SH8J65_11

4V Drive Pch+Pch MOSFET SH8J65 Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8J65 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board ∗1 ∗1 (2) (3) (4) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits −30 ±20 ±7.0 ±28 −1.6 −28 2.0 1.4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C (1) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.B SH8J65 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. − − − − 21.5 29.0 31.0 − 1200 170 170 12 40 80 65 18 3.5 6.5 Max. ±10 − −1 −2.5 29.0 39.0 40.8 − − − − − − − − − − − Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ RDS (on) − resistance − Yfs ∗ 6.0 Forward transfer admittance Input capacitance Ciss − Output capacitance − Coss Crss Reverse transfer capacitance − − Turn-on delay time td (on) ∗ tr ∗ − Rise time Turn-off delay time − td (off) ∗ tf ∗ Fall time − Total gate charge − Qg ∗ Gate-source charge Qgs ∗ − Qgd ∗ Gate-drain charge − ∗Pulsed Data Sheet Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7A, VGS= −10V ID= −3.5A, VGS= −4.5V ID= −3.5A, VGS= −4.0V VDS= −10V, ID= −7A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −3.5A VGS= −10V RL=4.3Ω RG=10Ω VDD −15V ID= −7A VGS= −5V RL=2.1Ω / RG=10Ω ∗ ∗ ∗ Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −7A, VGS=0V www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.B SH8J65 Electrical characteristic curves 20 18 DRAIN CURRENT : -ID[A] 16 14 12 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -3.5V Data Sheet 20 18 DRAIN CURRENT : -ID[A] 16 14 12 10 8 6 4 2 0 0 2 4 6 10 Ta=25°C Pulsed VGS= -10V VGS= -4.0V VGS= -3.0V VGS= -2.5V VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C DRAIN CURRENT : -ID[A] 1 VGS= -3.0V VGS= -2.5V 0.1 VGS= -2.2V 8 10 0.01 1.0 1.5 2.0 2.5 3.0 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics(Ⅰ) DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics(Ⅱ) GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed 100 VGS= -10V Pulsed 100 VGS= -4.5V Pulsed 10 VGS= -4.0V VGS= -4.5V VGS= -10V 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 10 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 10 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 REVERSE DRAIN CURRENT : -Is [A] VGS= -4.0V Pulsed 100 100 VDS= -10V Pulsed VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 0 0.1 1.0 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current 10.0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.B SH8J65 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 90 80 70 60 50 40 30 20 10 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics ID = -7.0A ID = -3.5A 10000 10 GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD = -15V VGS=-10V RG=10Ω Pulsed Data Sheet Ta=25°C Pulsed SWITCHING TIME : t [ns] 1000 td(off) tf 8 6 100 4 10 tr td(on) 2 Ta=25°C VDD = -15V ID = -7.0A RG=10Ω Pulsed 0 0 10 20 30 40 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 1000 Operation in this area is limited by RDS(ON) (V GS=-10V) CAPACITANCE : C [pF] Ciss 1000 DRAIN CURRENT : -ID ( A) 100 PW =100us 10 PW =1ms Crss 100 Coss Ta=25°C f=1MHz VGS=0V 1 PW = 10ms 0.1 Ta = 25°C Single Pulse DC operation 10 0.01 0.1 1 10 100 0.01 0.1 MOUNTED ON SERAMIC BOARD 1 10 100 GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL 10 RESISTANCE : r (t) 1 0.1 T a = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 0.01 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.B SH8J65 Measurement circuits Pulse Width Data Sheet VGS ID RL VDS VGS 10% 50% 10% 90% 50% 10% 90% RG D.U.T. VDD VDS 90% td(on) ton tr td(off) toff tf Fig.16 Switching Time Test Circuit Fig.17 Switching Time Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.18 Gate Charge Test Circuit Fig.19 Gate Charge Waveform www.rohm.com c ○ 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A