SCT3080KRHRC15

SCT3080KRHR Automotive Grade N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS(on) (Typ.) 80mΩ *1 TO-247-4L 31A ID PD 165W (1) (2)(3)(4) lInner circuit lFeatures 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Tube Type Basic ordering unit (pcs) 30 Taping code C15 Marking SCT3080KR lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Drain - Source Voltage Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 31 A Tc = 100°C ID *1 22 A ID,pulse *2 77 A VGSS -4 to +22 V VGSS_surge*3 -4 to +26 V Recommended drive voltage VGS_op*4 0 / +18 V Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C Continuous Drain current Pulsed Drain current (Tc = 25°C) Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. V(BR)DSS Tvj = 25°C 1200 - - Tvj = -55°C 1200 - - Tvj = 25°C - 1 10 Tvj = 150°C - 2 - VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 80 104 mΩ Tvj = 150°C - 136 - f = 1MHz, open drain - 12 - VDS = 0V VGS (th) VDS = 10V, ID = 5mA Gate threshold voltage VGS = 18V, ID = 10A Static Drain - Source on - state resistance RDS(on) *5 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.70 0.91 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 8.52×10 -2 Rth2 4.15×10 -1 Rth3 2.06×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 1.22×10 -3 Cth2 6.20×10 -3 Cth3 3.49×10 -2 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 Datasheet SCT3080KRHR lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A - 4.4 - Input capacitance Ciss VGS = 0V - 785 - Output capacitance Coss VDS = 800V - 75 - Reverse transfer capacitance Crss f = 1MHz - 35 - Effective output capacitance, energy related Co(er) - 74 - Total Gate charge Qg *5 - 60 - - 11 - - 31 - - 5 - - 14 - VGS = 0V VDS = 0V to 600V VDS = 600V S pF pF ID = 10A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 600V nC ID = 15A Rise time Turn - off delay time tr *5 VGS = 0V/+18V td(off) *5 RG = 0Ω, L = 750μH ns - 19 - See Fig. 2-1, 2-2, 2-3. - 13 - Eon includes diode reverse recovery. - 168 - Lσ = 50nH, Cσ = 10pF Fall time tf *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff μJ - 3/15 21 - TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 Datasheet SCT3080KRHR lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Body diode continuous, forward current Conditions IS *1 Unit Min. Typ. Max. - - 31 A - - 77 A Tc = 25°C Body diode direct current, pulsed ISM Forward voltage VSD *5 VGS = 0V, IS = 10A - 3.2 - V IF = 10A - 17 - ns di/dt = 2500A/μs - 261 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 26 - A Reverse recovery time *2 trr *5 VR = 600V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum Tvj and for Max. RthJC. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 180 Operation in this area is limited by RDS(on) 100 140 Drain Current : ID [A] Power Dissipation : PD [W] 160 120 100 80 60 10 PW = 1μs* PW = 10μs* PW = 100μs PW = 1ms 1 PW = 10ms 40 Tc = 25ºC Single Pulse *Calculation(PW10μs) 20 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Impedance vs. Pulse Width Transient Thermal Impedance : ZthJC [K/W] 1 0.1 0.01 Tc = 25ºC Single Pulse 0.001 0.000001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 15 30 20V 16V 20 18V Drain Current : ID [A] 18V Drain Current : ID [A] 20V Tvj = 25ºC Pulsed 12V 14V 10 10V 14V Tvj = 25ºC Pulsed 16V 10 12V 10V 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics 0 Drain Current : ID [A] Tvj = 25ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -20 -30 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.7 Tvj = 150ºC Typical Output Characteristics(I) Fig.8 Tvj = 150ºC Typical Output Characteristics(II) 15 30 20V 14V 18V 16V 20 14V 18V Drain Current : ID [A] Drain Current : ID [A] 20V 10V 12V 10 VGS= 8V 12V 10V 16V 10 VGS= 8V 5 Tvj = 150ºC Pulsed Tvj = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 3 4 5 Fig.10 Body Diode Forward Voltage vs. Gate - Source Voltage 0 Body Diode Forward Voltage : VSD [V] 6 Tvj = 150ºC Pulsed Drain Current : ID [A] 2 Drain - Source Voltage : VDS [V] Fig.9 Tvj = 150ºC 3rd Quadrant Characteristics -10 1 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 ID=10A 5 4 3 2 Tvj= 150ºC 1 Tvj= 25ºC 0 -10 -8 -6 -4 -2 0 -4 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 30 VDS = 10V Pulsed 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Tvj= 150ºC Tvj= 75ºC Tvj= 25ºC Tvj= -25ºC 1 0.1 0.01 20 Tvj= 150ºC Tvj= 75ºC Tvj= 25ºC Tvj= -25ºC 10 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Virtual Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 5mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 0 -50 VDS = 10V Pulsed 1 Tvj = 150ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 0.1 0 50 100 150 0.1 200 Virtual Junction Temperature : Tvj [ºC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Virtual Junction Temperature 0.32 0.18 Tvj = 25ºC Pulsed 0.28 0.24 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] lElectrical characteristic curves ID= 21A 0.20 ID= 10A 0.16 0.12 ID= -10A 0.08 0.04 0.15 ID= 21A ID=10A 0.12 ID= -10A 0.09 0.06 0.03 0.00 0.00 8 10 12 14 16 18 20 -50 22 Gate - Source Voltage : VGS [V] 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Fig.18 Normalized Drain - Source Breakdown Voltage vs. Virtual Junction Temperature 1 1.04 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] VGS = 18V Pulsed 0.1 Tvj = 150ºC Tvj = 125ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC VGS = 18V Pulsed 0.01 1.03 1.02 1.01 1.00 0.99 0.98 1 10 100 -50 Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Virtual Junction Temperature : Tvj [ºC] 9/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.19 Typical Capacitance vs. Drain - Source Voltage Fig.20 Coss Stored Energy 25 10000 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Tvj = 25ºC Ciss 1000 Coss 100 Crss 10 Tvj = 25ºC f = 1MHz VGS = 0V 1 20 15 10 5 0 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Tvj = 25ºC VDD = 600V ID = 10A Pulsed 15 10 5 0 0 10 20 30 40 50 60 70 Total Gate Charge : Qg [nC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lElectrical characteristic curves Fig.22 Typical Switching Time vs. External Gate Resistance Fig.23 Typical Switching Loss vs. Drain - Source Voltage 100 350 Tvj = 25°C VDD= 600V VGS= +18V/0V ID = 15A L = 750μH 300 td(off) Switching Energy : E [µJ] Switching Time : t [ns] 80 Tvj = 25°C ID = 15A VGS= +18V/0V RG = 0Ω tr 60 tf 40 20 250 L= 750μH Eon 200 150 100 50 Eoff td(on) 0 0 0 10 20 300 30 External Gate Resistance : RG [Ω] 500 600 700 Fig.25 Typical Switching Loss vs. External Gate Resistance 1200 1200 Tvj = 25°C VDD= 600V VGS= +18V/0V RG = 0Ω 750μH L= 900 Tvj = 25°C ID = 15A VDD= 600V VGS= +18V/0V 1000 Switching Energy : E [µJ] 800 800 Drain - Source Voltage : VDS [V] Fig.24 Typical Switching Loss vs. Drain Current 1000 Switching Energy : E [µJ] 400 600 400 Eon 800 L= 750μH 600 Eon 400 200 200 Eoff Eoff 0 0 0 5 10 15 20 25 0 30 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com © 2021 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ‫ ׬‬ID ∙ VDS dt VDS Irr Eoff = ‫ ׬‬ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/15 Fig.3-2 Reverse Recovery Waveform TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lPackage Dimensions Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 SCT3080KRHR Datasheet lDie Bonding Layout : Die position ・Front view of the packaging. ・Dimensions are design values. ・If the heat sink is to be installed, it should be in contact with the die bonding point. Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/15 TSQ50214-SCT3080KRHR 9.Nov.2022 - Rev.003 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. 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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1107 S Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001