SCT3080KW7TL

SCT3080KW7 Datasheet N-channel SiC power MOSFET lOutline VDSS RDS(on) (Typ.) ID*1 PD 1200V 80mΩ 30A 159W TO-263-7L lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) 330 Tape width (mm) 24 ・DC/DC converters Type ・Switch mode power supplies Embossed tape Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 1000 TL SCT3080KW7 lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 30 A Tc = 100°C ID *1 21 A 75 A -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C ID,pulse *2 Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) VGSS_surge Recommended drive voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristics (Ta = 25°C) Parameter Symbol Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 1200 - - Tj = -55°C 1200 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 80 104 mΩ Tj = 150°C - 136 - f = 1MHz, open drain - 12 - VDS = 0V VGS (th) VDS = 10V, ID = 5mA Gate threshold voltage VGS = 18V, ID = 10A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.73 0.94 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 1.08×10 -1 Rth2 3.73×10 -1 Rth3 3.41×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 4.72×10 -4 Cth2 3.97×10 -3 Cth3 1.31×10 -2 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A - 4.4 - Input capacitance Ciss VGS = 0V - 785 - Output capacitance Coss VDS = 800V - 75 - Reverse transfer capacitance Crss f = 1MHz - 35 - Effective output capacitance, energy related Co(er) - 74 - Total Gate charge Qg *5 - 60 - - 11 - - 31 - - 5 - - 13 - VGS = 0V VDS = 0V to 600V VDS = 600V Unit S pF pF ID = 10A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 600V nC ID = 10A Rise time Turn - off delay time tr *5 VGS = 0V/+18V td(off) *5 RG = 0Ω, L = 750μH ns - 20 - See Fig. 2-1, 2-2, 2-3. - 12 - Eon includes diode reverse recovery. - 149 - Lσ = 50nH, Cσ = 10pF Fall time tf *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff μJ - 3/12 12 - TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time Conditions Values Unit Min. Typ. Max. - - 30 A - - 75 A - 3.2 - V - 17 - ns di/dt = 2500A/μs - 261 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 26 - A Tc = 25°C trr *5 VGS = 0V, ID = 10A IF = 10A VR = 600V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve Operation in this area is limited by RDS(on) 100 180 PW = 100ns* 140 Drain Current : ID [A] Power Dissipation : PD [W] 160 120 100 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs PW = 1ms PW = 10ms 1 Ta = 25ºC Single Pulse *Calculation(PW10μs) 20 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : ZthJC [K/W] 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.000001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 15 30 20V 16V 20 18V Drain Current : ID [A] 18V Drain Current : ID [A] 20V Ta = 25ºC Pulsed 12V 14V 10 10V 14V Ta = 25ºC Pulsed 16V 10 12V 10V 5 VGS= 8V VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics 0 Drain Current : ID [A] Ta = 25ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -10 -20 -30 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.8 Tj = 150ºC Typical Output Fig.7 Tj = 150ºC Typical Output Characteristics(I) 15 30 Characteristics(II) 20V 14V 18V 16V 20 14V 18V Drain Current : ID [A] Drain Current : ID [A] 20V 10V 12V 10 VGS= 8V 12V 10V 16V 10 VGS= 8V 5 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] Body Diode Forward Voltage : VSD [V] Drain Current : ID [A] Ta = 150ºC Pulsed VGS = -4V VGS = -2V VGS = 0V VGS = 18V -20 -30 -8 -6 -4 -2 0 4 5 6 ID=10A 5 4 3 2 Ta= 150ºC 1 Ta= 25ºC 0 -4 Drain - Source Voltage : VDS [V] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage 0 -10 2 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics -10 1 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 30 VDS = 10V Pulsed 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 0.01 20 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 10 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 5mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 VDS = 10V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 -50 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.18 Ta = 25ºC Pulsed 0.28 0.24 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.32 ID= 21A 0.20 ID= 10A 0.16 0.12 ID= -10A 0.08 0.04 VGS = 18V Pulsed 0.15 ID=10A 0.12 ID= -10A 0.09 0.06 0.03 0.00 0.00 8 10 12 14 16 18 20 -50 22 Gate - Source Voltage : VGS [V] 50 100 150 200 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature Normalized Drain - Source Breakdown Voltage 1.04 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 Static Drain - Source On-State Resistance : RDS(on) [Ω] ID= 21A 0.01 1.03 1.02 1.01 1.00 0.99 0.98 1 10 100 -50 Drain Current : ID [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 25 10000 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Ta = 25ºC Ciss 1000 Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 1 20 15 10 5 0 0.1 1 10 100 1000 0 Drain - Source Voltage : VDS [V] 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 600V ID = 10A Pulsed 15 10 5 0 0 10 20 30 40 50 60 70 Total Gate Charge : Qg [nC] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 Fig.22 Typical Switching Time 　　　　　vs. External Gate Resistance Fig.23 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 100 300 Ta = VDD= VGS= ID = L= 80 25°C 600V +18V/0V 10A 750μH td(off) 60 Switching Energy : E [µJ] Switching Time : t [ns] lElectrical characteristic curves tr 40 tf 20 Ta = ID = VGS= RG = L= 250 200 25°C 10A +18V/0V 0Ω 750μH Eon 150 100 50 Eoff td(on) 0 0 0 10 20 300 30 500 600 700 800 Fig.24 Typical Switching Loss 　　　　　vs. Drain Current Fig.25 Typical Switching Loss 　　　　　vs. External Gate Resistance 1200 1200 Ta = VDD= VGS= RG = L= 1000 800 900 Drain - Source Voltage : VDS [V] 25°C 600V +18V/0V 0Ω 750μH Switching Energy : E [µJ] Switching Energy : E [µJ] External Gate Resistance : RG [Ω] 400 600 400 Eon 200 Ta = ID = VDD= VGS= L= 1000 800 25°C 10A 600V +18V/0V 750μH 600 400 Eon 200 Eoff Eoff 0 0 0 5 10 15 20 25 0 30 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/12 TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Datasheet SCT3080KW7 lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Irr Eoff = ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2020 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 Fig.3-2 Reverse Recovery Waveform TSQ50252-SCT3080KW7 4.Aug.2020 - Rev.001 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001