SCT3160KLHRC11

SCT3160KLHR Datasheet Automotive Grade N-channel SiC power MOSFET lOutline VDSS 1200V RDS(on) (Typ.) 160mΩ *1 TO-247N 17A ID PD 103W (1)(2)(3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Qualified to AEC-Q101 2) Low on-resistance *Body Diode 3) Fast switching speed 4) Fast reverse recovery Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications lApplication Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Tube Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT3160KL lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified) Parameter Symbol Value Unit VDSS 1200 V Tc = 25°C ID *1 17 A Tc = 100°C ID *1 12 A 42 A -4 to +22 V -4 to +26 V Drain - Source Voltage Continuous Drain current Pulsed Drain current (Tc = 25°C) ID,pulse *2 VGSS Gate - Source voltage (DC) *3 Gate - Source surge voltage (tsurge < 300nsec) VGSS_surge Recommended drive voltage VGS_op*4 0 / +18 V Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. V(BR)DSS Tvj = 25°C 1200 - - Tvj = -55°C 1200 - - Tvj = 25°C - 1 10 Tvj = 150°C - 2 - VGS = 0V, ID = 1mA Drain - Source breakdown voltage V VGS = 0V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +22V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.7 - 5.6 V - 160 208 mΩ Tvj = 150°C - 272 - f = 1MHz, open drain - 18 - , VDS = 0V VGS (th) VDS = 10V, ID = 2.5mA Gate threshold voltage VGS = 18V, ID = 5A Static Drain - Source on - state resistance RDS(on) *5 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 1.12 1.46 K/W lTypical Transient Thermal Characteristics Symbol Value Rth1 1.11E-01 Rth2 7.09E-01 Rth3 3.01E-01 Unit K/W Tj PD Value Cth1 8.73E-04 Cth2 5.10E-03 Cth3 2.94E-02 Rth,n Rth1 Cth1 Symbol Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 5A - 2.5 - Input capacitance Ciss VGS = 0V - 398 - Output capacitance Coss VDS = 800V - 41 - Reverse transfer capacitance Crss f = 1MHz - 18 - Effective output capacitance, energy related Co(er) - 45 - Total Gate charge Qg *5 - 42 - - 10 - - 22 - - 14 - - 18 - VGS = 0V VDS = 0V to 600V VDS = 600V S pF pF ID = 5A *5 Gate - Source charge Qgs Gate - Drain charge Qgd *5 Turn - on delay time td(on) *5 VGS = 18V See Fig. 1-1. VDS = 400V nC ID = 5A Rise time Turn - off delay time tr *5 td(off) VGS = 0V/+18V *5 RG = 0Ω ns - 24 - - 25 - - 62 - RL = 80Ω Fall time tf *5 See Fig. 1-1, 1-2. VDS = 600V Turn - on switching loss Eon *5 VGS=0V/18V, ID = 5A RG = 0Ω, L = 750μH Turn - off switching loss www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Eoff *5 Eon includes diode reverse recovery Lσ = 50nH, Cσ = 200pF See Fig. 2-1, 2-2. 3/15 μJ - 12 - TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Body diode continuous, forward current Conditions IS *1 Unit Min. Typ. Max. - - 17 A - - 42 A Tc = 25°C Body diode direct current, pulsed ISM Forward voltage VSD *5 VGS = 0V, IS = 5A - 3.2 - V IF = 5A - 13 - ns di/dt = 1100A/μs - 26 - nC Lσ = 50nH, Cσ = 200pF See Fig. 3-1, 3-2. - 4 - A Reverse recovery time *2 trr *5 VR = 600V *5 Reverse recovery charge Qrr Peak reverse recovery current Irrm *5 *1 Limited by maximum Tvj and for Max. RthJC. *2 PW  10μs, Duty cycle  1% *3 Example of acceptable VGS waveform Please note especially when using driver source that VGSS_surge must be in the range of absolute maximum rating. *4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause thermal runaway. *5 Pulsed www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 120 100 Drain Current : ID [A] Power Dissipation : PD [W] Operation in this area is limited by R DS(on) 80 60 40 10 PW = 1μs* PW = 10μs* PW = 100μs 1 20 PW = 1ms PW = 10ms Tc = 25ºC Single Pulse *Calculation(PW10μs) 0 0.1 25 75 125 175 0.1 Case Temperature : TC [°C] 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width Transient Thermal Impedance : ZthJC [K/W] 10 1 0.1 0.01 0.001 Tc = 25ºC Single Pulse 0.0001 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 1E+1 Pulse Width : PW [s] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 10 20 20V 18 18V 14 16V Tvj = 25ºC Pulsed 12 10 12V 8 6 10V 4 2 Tvj = 25ºC Pulsed 18V 8 Drain Current : ID [A] Drain Current : ID [A] 16 20V 9 14V 16V 7 14V 6 12V 5 4 10V 3 2 VGS= 8V 1 VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tvj = 25ºC 3rd Quadrant Characteristics 0 Tvj = 25ºC Pulsed -2 Drain Current : ID [A] -4 VGS = -4V VGS = -2V VGS = 0V VGS = 18V -6 -8 -10 -12 -14 -16 -18 -20 -10 -8 -6 -4 -2 0 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.7 Tvj = 150ºC Typical Output Characteristics(I) Fig.8 Tvj = 150ºC Typical Output Characteristics(II) 20 10 20V 18 20V 9 18V 8 16V 12V 14 12 Tvj = 150ºC Pulsed 10 8 10V 6 12V 16V 7 6 10V 5 4 VGS= 8V 3 2 4 2 Tvj = 150ºC Pulsed 1 VGS= 8V 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.9 Tvj = 150ºC 3rd Quadrant Characteristics Fig.10 Body Diode Forward Voltage 　　　 vs. Gate - Source Voltage 0 Body Diode Forward Voltage : VSD [V] 6 Tvj = 150ºC Pulsed -2 -4 Drain Current : ID [A] 14V 18V Drain Current : ID [A] 16 Drain Current : ID [A] 14V VGS = -4V VGS = -2V VGS = 0V VGS = 18V -6 -8 -10 -12 -14 -16 -18 -20 ID=5A 5 4 3 2 Tvj= 150ºC 1 Tvj= 25ºC 0 -10 -8 -6 -4 -2 0 -4 Drain - Source Voltage : VDS [V] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 0 4 8 12 16 20 Gate - Source Voltage : VGS [V] 7/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II) 100 20 VDS = 10V Pulsed 18 16 10 Drain Current : ID [A] Drain Current : ID [A] VDS = 10V Pulsed 1 Tvj= Tvj= Tvj= Tvj= 0.1 150ºC 75ºC 25ºC -25ºC 14 12 10 Tvj= Tvj= Tvj= Tvj= 8 6 4 150ºC 75ºC 25ºC -25ºC 2 0 0.01 0 2 4 6 0 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 10 6 VDS = 10V Pulsed VDS = 10V ID = 2.5mA 5 Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 2 4 3 2 1 0 1 Tvj = 150ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 0.1 -50 0 50 100 150 200 0.1 Junction Temperature : Tvj [ºC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 1 10 Drain Current : ID [A] 8/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.15 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.48 Tvj = 25ºC Pulsed 0.42 0.36 0.42 VGS = 18V Pulsed Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.48 0.36 ID= 11A ID= 11A 0.30 0.30 ID= 5A ID= 5A 0.24 0.24 ID= -5A 0.18 0.18 ID= -5A 0.12 0.12 0.06 0.06 0.00 0.00 8 10 12 14 16 18 20 -50 22 Gate - Source Voltage : VGS [V] 100 150 200 Fig.18 Normalized Drain - Source Breakdown Voltage vs. Junction Temperature 1.04 Normalized Drain - Source Breakdown Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] Tvj = 150ºC Tvj = 125ºC Tvj = 75ºC Tvj = 25ºC Tvj = -25ºC 50 Junction Temperature : Tvj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 0.1 0 VGS = 18V Pulsed 0.01 VGS = 18V Pulsed 1.03 1.02 1.01 1.00 0.99 0.98 1 10 100 Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 -50 0 50 100 150 200 Junction Temperature : Tvj [ºC] 9/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.19 Typical Capacitance 　　　　　vs. Drain - Source Voltage Fig.20 Coss Stored Energy 16 10000 1000 Coss Stored Energy : EOSS [µJ] Capacitance : C [pF] Tvj = 25ºC Ciss 100 Coss Crss 10 Tvj = 25ºC f = 1MHz VGS = 0V 1 14 12 10 8 6 4 2 0 0.1 1 10 100 1000 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics *Gate Charge Waveform Gate - Source Voltage : VGS [V] 20 Tvj = 25ºC VDD = 600V ID =5A Pulsed 15 10 5 0 0 10 20 30 40 50 Total Gate Charge : Qg [nC] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 10/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lElectrical characteristic curves Fig.19 Typical Switching Time 　　　　　vs. Drain Current Fig.20 Typical Switching Loss 　　　　　vs. Drain - Source Voltage 10000 140 Switching Time : t [ns] 1000 Switching Energy : E [µJ] Tvj = 25°C VDD= 400V VGS= +18V/0V RG = 0Ω tf 100 td(off) 10 td(on) tr 120 Tvj = ID = VGS= RG = 25°C 5A +18V/0V 0Ω 100 L= 750μH 80 Eon 60 40 Eoff 20 0 1 0.1 1 10 200 100 Drain Current : ID [A] 600 800 1000 Drain - Source Voltage : VDS [V] Fig.21 Typical Switching Loss 　　　　　vs. Drain Current Fig.22 Typical Switching Loss 　　　　　vs. External Gate Resistance 560 560 480 Tvj = VDD= VGS= RG = 25°C 600V +18V/0V 0Ω 400 L= 750μH Switching Energy : E [µJ] Switching Energy : E [µJ] 400 320 240 Eon 160 480 Tvj = 25°C ID = 5A VDD= 600V VGS= +18V/0V 400 L= 750μH 320 240 160 Eon 80 80 Eoff Eoff 0 0 0 2 4 6 0 8 10 12 14 16 18 20 10 15 20 25 30 External Gate Resistance : RG [Ω] Drain Current : ID [A] www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 11/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lMeasurement circuits and waveforms Fig.1-1 Gate Charge and Switching Time Measurement Circuit Fig.1-2 Waveforms for Switching Time Fig.2-1 Switching Energy Measurement Circuit Fig.2-2 Waveforms for Switching Energy Loss Eon = ‫ ׬‬ID ∙ VDS dt VDS Eoff = ‫ ׬‬ID ∙ VDS dt Vsurge Irr ID Fig.3-1 Reverse Recovery Time Measurement Circuit www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Fig.3-2 Reverse Recovery Waveform 12/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lPackage Dimensions Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 13/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 14/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Datasheet SCT3160KLHR lDie Bonding Layout : Die position ・Front view of the packaging. ・Dimensions are design values. ・If the heat sink is to be installed, it should be in contact with the die bonding point. Unit: mm www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/15 TSQ50211-SCT3160KLHR 13.Nov.2022 - Rev.002 Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. 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Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. R1107 S Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001