SCT3080KL
Datasheet
N-channel SiC power MOSFET
Outline
VDSS
1200V
RDS(on) (Typ.)
80m
ID
31A
PD
165W
TO-247N
(1)(2)(3)
Inner circuit
(2)
Features
(1) Gate
(2) Drain
(3) Source
1) Low on-resistance
*1
(1)
2) Fast switching speed
*1 Body Diode
3) Fast reverse recovery
(3)
4) Easy to parallel
Packaging specifications
5) Simple to drive
Packing
Tube
6) Pb-free lead plating ; RoHS compliant
Reel size (mm)
-
Tape width (mm)
-
Type
Application
Basic ordering unit (pcs)
・Solar inverters
C11
Taping code
・DC/DC converters
30
Marking
SCT3080KL
・Switch mode power supplies
・Induction heating
・Motor drives
Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Value
Unit
VDSS
1200
V
Tc = 25°C
ID
*1
31
A
Tc = 100°C
ID
*1
22
A
ID,pulse *2
77
A
VGSS
4 to +22
V
4 to +26
V
VGS_op
0 / +18
V
Tj
175
°C
Tstg
55 to 175
°C
Pulsed drain current
Gate - Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec)
VGSS_surge
Recommended Drive Voltage
Junction temperature
Range of storage temperature
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Symbol
1/12
*4
2018.04 - Rev.E
Datasheet
SCT3080KL
Thermal resistance
Values
Parameter
Symbol
RthJC
Thermal resistance, junction - case
Unit
Min.
Typ.
Max.
-
0.70
0.91
C/W
Electrical characteristics (Ta = 25°C)
Values
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Unit
Conditions
Min.
Typ.
Max.
1200
-
-
V
Tj = 25°C
-
1
10
A
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS
VGS = 22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS
VGS = 4V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 5mA
2.7
-
5.6
V
-
80
104
m
Tj = 125°C
-
120
-
f = 1MHz, open drain
-
12
-
Gate threshold voltage
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
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© 2016 ROHM Co., Ltd. All rights reserved.
RDS(on) *3 Tj = 25°C
RG
2/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
*3
Conditions
Unit
Min.
Typ.
Max.
VDS = 10V, ID = 10A
-
4.4
-
Transconductance
gfs
Input capacitance
Ciss
VGS = 0V
-
785
-
Output capacitance
Coss
VDS = 800V
-
75
-
Reverse transfer capacitance
Crss
f = 1MHz
-
35
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 600V
-
74
-
Turn - on delay time
td(on)
VDD = 400V, ID = 10A
-
15
-
VGS = 18V/0V
-
22
-
RL = 40
-
29
-
RG = 0
-
24
-
-
132
-
Rise time
tr
Turn - off delay time
Fall time
Turn - off switching loss
*3
*3
td(off)
tf
Turn - on switching loss
*3
*3
Eon *3
Eoff
*3
S
pF
pF
ns
VDD = 600V, ID=10A
VGS = 18V/0V
RG = 0 L=750H
*Eon includes diode
reverse recovery
J
-
18
-
Gate Charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
VDD = 600V
-
60
-
Total gate charge
Qg
*3
Gate - Source charge
Qgs
*3
ID = 10A
-
15
-
Gate - Drain charge
Qgd
*3
VGS = 18V
-
25
-
VDD = 600V, ID = 10A
-
9.6
-
Gate plateau voltage
V(plateau)
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW 10s, Duty cycle 1%
*3 Pulsed
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© 2016 ROHM Co., Ltd. All rights reserved.
3/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Inverse diode continuous,
forward current
Symbol
IS
Conditions
*1
Unit
Min.
Typ.
Max.
-
-
31
A
-
-
77
A
-
3.2
-
V
-
17
-
ns
-
50
-
nC
-
6
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD
Reverse recovery time
trr
*3
VGS = 0V, IS = 10A
*3
Reverse recovery charge
Qrr *3
Peak reverse recovery current
Irrm
IF =10A, VR = 600V
di/dt = 1100A/s
*3
*4 Example of acceptable Vgs waveform
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4/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
200
1000
Operation in this area is limited by RDS(ON)
160
100
140
Drain Current : ID [A]
Power Dissipation : PD [W]
180
120
100
80
60
40
PW = 100µs
10
PW = 1ms
PW = 10ms
1
PW = 100ms
Ta = 25ºC
Single Pulse
20
0.1
0
0
50
100
150
0.1
200
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Case Temperature : TC [°C]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
Ta = 25ºC
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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5/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
15
30
20V
20V
Ta = 25ºC
Pulsed
18V
18V
14V
20
Drain Current : ID [A]
Drain Current : ID [A]
16V
12V
10
10V
14V
Ta = 25ºC
Pulsed
16V
10
12V
10V
5
VGS= 8V
VGS= 8V
0
0
0
2
4
6
8
10
0
Drain - Source Voltage : VDS [V]
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 150ºC Typical Output
Characteristics(I)
Fig.7 Tj = 150ºC Typical Output
Characteristics(II)
15
30
20V
18V
20V
18V
14V
16V
20
10V
12V
14V
12V
16V
Drain Current : ID [A]
Drain Current : ID [A]
1
10
VGS= 8V
10V
10
VGS= 8V
5
Ta = 150ºC
Pulsed
Ta = 150ºC
Pulsed
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
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© 2016 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
Drain - Source Voltage : VDS [V]
6/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics (I)
Fig.9 Typical Transfer Characteristics (II)
30
100
VDS = 10V
Pulsed
VDS = 10V
Pulsed
Drain Current : ID [A]
Drain Current : ID [A]
10
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
1
0.1
0.01
20
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
10
0
0
2
4
6
8
10 12 14 16 18 20
0
Gate - Source Voltage : VGS [V]
6
8
10 12 14 16 18 20
Fig.11 Transconductance vs. Drain Current
10
6
VDS = 10V
ID = 5mA
5
VDS = 10V
Pulsed
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
4
Gate - Source Voltage : VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
4
3
2
1
0
-50
2
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0
50
100
150
0.1
200
Junction Temperature : Tj [ºC]
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© 2016 ROHM Co., Ltd. All rights reserved.
1
10
Drain Current : ID [A]
7/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.32
Ta = 25ºC
Pulsed
0.28
0.24
0.2
0.16
ID = 21A
0.12
ID = 10A
0.08
0.04
0
6
8
10
12
14
16
18
20
22
Static Drain - Source On-State Resistance
: RDS(on) []
Static Drain - Source On-State Resistance
: RDS(on) []
0.32
Gate - Source Voltage : VGS [V]
0.28
VGS = 18V
Pulsed
0.24
0.2
0.16
ID = 21A
0.12
0.08
ID = 10A
0.04
0
-50
0
50
100
150
200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
Static Drain - Source On-State Resistance
: RDS(on) []
1
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
VGS = 18V
Pulsed
0.01
1
10
100
Drain Current : ID [A]
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8/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
Fig.16 Coss Stored Energy
25
10000
Ciss
1000
Capacitance : C [pF]
Coss Stored Energy : EOSS [J]
Ta = 25ºC
Coss
100
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
20
15
10
5
0
1
0.1
1
10
100
0
1000
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Fig.18 Dynamic Input Characteristics
20
10000
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0
Pulsed
tf
1000
Switching Time : t [ns]
100 200 300 400 500 600 700 800
100
td(off)
tr
10
td(on)
1
Ta = 25ºC
VDD = 600V
ID = 10A
Pulsed
15
10
5
0
0.1
1
10
100
0
Drain Current : ID [A]
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10
20
30
40
50
60
70
Total Gate Charge : Qg [nC]
9/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
Fig.20 Typical Switching Loss
vs. Drain Current
300
1200
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0
L=750H
Switching Energy : E [J]
240
210
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0
L=750H
1000
Switching Energy : E [J]
270
Eon
180
150
120
90
60
Eoff
30
800
600
400
Eon
200
Eoff
0
0
200
400
600
800
0
1000
Drain - Source Voltage : VDS [V]
5
10
15
20
25
30
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
1200
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=750H
Switching Energy : E [J]
1000
800
600
400
Eon
200
Eoff
0
0
5
10
15
20
25
30
External Gate Resistance : RG []
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10/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Electrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
10
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
VGS = 0V
Pulsed
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.01
Ta = 25ºC
di / dt = 1100A / us
VR = 600V
VGS = 0V
Pulsed
100
10
0
1
2
3
4
5
6
7
1
8
Source - Drain Voltage : VSD [V]
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© 2016 ROHM Co., Ltd. All rights reserved.
10
100
Inverse Diode Forward Current : IS [A]
11/12
2018.04 - Rev.E
Datasheet
SCT3080KL
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Same type
device as
D.U.T.
VDS
Irr
Eoff = ID×VDS
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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12/12
2018.04 - Rev.E
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1107 S
Datasheet
SCT3080KL - Web Page
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Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
SCT3080KL
TO-247N
450
30
Tube
inquiry
Yes