SCT4062KEHRC11

SCT4062KEHR Datasheet Automotive Grade N-channel SiC power MOSFET VDSS lOutline 1200V 62mΩ RDS(on) (Typ.) *1 TO-247N 26A 115W ID PD (3) (1)(2) ● Features lInner circuit 1) Qualified to AEC-Q101 (2) 2) Low on-resistance 3) Fast switching speed (1) Gate (2) Drain (3) Source *1 (1) *1 Body Diode 4) Fast reverse recovery 5) Easy to parallel (3) Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant lPackaging specifications ● Application Packing ・Automobile Reel size (mm) - Tape width (mm) - ・Switch mode power supplies Tube Type Basic ordering unit (pcs) 30 Taping code C11 Marking SCT4062KE lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.) Parameter Drain - source voltage Continuous drain and source current VGS = VGS_on Pulsed drain current VGS = VGS_on Body diode pulsed forward current Body diode surge forward current Tc = 25°C Tc = 100°C Symbol Value Unit VDSS 1200 V 26 A 18 A ID, IS *1 Tc = 25°C ID,pulse *2 52 A Tc = 25°C VGS = 0 V IS,pulse *1,*3 26 A IS,pulse *1,*4 52 A VGSS_DC -4 to +21 V -4 to +23 V Gate - source voltage (DC) Gate - source surge voltage (tsurge < 300ns) VGSS_surge *5 Recommended turn-on gate - source drive voltage VGS_on *6 +15 to +18 V Recommended turn-off gate - source drive voltage VGS_off 0 V Virtual junction temperature Tvj 175 °C Range of storage temperature Tstg -40 to +175 °C www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50211-SCT4062KEHR 23.Aug.2023 - Rev.003 Datasheet SCT4062KEHR ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - Tvj = 25°C - 1 80 Tvj = 150°C - 10 - VGS = 0 V, ID = 5.3mA Tvj = 25°C V VGS = 0 V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +21V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.8 - 4.8 V - 62 81 mΩ Tvj = 150°C - 124 - f = 1MHz, open drain - 4 - , VDS = 0V VGS(th) *7 VDS = 10V, ID = 6.45mA Gate threshold voltage VGS = 18V, ID = 12A Static Drain - Source on - state resistance RDS(on) *8 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC*9 Thermal resistance, junction - case Unit Min. Typ. Max. - 0.98 1.3 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 8.4 ×10 -2 Rth2 4.7 ×10 -1 Rth3 4.2 ×10 -1 K/W Tj PD Symbol Value Cth1 5.3 ×10 -4 Cth2 2.4 ×10 -3 Cth3 4.3 ×10 -2 Rth,n Rth1 Cth1 Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50211-SCT4062KEHR 23.Aug.2023 - Rev.003 Datasheet SCT4062KEHR ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 6.5 - Transconductance gfs *8 Input capacitance Ciss VGS = 0V - 1498 - Output capacitance Coss VDS = 800V - 45 - Reverse transfer capacitance Crss f = 1MHz - 3 - Effective output capacitance, energy related Co(er) - 54 - Total Gate charge Qg *8 - 64 - - 14 - - 17 - - 6 - - 20 - VDS = 10V, ID = 12A VGS = 0V VDS = 0V to 800V VDS = 800V S pF pF ID = 12A *8 Gate - Source charge Qgs Gate - Drain charge Qgd *8 Turn - on delay time td(on) *8 VGS = 18V See Fig. 1-1, 1-2. VDS = 800V nC ID = 12A Rise time tr Turn - off delay time *8 VGS = +18V / 0V td(off) *8 tf *8 Fall time Turn - on switching loss Eon *8 Turn - off switching loss *8 RG = 0Ω, L = 250μH Eon includes diode reverse recovery Lσ = 50nH, Cσ = 10pF See Fig. 2-1, 2-2, 2-3. ns - 25 - - 11 - - 250 - - 15 - - 4.5 - µs - 4.0 - µs μJ Eoff VDS ≤ 800V VGS(on) = +15V Short-circuit withstand time tsc *9 VGS(on) = +18V www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS,peak ≤ 1200V Tvj(start) = 25°C RG = 2.2Ω 3/15 TSQ50211-SCT4062KEHR 23.Aug.2023 - Rev.003 Datasheet SCT4062KEHR lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol VSD *8 Forward voltage Reverse recovery time Conditions IF = 12A VR = 800V *8 Qrr Peak reverse recovery current Irrm *8 Typ. Max. - 3.3 - V - 16 - ns - 82 - nC - 10 - A VGS = 0V, IS = 12A trr *8 Reverse recovery charge Unit Min. 2600A/μs di/dt = Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. *1 Limited by maximum Tvj and for Max. RthJC. *2 Pulse width and duty cycle are limited by T vj,max. *3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5% *4 When used as a protective function, PW ≤ 10μs *5 Example of acceptable VGS waveform +VGSS_surge +VGSS_DC tsurge tsurge -VGSS_DC -VGSS_surge Please note especially when using driver source that V GSS_surge must be in the range of absolute maximum rating. *6 Please be advised not to use SiC-MOSFETs with V GS below 10V as doing so may cause thermal runaway. *7 Tested after applying VGS = 21V for 100ms. *8 Pulsed *9 The value is based on TO-247 package. Single Pulsed. *10 Measured conformable to JESD51-14. See the application note "rthjc_measurement_and_usage_an-e.pdf". Link URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50211-SCT4062KEHR 23.Aug.2023 - Rev.003 Datasheet SCT4062KEHR lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 140 Operation in this area is limited by RDS(on) 100 PW Drain Current : ID [A] Power Dissipation : PD [W] 120 100 80 60 40