SCT4062KW7TL

SCT4062KW7 Datasheet N-channel SiC power MOSFET VDSS lOutline 1200V 62mΩ RDS(on) (Typ.) *1 TO-263-7L 24A 93W ID PD ● Features lInner circuit 1) Low on-resistance (Tab) 2) Fast switching speed 3) Fast reverse recovery *1 (1) (2) 4) Easy to parallel (1) Gate (2) Driver Source (3)~(7) Power Source (Tab) Drain *1 Body Diode (3)~(7) 5) Simple to drive Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications ● Application Packing ・Solar inverters Reel size (mm) 330 Tape width (mm) 24 ・DC/DC converters Embossed tape Type ・Switch mode power supplies Basic ordering unit (pcs) ・Induction heating 1000 Taping code TL Marking SCT4062KW7 lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.) Parameter Drain - source voltage Continuous drain and source current VGS = VGS_on Pulsed drain current VGS = VGS_on Body diode pulsed forward current Body diode surge forward current Tc = 25°C Tc = 100°C Symbol Value Unit VDSS 1200 V 24 A 17 A ID, IS *1 Tc = 25°C ID,pulse *2 52 A Tc = 25°C VGS = 0 V IS,pulse *1,*3 24 A IS,pulse *1,*4 52 A VGSS_DC -4 to +21 V -4 to +23 V Gate - source voltage (DC) Gate - source surge voltage (tsurge < 300ns) VGSS_surge *5 Recommended turn-on gate - source drive voltage VGS_on *6 +15 to +18 V Recommended turn-off gate - source drive voltage VGS_off 0 V Virtual junction temperature Tvj 175 °C Range of storage temperature Tstg -40 to +175 °C www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/15 TSQ50252-SCT4062KW7 23.Aug.2023 - Rev.004 Datasheet SCT4062KW7 ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Drain - Source breakdown voltage V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - Tvj = 25°C - 1 80 Tvj = 150°C - 10 - VGS = 0 V, ID = 5.3mA Tvj = 25°C V VGS = 0 V, VDS =1200V Zero Gate voltage Drain current IDSS μA Gate - Source leakage current IGSS+ VGS = +21V , VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V - - -100 nA 2.8 - 4.8 V - 62 81 mΩ Tvj = 150°C - 124 - f = 1MHz, open drain - 4 - , VDS = 0V VGS(th) *7 VDS = 10V, ID = 6.45mA Gate threshold voltage VGS = 18V, ID = 12A Static Drain - Source on - state resistance RDS(on) *8 Tvj = 25°C RG Gate input resistance Ω lThermal resistance Values Parameter Symbol RthJC*9 Thermal resistance, junction - case Unit Min. Typ. Max. - 1.2 1.6 K/W lTypical Transient Thermal Characteristics Symbol Value Unit Rth1 8.9 ×10 -2 Rth2 5.7 ×10 -1 Rth3 5.3 ×10 -1 K/W Tj PD Symbol Value Cth1 5.3 ×10 -4 Cth2 2.8 ×10 -3 Cth3 1.5 ×10 -1 Rth,n Rth1 Cth1 Cth2 Unit Ws/K Tc Cth,n Ta www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/15 TSQ50252-SCT4062KW7 23.Aug.2023 - Rev.004 Datasheet SCT4062KW7 ●Electrical characteristics (Tvj = 25°C unless otherwise specified) Values Parameter Symbol Conditions Unit Min. Typ. Max. - 6.5 - Transconductance gfs *8 Input capacitance Ciss VGS = 0V - 1498 - Output capacitance Coss VDS = 800V - 45 - Reverse transfer capacitance Crss f = 1MHz - 3 - Effective output capacitance, energy related Co(er) - 54 - Total Gate charge Qg *8 - 64 - - 14 - - 17 - - 4.4 - - 11 - VDS = 10V, ID = 12A VGS = 0V VDS = 0V to 800V VDS = 800V S pF pF ID = 12A *8 Gate - Source charge Qgs Gate - Drain charge Qgd *8 Turn - on delay time td(on) *8 VGS = 18V See Fig. 1-1, 1-2. VDS = 800V nC ID = 12A Rise time tr Turn - off delay time *8 VGS = +18V / 0V td(off) *8 tf *8 Fall time Turn - on switching loss Eon *8 Turn - off switching loss *8 RG = 0Ω, L = 250μH Eon includes diode reverse recovery Lσ = 50nH, Cσ = 10pF See Fig. 2-1, 2-2, 2-3. ns - 22 - - 10 - - 132 - - 6 - - 4.5 - µs - 4.0 - µs μJ Eoff VDS ≤ 800V VGS(on) = +15V Short-circuit withstand time tsc *9 VGS(on) = +18V www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 VDS,peak ≤ 1200V Tvj(start) = 25°C RG = 2.2Ω 3/15 TSQ50252-SCT4062KW7 23.Aug.2023 - Rev.004 Datasheet SCT4062KW7 lBody diode electrical characteristics (Source-Drain) (Tvj = 25°C unless otherwise specified) Values Parameter Symbol VSD *8 Forward voltage Reverse recovery time Conditions IF = 12A VR = 800V *8 Qrr Peak reverse recovery current Irrm *8 Typ. Max. - 3.3 - V - 8.1 - ns - 105 - nC - 26 - A VGS = 0V, IS = 12A trr *8 Reverse recovery charge Unit Min. 3800A/μs di/dt = Lσ = 50nH, Cσ = 10pF See Fig. 3-1, 3-2. *1 Limited by maximum Tvj and for Max. RthJC. *2 Pulse width and duty cycle are limited by T vj,max. *3 Only for body-diode, Repititive pulse, PW ≤ 1.5μs, Duty cycle ≤ 5% *4 When used as a protective function, PW ≤ 10μs *5 Example of acceptable VGS waveform +VGSS_surge +VGSS_DC tsurge tsurge -VGSS_DC -VGSS_surge Please note especially when using driver source that V GSS_surge must be in the range of absolute maximum rating. *6 Please be advised not to use SiC-MOSFETs with V GS below 10V as doing so may cause thermal runaway. *7 Tested after applying VGS = 21V for 100ms. *8 Pulsed *9 The value is based on TO-247 package. Single Pulsed. *10 Measured conformable to JESD51-14. See the application note "rthjc_measurement_and_usage_an-e.pdf". Link URL: https://fscdn.rohm.com/en/products/databook/applinote/discrete/common/rthjc_measurement_and_usage_an-e.pdf www.rohm.com ©2023 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/15 TSQ50252-SCT4062KW7 23.Aug.2023 - Rev.004 Datasheet SCT4062KW7 lElectrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 100 100 Operation in this area is limited by R DS(on) PW 80 Drain Current : ID [A] Power Dissipation : PD [W] 90 70 60 50 40 30