SCT3105KRC14

SCT3105KR N-channel SiC power MOSFET Datasheet lOutline VDSS RDS(on) (Typ.) ID*1 PD 1200V 105mΩ 24A 134W TO-247-4L (1) (2)(3)(4) lInner circuit lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications lApplication Packing ・Solar inverters Reel size (mm) - Tape width (mm) - ・DC/DC converters Type ・Switch mode power supplies Tube Basic ordering unit (pcs) ・Induction heating Taping code ・Motor drives Marking 30 C14 SCT3105KR lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Value Unit VDSS 1200 V Tc = 25°C ID *1 24 A Tc = 100°C ID *1 17 A 60 A -4 to +22 V -4 to +26 V 0 / +18 V Tj 175 °C Tstg -55 to +175 °C ID,pulse *2 Pulsed Drain current VGSS Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) VGSS_surge Recommended drive voltage VGS_op Junction temperature Range of storage temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 Symbol 1/12 *4 *3 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Drain - Source breakdown voltage Values Conditions Min. Typ. Max. V(BR)DSS Tj = 25°C 1200 - - Tj = -55°C 1200 - - Tj = 25°C - 1 10 Tj = 150°C - 2 - Unit VGS = 0V, ID = 1mA V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, - - -100 nA 2.7 - 5.6 V - 105 137 mΩ Tj = 150°C - 179 - f = 1MHz, open drain - 13 - VDS = 0V VGS (th) VDS = 10V, ID = 3.81mA Gate threshold voltage μA VGS = 18V, ID = 7.6A Static Drain - Source on - state resistance RDS(on) *5 Tj = 25°C RG Gate input resistance Ω lThermal resistance Parameter Symbol RthJC Thermal resistance, junction - case Values Min. Typ. Max. - 0.86 1.12 Unit °C/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 1.14×10 -1 Rth2 5.07×10 -1 Rth3 2.51×10 -1 K/W Tj PD Symbol Cth2 Unit Cth1 5.02×10 -4 Cth2 4.91×10 -3 Cth3 4.99×10 -2 Rth,n Rth1 Cth1 Value Ws/K Tc Cth,n Ta www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 7.6A - 3.4 - Input capacitance Ciss VGS = 0V - 574 - Output capacitance Coss VDS = 800V - 59 - Reverse transfer capacitance Crss f = 1MHz - 28 - Effective output capacitance, energy related Co(er) - 159 - Total Gate charge Qg *5 - 51 - - 10 - - 25 - - 4 - VGS = 0V/+18V - 12 - RG = 0Ω, L = 750μH - 16 - See Fig. 2-1, 2-2, 2-3. - 10 - Eon includes diode reverse recovery. - 125 - *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 Rise time Turn - off delay time Fall time tr *5 td(off) tf *5 *5 Turn - on switching loss Eon *5 Turn - off switching loss *5 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff VGS = 0V VDS = 0V to 600V VDS = 600V ID = 7.6A VGS = 18V See Fig. 1-1. VDS = 600V ID = 7.6A Lσ = 50nH, Cσ = 10pF S pF pF nC ns μJ - 3/12 Unit 8 - TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Body diode continuous, forward current IS *1 Body diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 Conditions Values Unit Min. Typ. Max. - - 24 A - - 60 A - 3.2 - V - 13 - ns di/dt = 2500A/μs - 175 - nC Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. - 22 - A Tc = 25°C VGS = 0V, ID = 7.6A IF = 7.6A VR = 600V *1 Limited by maximum temperature allowed. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 160 Operation in this area is limited by RDS(on) 120 Drain Current : ID [A] Power Dissipation : PD [W] 140 100 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs 20 0 25 75 125 0.1 175 Case Temperature : TC [°C] PW = 1ms PW = 10ms 1 Ta = 25ºC Single Pulse *Calculation(PW10μs) 0.1 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Resistance : ZthJC [K/W] 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.000001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Drain Current : ID [A] 20 12 20V 18V 16V 14V Ta = 25ºC Pulsed 10 Drain Current : ID [A] 24 Fig.5 Typical Output Characteristics(II) 12V 16 12 10V 8 4 0 2 4 6 8 18V 16V 14V 12V Ta = 25ºC Pulsed 8 10V 6 4 VGS= 8V 2 VGS= 8V 0 20V 0 10 Drain - Source Voltage : VDS [V] 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 25ºC 3rd Quadrant Characteristics 0 Ta = 25ºC Pulsed Drain Current : ID [A] -4 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -8 -12 -16 -20 -24 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.7 Tj = 150ºC Typical Output Characteristics(I) 24 12V 18V 16V Drain Current : ID [A] Drain Current : ID [A] 20V 20V 20 Fig.8 Tj = 150ºC Typical Output Characteristics(II) 12 14V 16 10V 12 8 VGS= 8V 4 Ta = 150ºC Pulsed 0 0 2 4 6 8 10 18V 8 14V 16V VGS= 8V 4 2 0 10 Ta = 150ºC Pulsed 0 Drain Current : ID [A] VGS = -4V VGS = -2V VGS = 0V VGS = 18V -12 -16 -20 -24 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2 3 4 5 Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage Body Diode Forward Voltage : VSD [V] Ta = 150ºC Pulsed -8 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150ºC 3rd Quadrant Characteristics -4 10V 6 Drain - Source Voltage : VDS [V] 0 12V 6 ID=7.6A 5 4 3 2 Ta= 150ºC 1 0 Ta= 25ºC -4 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 24 VDS = 10V Pulsed 20 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 1 0.1 16 12 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 8 4 0.01 0 2 4 6 0 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 6 8 10 12 14 16 18 20 Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V Pulsed VDS = 10V ID = 3.81mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 4 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 4 3 2 1 0 2 -50 0 50 100 150 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 0.1 1 10 Drain Current : ID [A] 8/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.30 Ta = 25ºC Pulsed 0.35 Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.40 ID= 16A 0.30 0.25 ID= 7.6A 0.20 0.15 0.10 ID= -7.6A 0.05 0.00 8 10 12 14 16 18 20 0.24 ID= 16A 0.18 ID= 7.6A 0.12 ID= -7.6A 0.06 0.00 22 VGS = 18V Pulsed -50 Gate - Source Voltage : VGS [V] 1 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] 200 1.03 1.02 1.01 1.00 0.99 0.98 100 Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 150 1.04 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 10 100 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 0.1 0.01 50 Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 VGS = 18V Pulsed 0 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] 9/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 20 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] 10000 Ciss 1000 Coss 100 Crss 10 1 Ta = 25ºC f = 1MHz VGS = 0V 0.1 1 10 100 Ta = 25ºC 15 10 5 0 1000 Drain - Source Voltage : VDS [V] 0 200 400 600 800 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Ta = 25ºC VDD = 600V ID = 7.6A Pulsed 15 10 5 0 0 10 20 30 40 50 60 Total Gate Charge : Qg [nC] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lElectrical characteristic curves Fig.22 Typical Switching Time 　　　　　vs. External Gate Resistance Fig.23 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 300 Ta = VDD= VGS= ID = L= 60 25°C 600V +18V/0V 7.6A 750μH Switching Energy : E [µJ] Switching Time : t [ns] 80 td(off) tr 40 tf 20 td(on) 0 0 10 20 250 200 Eon 100 50 Eoff 300 External Gate Resistance : RG [Ω] 400 500 600 800 900 Fig.25 Typical Switching Loss 　　　　　vs. External Gate Resistance 600 Ta = VDD= VGS= RG = L= 400 25°C 600V +18V/0V 0Ω 750μH Switching Energy : E [µJ] 600 Eon 200 Ta = ID = VDD= VGS= L= 400 25°C 7.6A 600V +18V/0V 750μH Eon 200 Eoff 0 700 Drain - Source Voltage : VDS [V] Fig.24 Typical Switching Loss 　　　　　vs. Drain Current Switching Energy : E [µJ] 25°C 7.6A +18V/0V 0Ω 750μH 150 0 30 Ta = ID = VGS= RG = L= 0 5 10 15 20 25 Eoff 0 30 Drain Current : ID [A] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 5 10 15 20 25 30 External Gate Resistance : RG [Ω] 11/12 TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 SCT3105KR Datasheet lMeasurement circuits and waveforms Fig.1-1 Gate Charge Measurement Circuit Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time Fig.2-3 Waveforms for Switching Energy Loss Eon = ID ∙ VDS dt VDS Irr Eoff = ID ∙ VDS dt Vsurge ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 12/12 Fig.3-2 Reverse Recovery Waveform TSQ50254-SCT3105KR 31.Jul.2019 - Rev.001 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. 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