SH8J65TB1

4V Drive Pch+Pch MOSFET SH8J65 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Packaging specifications Package Type Inner circuit (8) Taping (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SH8J65 ∗2 ∗2 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Total power dissipation Channel temperature Range of Storage temperature PD Tch Tstg ∗1 ∗1 ∗2 Limits −30 ±20 ±7.0 ±28 −1.6 −28 2.0 1.4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1/5 2011.10 - Rev.B SH8J65 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ RDS (on) − resistance − Forward transfer admittance Yfs ∗ 6.0 Input capacitance Ciss − Coss Output capacitance − Reverse transfer capacitance − Crss td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − Fall time − tf ∗ Total gate charge − Qg ∗ − Gate-source charge Qgs ∗ − Qgd ∗ Gate-drain charge − − − − 21.5 29.0 31.0 − 1200 170 170 12 40 80 65 18 3.5 6.5 ±10 − −1 −2.5 29.0 39.0 40.8 − − − − − − − − − − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7A, VGS= −10V ID= −3.5A, VGS= −4.5V ID= −3.5A, VGS= −4.0V VDS= −10V, ID= −7A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −3.5A VGS= −10V RL=4.3Ω RG=10Ω VDD −15V ID= −7A VGS= −5V RL=2.1Ω / RG=10Ω ∗ ∗ ∗ ∗Pulsed Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −7A, VGS=0V ∗Pulsed www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 2/5 2011.10 - Rev.B SH8J65 Data Sheet Electrical characteristic curves VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V 14 12 10 8 6 VGS= -3.0V 4 VGS= -2.5V 16 14 VGS= -10V VGS= -4.0V VGS= -3.0V 12 10 8 VGS= -2.5V 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 0.1 2 4 6 8 1.0 10 1.5 2.0 2.5 3.0 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics 100 VGS= -4.0V VGS= -4.5V VGS= -10V 1 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 1 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1 1 10 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 1 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : -ID[A] VDS= -10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C VGS= -4.5V Pulsed 10 100 VGS= -4.0V Pulsed 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10 100 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.01 0 100 100 VDS= -10V Pulsed VGS= -2.2V 2 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 18 REVERSE DRAIN CURRENT : -Is [A] DRAIN CURRENT : -ID[A] 16 10 20 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed 18 DRAIN CURRENT : -ID[A] 20 0.1 1.0 10.0 VGS=0V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 DRAIN-CURRENT : -ID[A] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 2011.10 - Rev.B SH8J65 Data Sheet ID = -7.0A 60 ID = -3.5A 50 40 30 Ta=25°C VDD = -15V VGS=-10V RG=10Ω Pulsed td(off) 1000 tf GATE-SOURCE VOLTAGE : -VGS [V] 80 70 10 10000 Ta=25°C Pulsed 90 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 100 10 20 td(on) tr 10 5 10 15 0.01 0.1 GATE-SOURCE VOLTAGE : -VGS[V] 1 10 DRAIN-CURRENT : -ID [A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C VDD = -15V ID = -7.0A RG=10Ω Pulsed 4 2 0 10 20 30 40 TOTAL GATE CHARGE : Qg [nC] Fig.11 Switching Characteristics 10000 6 0 1 0 8 Fig.12 Dynamic Input Characteristics 1000 Operation in this area is limited by RDS(ON) DRAIN CURRENT : -ID (A) CAPACITANCE : C [pF] (V GS=-10V) Ciss 1000 Crss 100 Coss Ta=25°C f=1MHz VGS=0V 100 PW =100us 10 PW =1ms 1 PW = 10ms 0.1 Ta = 25°C DC Single Pulse operation MOUNTED ON SERAMIC BOARD 10 0.01 0.1 1 10 100 0.01 0.1 1 GATE-SOURCE VOLTAGE : -VDS[V] 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera 10 RESISTANCE : r (t) NORMARIZED TRANSIENT THERMAL 10 1 0.1 T a = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) 0.01 Rth(ch-a) = 89.3 °C/W 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ 4/5 2011.10 - Rev.B SH8J65 Data Sheet Measurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% RL D.U.T. 50% 10% 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.16 Switching Time Test Circuit tf toff Fig.17 Switching Time Waveforms VG VGS ID VDS Qg RL VGS IG(Const.) D.U.T. Qgs RG Qgd VDD Charge Fig.18 Gate Charge Test Circuit www.rohm.com c 2011 ROHM Co., Ltd. All rights reserved. ○ Fig.19 Gate Charge Waveform 5/5 2011.10 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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