SCT4026DW7HRTL

SCT4026DW7HR Datasheet Automotive Grade N-channel SiC power MOSFET VDSS lOutline 750V 26mΩ RDS(on) (Typ.) *1 TO-263-7L 51A 150W ID PD ● Features lInner circuit 1) Qualified to AEC-Q101 (Tab) 2) Low on-resistance 3) Fast switching speed *1 (1) (2) 4) Fast reverse recovery (1) Gate (2) Driver Source (3)~(7) Power Source (Tab) Drain *1 Body Diode (3)~(7) 5) Easy to parallel Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications ● Application Packing ・Automobile Reel size (mm) 330 Tape width (mm) 24 ・Switch mode power supplies Embossed tape Type Basic ordering unit (pcs) 1000 Taping code TL Marking SCT4026DW7 lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.) Parameter Drain - source voltage Continuous drain and source current VGS = VGS_on Pulsed drain current VGS = VGS_on Body diode pulsed forward current Body diode surge forward current Tc = 25°C Tc = 100°C Symbol Value Unit VDSS 750 V 51 A 36 A ID, IS *1 Tc = 25°C ID,pulse *2 91 A Tc = 25°C VGS = 0 V IS,pulse *1,*3 51 A IS,pulse *1,*4 91 A VGSS_DC -4 to +21 V -4 to +23 V Gate - source voltage (DC) Gate - source surge voltage (tsurge < 300ns) VGSS_surge *5 Recommended turn-on gate - source drive voltage VGS_on *6 +15 to +18 V Recommended turn-off gate - source drive voltage VGS_off 0 V Virtual junction temperature Tvj 175 °C Range of storage temperature Tstg -40 to +175 °C www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50252-SCT4026DW7HR 23.Aug.2023 - Rev.004 Datasheet SCT4026DW7HR ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 750 - - Tvj = 25°C - 1 80 Tvj = 150°C - 10 - VGS = 0 V, ID = 9.2mA Tvj = 25°C V VGS = 0 V, VDS =750V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +21V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.8 - 4.8 V - 26 34 mΩ Tvj = 150°C - 44 - f = 1MHz, open drain - 1 - , VDS = 0V VGS(th) *7 VDS = 10V, ID = 15.4mA Gate threshold voltage VGS = 18V, ID = 29A Static Drain - Source on - state resistance RDS(on) *8 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC*9 Thermal resistance, junction - case Unit Min. Typ. Max. - 0.79 1.0 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 5.1 ×10 -2 Rth2 3.6 ×10 -1 Rth3 3.8 ×10 -1 K/W Tj PD Symbol Value Cth1 8.8 ×10 -4 Cth2 4.5 ×10 -3 Cth3 1.3 ×10 -1 Rth,n Rth1 Cth1 Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50252-SCT4026DW7HR 23.Aug.2023 - Rev.004 Datasheet SCT4026DW7HR ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 16 - Transconductance gfs *8 Input capacitance Ciss VGS = 0V - 2320 - Output capacitance Coss VDS = 500V - 111 - Reverse transfer capacitance Crss f = 1MHz - 9 - Effective output capacitance, energy related Co(er) - 143 - Total Gate charge Qg *8 - 94 - - 20 - - 23 - - 9.5 - - 22 - VDS = 10V, ID = 29A VGS = 0V VDS = 0V to 500V VDS = 500V S pF pF ID = 29A *8 Gate - Source charge Qgs Gate - Drain charge Qgd *8 Turn - on delay time td(on) *8 VGS = 18V See Fig. 1-1, 1-2. VDS = 500V nC ID = 29A Rise time tr Turn - off delay time *8 VGS = +18V / 0V td(off) *8 tf *8 Fall time Turn - on switching loss Eon *8 Turn - off switching loss *8 RG = 6.8Ω, L = 250μH Eon includes diode reverse recovery Lσ = 50nH, Cσ = 10pF See Fig. 2-1, 2-2, 2-3. ns - 45 - - 13 - - 213 - - 73 - - 12.0 - µs - 11.5 - µs μJ Eoff VDS ≤ 400V VGS(on) = +15V Short-circuit withstand time tsc *9 VGS(on) = +18V www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS,peak ≤ 750V Tvj(start) = 25°C RG = 2.2Ω 3/15 TSQ50252-SCT4026DW7HR 23.Aug.2023 - Rev.004 Datasheet SCT4026DW7HR lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol VSD *8 Forward voltage Reverse recovery time Conditions IF = 29A VR = 500V *8 Qrr Peak reverse recovery current Irrm *8 Typ. Max. - 3.3 - V - 12 - ns - 141 - nC - 24 - A VGS = 0V, IS = 29A trr *8 Reverse recovery charge Unit Min. 2700A/μs di/dt = Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. *1 Limited by maximum Tvj and for Max. RthJC. *2 Pulse width and duty cycle are limited by T vj,max. *3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5% *4 When used as a protective function, PW ≤ 10μs *5 Example of acceptable VGS waveform +VGSS_surge +VGSS_DC tsurge tsurge -VGSS_DC -VGSS_surge Please note especially when using driver source that V GSS_surge must be in the range of absolute maximum rating. *6 Please be advised not to use SiC-MOSFETs with V GS below 10V as doing so may cause thermal runaway. *7 Tested after applying VGS = 21V for 100ms. *8 Pulsed *9 The value is based on TO-247 package. Single Pulsed. *10 Measured conformable to JESD51-14. See the application note "rthjc_measurement_and_usage_an-e.pdf". Link URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50252-SCT4026DW7HR 23.Aug.2023 - Rev.004 Datasheet SCT4026DW7HR lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 1000 160 Operation in this area is limited by RDS(on) PW 120 Drain Current : ID [A] Power Dissipation : PD [W] 140 100 80 60 40 100