SCT3105KLGC11

SCT3105KL Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 105mΩ ID 24A PD 134W TO-247N (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery 4) Easy to parallel lPackaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type lApplication Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters C11 Marking ・Switch mode power supplies 30 SCT3105KL ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 24 A Tc = 100°C ID *1 17 A ID,pulse *2 60 A VGSS -4 to +22 V VGSS_surge*3 -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C Pulsed drain current Gate - Source voltage (DC) Gate - Source Surge Voltage (tsurge < 300nsec) Recommended Drive Voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 0.86 1.12 C/W lElectrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 μA Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA 2.7 - 5.6 V - 105 137 mΩ Tj = 125°C - 158 - f = 1MHz, open drain - 13 - Gate threshold voltage VGS (th) VDS = 10V, ID = 3.81mA VGS = 18V, ID = 7.6A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 RDS(on) *5 Tj = 25°C RG 2/12 Ω TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 7.6A - 3.4 - Input capacitance Ciss VGS = 0V - 574 - Output capacitance Coss VDS = 800V - 59 - Reverse transfer capacitance Crss f = 1MHz - 28 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 159 - Turn - on delay time td(on) *5 VDD = 400V, ID = 7.6A - 17 - VGS = 18V/0V - 27 - td(off) *5 RL = 53Ω - 31 - tf *5 RG = 0Ω - 17 - - 159 - Rise time tr Turn - off delay time Fall time Turn - on switching loss Turn - off switching loss *5 Eon *5 Eoff *5 S pF pF ns VDD = 600V, ID=7.6A VGS = 18V/0V RG = 0Ω L=750μH *Eon includes diode reverse recovery μJ - 2 - lGate Charge characteristics (Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *5 VDD = 600V - 51 - Gate - Source charge Qgs *5 ID = 7.6A - 14 - Gate - Drain charge Qgd VGS = 18V - 21 - VDD = 600V, ID = 7.6A - 9.6 - Gate plateau voltage www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 *5 V(plateau) 3/12 nC V TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Body diode continuous, forward current Symbol Conditions IS *1 Unit Min. Typ. Max. - - 24 A - - 60 A - 3.2 - V - 15 - ns - 53 - nC - 6.5 - A Tc = 25°C Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm VGS = 0V, IS = 7.6A IF =7.6A, VR = 600V di/dt = 1100A/μs *5 *1 Limited only by maximum temperature allowed. *2 PW  10s, Duty cycle  1% *3 Example of acceptable Vgs waveform *4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 4/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 160 1000 Operation in this area is limited by RDS(ON) 120 100 Drain Current : ID [A] Power Dissipation : PD [W] 140 100 80 60 40 PW = 100µs 10 PW = 1ms PW = 100ms 20 0.1 0 25 75 125 PW = 10ms 1 Ta = 25ºC Single Pulse 0.1 175 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Case Temperature : Tc [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 1 0.1 Ta = 25ºC Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 5/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 12 24 20V 18V 14V 16V 12V 16 12 10V 8 4 20V 18V 10 Drain Current : ID [A] Drain Current : ID [A] 20 Ta = 25ºC Pulsed Ta = 25ºC Pulsed 8 10V 6 4 VGS= 8V 2 VGS= 8V 0 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 12 24 20V 20V 12V 18V 16 18V 10 16V 16V 14V 14V Drain Current : ID [A] 20 Drain Current : ID [A] 12V 14V 16V 10V 12 8 VGS= 8V 4 8 12V 10V 6 VGS= 8V 4 2 Ta = 150ºC Pulsed Ta = 150ºC Pulsed 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 24 100 VDS = 10V Pulsed 20 Drain Current : ID [A] 10 Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 16 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 12 8 4 0 0.01 0 2 4 6 8 0 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.11 Transconductance vs. Drain Current 10 6 VDS = 10V ID = 3.81mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 -50 2 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1 10 Drain Current : ID [A] 7/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.4 Ta = 25ºC Pulsed 0.35 0.3 0.25 ID = 16A 0.2 0.15 ID = 7.6A 0.1 0.05 0 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.4 Gate - Source Voltage : VGS [V] 0.35 VGS = 18V Pulsed 0.3 0.25 0.2 ID = 16A 0.15 0.1 ID = 7.6A 0.05 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [Ω] 1 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 8/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 20 10000 Ciss 1000 Capacitance : C [pF] Coss Stored Energy : Eoss [J] Ta = 25ºC Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 15 10 5 0 1 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 400 600 800 Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta = 25ºC VDD = 400V VGS = 18V RL = 53Ω RG = 0Ω Pulsed tf Gate - Source Voltage : VGS [V] 1000 Switching Time : t [ns] 200 100 td(off) 10 td(on) tr 1 Ta = 25ºC VDD = 600V ID = 7.6A Pulsed 15 10 5 0 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 10 20 30 40 50 60 Total Gate Charge : Qg [nC] 9/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 300 600 Switching Energy : E [J] 240 210 Switching Energy : E [J] Ta = 25ºC ID=10A VGS = 18V/0V RG=0Ω L=750μH 270 Eon 180 150 120 90 60 30 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0Ω L=750μH 400 200 Eon Eoff Eoff 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 5 10 15 20 25 30 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance Switching Energy : E [J] 600 Ta = 25ºC VDD=600V ID=7.6A VGS = 18V/0V L=750μH 400 Eon 200 Eoff 0 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 10/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lElectrical characteristic curves Fig.22 Body Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Body Diode Forward Current 1000 10 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 VGS = 0V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 Ta = 25ºC di / dt = 1100A / µs VR = 600V VGS = 0V Pulsed 100 10 0.01 0 1 2 3 4 5 6 7 1 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 10 100 Body Diode Forward Current : IS [A] 11/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Datasheet SCT3105KL lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 12/12 TSQ50211-SCT3105KL 14.Jun.2018 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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