SCT3160KW7
Datasheet
N-channel SiC power MOSFET
lOutline
VDSS
RDS(on) (Typ.)
ID*1
PD
1200V
160mΩ
17A
100W
TO-263-7L
lInner circuit
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
Please note Driver Source and Power Source are
not exchangeable. Their exchange might lead to
malfunction.
lPackaging specifications
lApplication
Packing
・Solar inverters
Reel size (mm)
330
Tape width (mm)
24
・DC/DC converters
Type
・Switch mode power supplies
Embossed tape
Basic ordering unit (pcs)
・Induction heating
Taping code
・Motor drives
Marking
1000
TL
SCT3160KW7
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source Voltage
Continuous Drain current
Value
Unit
VDSS
1200
V
Tc = 25°C
ID
*1
17
A
Tc = 100°C
ID
*1
12
A
42
A
-4 to +22
V
-4 to +26
V
0 / +18
V
Tj
175
°C
Tstg
-55 to +175
°C
ID,pulse *2
Pulsed Drain current
VGSS
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge < 300ns)
VGSS_surge
Recommended drive voltage
VGS_op
Junction temperature
Range of storage temperature
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TSQ50252-SCT3160KW7
4.Aug.2020 - Rev.001
Datasheet
SCT3160KW7
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Values
Conditions
Min.
Typ.
Max.
V(BR)DSS Tj = 25°C
1200
-
-
Tj = -55°C
1200
-
-
Tj = 25°C
-
1
10
Tj = 150°C
-
2
-
Unit
VGS = 0V, ID = 1mA
Drain - Source breakdown
voltage
V
VGS = 0V, VDS =1200V
Zero Gate voltage
Drain current
IDSS
μA
Gate - Source
leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source
leakage current
IGSS-
VGS = -4V,
-
-
-100
nA
2.7
-
5.6
V
-
160
208
mΩ
Tj = 150°C
-
272
-
f = 1MHz, open drain
-
18
-
VDS = 0V
VGS (th) VDS = 10V, ID = 2.5mA
Gate threshold voltage
VGS = 18V, ID = 5A
Static Drain - Source
on - state resistance
RDS(on) *5 Tj = 25°C
RG
Gate input resistance
Ω
lThermal resistance
Parameter
Symbol
RthJC
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
-
1.17
1.5
Unit
°C/W
lTypical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
1.56×10
-1
Rth2
3.81×10
-1
Rth3
5.29×10
-1
K/W
Tj
PD
Symbol
Cth2
Unit
Cth1
3.73×10
-4
Cth2
3.26×10
-3
Cth3
2.75×10
-3
Rth,n
Rth1
Cth1
Value
Ws/K
Tc
Cth,n
Ta
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Datasheet
SCT3160KW7
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *5
VDS = 10V, ID = 5A
-
2.5
-
Input capacitance
Ciss
VGS = 0V
-
398
-
Output capacitance
Coss
VDS = 800V
-
41
-
Reverse transfer capacitance
Crss
f = 1MHz
-
18
-
Effective output capacitance,
energy related
Co(er)
-
45
-
Total Gate charge
Qg *5
-
42
-
-
10
-
-
22
-
-
3
-
-
9
-
VGS = 0V
VDS = 0V to 600V
VDS = 600V
Unit
S
pF
pF
ID = 5A
*5
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *5
Turn - on delay time
td(on) *5
VGS = 18V
See Fig. 1-1.
VDS = 600V
nC
ID = 5A
Rise time
Turn - off delay time
Fall time
tr
*5
VGS = 0V/+18V
td(off)
tf
*5
*5
Turn - on switching loss
Eon *5
Turn - off switching loss
*5
RG = 0Ω, L = 750μH
Eon includes diode
reverse recovery
Lσ = 50nH, Cσ = 10pF
See Fig. 2-1, 2-2, 2-3.
ns
-
14
-
-
9
-
-
75
μJ
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Eoff
-
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TSQ50252-SCT3160KW7
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Datasheet
SCT3160KW7
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Body diode continuous,
forward current
IS *1
Body diode direct current,
pulsed
ISM *2
Forward voltage
VSD *5
Reverse recovery time
Conditions
Values
Unit
Min.
Typ.
Max.
-
-
17
A
-
-
42
A
-
3.2
-
V
-
11
-
ns
di/dt = 2500A/μs
-
108
-
nC
Lσ = 50nH, Cσ = 10pF
See Fig. 3-1, 3-2.
-
20
-
A
Tc = 25°C
trr *5
VGS = 0V, ID = 5A
IF = 5A
VR = 600V
*5
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *5
*1 Limited by maximum temperature allowed.
*2 PW 10μs, Duty cycle 1%
*3 Example of acceptable VGS waveform
Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.
*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.
*5 Pulsed
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Datasheet
SCT3160KW7
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
120
100
Drain Current : ID [A]
Power Dissipation : PD [W]
Operation in this area is limited by RDS(on)
80
60
40
10
PW = 1μs*
PW = 10μs*
PW = 100μs
1
20
PW = 1ms
PW = 10ms
Ta = 25ºC
Single Pulse
*Calculation(PW10μs)
0
0.1
25
75
125
175
0.1
Case Temperature : TC [°C]
1
10
100
1000 10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance :
ZthJC [K/W]
10
1
0.1
0.01
0.001
Ta = 25ºC
Single Pulse
0.0001
0.000001
0.0001
0.01
1
100
Pulse Width : PW [s]
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SCT3160KW7
lElectrical characteristic curves
Fig.4 Typical Output Characteristics(I)
Fig.5 Typical Output Characteristics(II)
10
20
20V
18
18V
14
16V
Ta = 25ºC
Pulsed
12
10
12V
8
6
10V
4
2
Ta = 25ºC
Pulsed
18V
8
Drain Current : ID [A]
Drain Current : ID [A]
16
20V
9
14V
16V
7
14V
6
12V
5
4
10V
3
2
VGS= 8V
1
VGS= 8V
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.6 Tj = 25ºC 3rd Quadrant Characteristics
0
Ta = 25ºC
Pulsed
-2
Drain Current : ID [A]
-4
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-6
-8
-10
-12
-14
-16
-18
-20
-10
-8
-6
-4
-2
0
Drain - Source Voltage : VDS [V]
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SCT3160KW7
lElectrical characteristic curves
Fig.8 Tj = 150ºC Typical Output
Fig.7 Tj = 150ºC Typical Output
Characteristics(I)
20
20V
18
14V
20V
9
18V
12V
14
12
Ta = 150ºC
Pulsed
10
8
10V
6
12V
16V
7
6
10V
5
4
VGS= 8V
3
2
4
2
Ta = 150ºC
Pulsed
1
VGS= 8V
0
0
0
2
4
6
8
0
10
Drain - Source Voltage : VDS [V]
Body Diode Forward Voltage : VSD [V]
Ta = 150ºC
Pulsed
-4
VGS = -4V
VGS = -2V
VGS = 0V
VGS = 18V
-6
-8
2
3
4
-10
-12
-14
-16
-18
-20
6
ID=5A
5
4
3
2
Ta= 150ºC
1
Ta= 25ºC
0
-10
-8
-6
-4
-2
0
-4
Drain - Source Voltage : VDS [V]
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Fig.10 Body Diode Forward Voltage
vs. Gate - Source Voltage
0
-2
1
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
Drain Current : ID [A]
14V
18V
8
16V
Drain Current : ID [A]
16
Drain Current : ID [A]
Characteristics(II)
10
0
4
8
12
16
20
Gate - Source Voltage : VGS [V]
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SCT3160KW7
lElectrical characteristic curves
Fig.11 Typical Transfer Characteristics (I)
Fig.12 Typical Transfer Characteristics (II)
100
20
VDS = 10V
Pulsed
18
16
10
Drain Current : ID [A]
Drain Current : ID [A]
VDS = 10V
Pulsed
1
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
14
12
10
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
8
6
4
2
0
0.01
0
2
4
6
0
8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
4
6
8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Fig.14 Transconductance vs. Drain Current
10
6
VDS = 10V
Pulsed
VDS = 10V
ID = 2.5mA
5
Transconductance : gfs [S]
Gate Threshold Voltage : V GS(th) [V]
2
4
3
2
1
0
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
-50
0
50
100
150
200
0.1
Junction Temperature : Tj [ºC]
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Drain Current : ID [A]
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Datasheet
SCT3160KW7
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.48
Ta = 25ºC
Pulsed
0.42
0.36
0.42
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
0.48
VGS = 18V
Pulsed
0.36
ID= 11A
ID= 11A
0.30
0.30
ID= 5A
0.24
ID= 5A
0.24
0.18
0.18
ID= -5A
ID= -5A
0.12
0.12
0.06
0.06
0.00
0.00
8
10
12
14
16
18
20
-50
22
Gate - Source Voltage : VGS [V]
50
100
150
200
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
1
Fig.18 Normalized Drain - Source Breakdown
Voltage vs. Junction Temperature
1.04
Normalized Drain - Source
Breakdown Voltage
Static Drain - Source On-State
Resistance : RDS(on) [Ω]
0
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
VGS = 18V
Pulsed
0.01
VGS = 18V
Pulsed
1.03
1.02
1.01
1.00
0.99
0.98
1
10
100
Drain Current : ID [A]
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0
50
100
150
200
Junction Temperature : Tj [ºC]
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SCT3160KW7
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
Fig.20 Coss Stored Energy
16
10000
1000
Coss Stored Energy : EOSS [µJ]
Capacitance : C [pF]
Ta = 25ºC
Ciss
100
Coss
10
Crss
Ta = 25ºC
f = 1MHz
VGS = 0V
1
14
12
10
8
6
4
2
0
0.1
1
10
100
1000
0
Drain - Source Voltage : VDS [V]
100 200 300 400 500 600 700 800
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
*Gate Charge Waveform
Gate - Source Voltage : VGS [V]
20
Ta = 25ºC
VDD = 600V
ID =5A
Pulsed
15
10
5
0
0
10
20
30
40
50
Total Gate Charge : Qg [nC]
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lElectrical characteristic curves
Fig.22 Typical Switching Time
vs. External Gate Resistance
Fig.23 Typical Switching Loss
vs. Drain - Source Voltage
220
Ta =
VDD=
VGS=
ID =
L=
40
Ta =
ID =
VGS=
RG =
L=
200
25°C
600V
+18V/0V
5A
750μH
td(off)
Switching Energy : E [µJ]
Switching Time : t [ns]
60
tr
tf
20
180
160
140
120
Eon
100
80
60
40
Eoff
20
td(on)
0
0
0
10
20
300
30
External Gate Resistance : RG [Ω]
400
500
600
700
800
900
Drain - Source Voltage : VDS [V]
Fig.24 Typical Switching Loss
vs. Drain Current
Fig.25 Typical Switching Loss
vs. External Gate Resistance
200
200
Ta =
VDD=
VGS=
RG =
L=
160
25°C
600V
+18V/0V
0Ω
750μH
Switching Energy : E [µJ]
Switching Energy : E [µJ]
25°C
5A
+18V/0V
0Ω
750μH
120
Eon
80
40
Ta =
ID =
VDD=
VGS=
L=
160
25°C
5A
600V
+18V/0V
750μH
120
Eon
80
40
Eoff
Eoff
0
0
0
2
4
6
0
8 10 12 14 16 18 20
10
15
20
25
30
External Gate Resistance : RG [Ω]
Drain Current : ID [A]
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SCT3160KW7
lMeasurement circuits and waveforms
Fig.1-1 Gate Charge Measurement Circuit
Fig.2-1 Switching Characteristics Measurement Circuit
Fig.2-2 Waveforms for Switching Time
Fig.2-3 Waveforms for Switching Energy Loss
Eon = ID ∙ VDS dt
VDS
Irr
Eoff =
ID ∙ VDS dt
Vsurge
ID
Fig.3-1 Reverse Recovery Time Measurement Circuit
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Fig.3-2 Reverse Recovery Waveform
TSQ50252-SCT3160KW7
4.Aug.2020 - Rev.001
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications.
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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More detail product informations and catalogs are available, please contact us.
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R1107 S
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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