 VGS= 8V 5 VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics 0 Drain Current : ID [A] Tvj = 25ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -20 -30 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.7 Tvj = 150ºC Typical Output Characteristics(I) Fig.8 Tvj = 150ºC Typical Output Characteristics(II) 30 15 20V 20V Drain Current : ID [A] 18V 14V 16V 20 10V 12V 15 10 VGS= 8V 5 10V 12V 16V 10 VGS= 8V 5 Tvj = 150ºC Pulsed Tvj = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.9 Tvj = 150ºC 3rd Quadrant Characteristics Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage 6 Body Diode Forward Voltage : VSD [V] 0 Tvj = 150ºC Pulsed Drain Current : ID [A] 14V 18V Drain Current : ID [A] 25 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -20 -30 ID=10A 5 4 3 2 Tvj= 150ºC 1 Tvj= 25ºC 0 -10 -8 -6 -4 -2 0 -4 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 30 VDS = 10V Pulsed 25 10 Tvj= Tvj= Tvj= Tvj= 1 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 150ºC 75ºC 25ºC -25ºC 0.1 20 15 Tvj= Tvj= Tvj= Tvj= 10 150ºC 75ºC 25ºC -25ºC 5 0 0.01 0 2 4 6 0 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Virtual Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 5mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 0 1 Tvj = 150ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 0.1 -50 0 50 100 150 200 0.1 Virtual Junction Temperature : Tvj [ºC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Virtual Junction Temperature 0.32 0.16 Tvj = 25ºC Pulsed 0.28 0.24 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] lElectrical characteristic curves ID= 20A 0.20 0.16 ID= 10A 0.12 0.08 ID= -10A 0.04 0.00 ID= 20A 0.12 ID= 10A 0.10 0.08 ID= -10A 0.06 0.04 0.02 0.00 8 10 12 14 16 18 20 22 -50 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Fig.18 Normalized Drain - Source Breakdown Voltage vs. Virtual Junction Temperature 1 1.04 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] VGS = 18V Pulsed 0.14 0.1 Tvj = 150ºC Tvj = 125ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC VGS = 18V Pulsed 0.01 1.03 1.02 1.01 1.00 0.99 0.98 1 10 100 -50 Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] 9/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 10 10000 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Tvj = 25ºC Ciss 1000 Coss 100 Crss 10 Tvj = 25ºC f = 1MHz VGS = 0V 8 6 4 2 0 1 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Tvj = 25ºC VDD = 300V ID = 10A Pulsed 15 10 5 0 0 10 20 30 40 50 Total Gate Charge : Qg [nC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lElectrical characteristic curves Fig.22 Typical Switching Time 　　　　　vs. External Gate Resistance Fig.23 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 80 Tvj = 25°C VDD= 400V VGS= +18V/0V ID = 10A L = 750μH 60 Tvj = 25°C ID = 10A VGS= +18V/0V RG = 0Ω 70 Switching Energy : E [µJ] Switching Time : t [ns] 80 td(off) tr 40 tf 20 60 L= 750μH Eon 50 40 30 20 Eoff 10 td(on) 0 0 0 10 20 100 30 External Gate Resistance : RG [Ω] 300 400 500 Drain - Source Voltage : VDS [V] Fig.24 Typical Switching Loss 　　　　　vs. Drain Current Fig.25 Typical Switching Loss 　　　　　vs. External Gate Resistance 400 400 Tvj = 25°C VDD= 400V VGS= +18V/0V RG = 0Ω 300 L= 250 750μH 200 150 Eon 100 Tvj = 25°C ID = 10A VDD= 400V VGS= +18V/0V 350 Switching Energy : E [µJ] 350 Switching Energy : E [µJ] 200 Eoff 50 300 L= 250 750μH 200 Eon 150 100 Eoff 50 0 0 0 10 20 0 30 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ‫ ׬‬ID ∙ VDS dt VDS Irr Eoff = ‫ ׬‬ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/15 Fig.3-2 Reverse Recovery Waveform TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lPackage Dimensions Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 RECOMMENDED FOOTPRINT DIMENSIO NS Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Datasheet SCT3080AW7 lDie Bonding Layout : Die position ・Front view of the packaging. ・Dimensions are design values. ・If the heat sink is to be installed, it should be in contact with the die bonding point. Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/15 TSQ50252-SCT3080AW7 1.Nov.2022 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. 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The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001