SH8J66

4V Drive Pch+Pch MOSFET SH8J66 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Applications Switching Each lead has same dimensions Packaging specifications Package Type SH8J66 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board ∗1 ∗1 (1) (2) (3) (4) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Tch Tstg ∗2 Limits −30 ±20 ±9 ±36 −1.6 −36 2.0 1.4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.01 - Rev.A SH8J66 Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. − − − − 13.5 17.5 19.0 − 3000 400 400 20 60 170 100 35 9 12 Max. ±10 − −1 −2.5 18.5 23.6 24.7 − − − − − − − − − − − Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ − RDS (on) resistance − Yfs ∗ 11 Forward transfer admittance Input capacitance Ciss − Output capacitance − Coss Crss Reverse transfer capacitance − − Turn-on delay time td (on) ∗ tr ∗ − Rise time Turn-off delay time − td (off) ∗ tf ∗ Fall time − Qg ∗ Total gate charge − Gate-source charge Qgs ∗ − Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −9A, VGS= −10V ID= −4.5A, VGS= −4.5V ID= −4.5A, VGS= −4.0V VDS= −10V, ID= −9A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −4.5A VGS= −10V RL=3.3Ω RG=10Ω VDD −15V ID= −9A VGS= −5V RL=1.7Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −9A, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.01 - Rev.A SH8J66 Electrical characteristic curves 20 18 DRAIN CURRENT : -ID [A] 16 14 12 10 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(  ) VGS= -2.5V VGS= -3.5V VGS= -3.0V VGS= -10V VGS= -4.5V VGS= -4.0V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical output characteristics(   ) VGS= -2.2V 0.01 1.0 VGS= -2.5V VGS= -10V VGS= -4.0V VGS= -3.0V Ta=25°C Pulsed DRAIN CURRENT : -ID [A] 100 VDS= -10V Pulsed Data Sheet 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 1.5 2.0 2.5 3.0 GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] Ta=25°C Pulsed 100 VGS= -10V Pulsed 100 VGS= -4.5V Pulsed 10 VGS= -4.0V VGS= -4.5V VGS= -10V 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 0.1 1 DRAIN-CURRENT : -ID [A] 10 1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(   ) 10 1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(    ) 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(I) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] REVERSE DRAIN CURRENT : -Is [A] VGS= -4.0V Pulsed 100 VDS= -10V Pulsed 100 VGS=0V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 1 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(  V) 10 0 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 10 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 1.2 www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/5 2010.01 - Rev.A SH8J66 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [mΩ] 45 40 35 30 25 20 15 10 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics 1 0.01 0.1 1 10 ID = -4.5A ID = -9.0A Ta=25°C Pulsed 10000 td(off) Switching Time : t [ns] 1000 tf Ta=25°C VDD = -15V VGS=-10V RG=10Ω Pulsed 10 GATE-SOURCE VOLTAGE : -VGS [V] Data Sheet 8 6 100 4 Ta=25°C VDD = -15V ID = -9.0A R G=10Ω Pulsed 0 10 20 30 40 50 60 70 10 tr td(on) 2 0 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 1000 Operation in this area is limited by RDS(on) (V GS=-10V) 1000 DRAIN CURRENT : -ID ( A) Ciss CAPACITANCE : C [pF] 100 PW =100us 10 PW = 10ms Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 1 PW =1ms 0.1 Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD 0.01 0.1 DC operation 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera NORMARIZED TRANSIENT THERMAL 10 RESISTANCE : r (t) 1 0.1 T a = 25°C Single Pulse : 1Unit 0.01 0.001 0.001 0.01 0.1 Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/5 2010.01 - Rev.A SH8J66 Measurement circuits Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Test Circuit Fig.1-2 Switching Time Waveforms VG VGS ID RL IG(Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Test Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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