SH8J66TB1

SH8J66 4V Drive Pch+Pch MOSFET SH8J66 Structure Silicon P-channel MOSFET Dimensions (Unit : mm) SOP8 Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Applications Switching Each lead has same dimensions Packaging specifications Package Type Inner circuit Taping (8) (7) (6) (5) TB Code Basic ordering unit (pieces) 2500 SH8J66 ∗2 ∗2 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed (1) Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 Total power dissipation Channel temperature Range of Storage temperature ∗1 ∗1 PD Tch Tstg ∗2 Limits −30 ±20 ±9 ±36 −1.6 −36 2.0 1.4 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 1/5 2010.01 - Rev.A SH8J66 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Gate-source leakage − IGSS Drain-source breakdown voltage V(BR) DSS −30 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ − RDS (on) resistance − Forward transfer admittance Yfs ∗ 11 Input capacitance Ciss − Coss Output capacitance − Reverse transfer capacitance − Crss td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − Fall time − tf ∗ Total gate charge − Qg ∗ − Gate-source charge Qgs ∗ − Qgd ∗ Gate-drain charge − − − − 13.5 17.5 19.0 − 3000 400 400 20 60 170 100 35 9 12 ±10 − −1 −2.5 18.5 23.6 24.7 − − − − − − − − − − − Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −9A, VGS= −10V ID= −4.5A, VGS= −4.5V ID= −4.5A, VGS= −4.0V VDS= −10V, ID= −9A VDS= −10V VGS=0V f=1MHz VDD −15V ID= −4.5A VGS= −10V RL=3.3Ω RG=10Ω VDD −15V ID= −9A VGS= −5V RL=1.7Ω / RG=10Ω ∗Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −9A, VGS=0V ∗ Pulsed www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 2/5 2010.01 - Rev.A SH8J66 Data Sheet Electrical characteristic curves DRAIN CURRENT : -ID [A] 14 12 10 8 VGS= -3.5V VGS= -3.0V 6 4 16 12 10 8 6 2 0 0 0.4 0.6 VGS= -2.5V 0.8 1.0 0 2 6 8 0.01 1.0 10 VGS= -4.0V VGS= -4.5V VGS= -10V 1 10 1 0.1 1 10 0.1 REVERSE DRAIN CURRENT : -Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 100 VDS= -10V Pulsed 10 1 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(  V) www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 10 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(    ) 100 1 1 DRAIN-CURRENT : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(   ) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(I) DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 3.0 VGS= -4.5V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C DRAIN-CURRENT : -ID [A] VGS= -4.0V Pulsed 2.5 100 VGS= -10V Pulsed 10 2.0 Fig.3 Typical Transfer Characteristics 1 1 1.5 GATE-SOURCE VOLTAGE : -VGS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) [mΩ] 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 4 100 Ta=25°C Pulsed 0.1 0.1 Fig.2 Typical output characteristics(   ) 100 10 Ta= 75°C Ta= 25°C Ta= - 25°C 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(  ) 100 Ta= 125°C VGS= -2.2V DRAIN-SOURCE VOLTAGE : -VDS[V] 0.1 10 4 2 0.2 VDS= -10V Pulsed VGS= -10V VGS= -4.0V VGS= -3.0V 14 VGS= -2.5V 0.0 100 Ta=25°C Pulsed 18 VGS= -10V VGS= -4.5V VGS= -4.0V 16 DRAIN CURRENT : -ID [A] 20 Ta=25°C Pulsed 18 DRAIN CURRENT : -ID [A] 20 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Forward Transfer Admittance vs. Drain Current 3/5 10 VGS=0V Pulsed 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE-DRAIN VOLTAGE : -VSD [V] 1.2 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 2010.01 - Rev.A SH8J66 Data Sheet td(off) Switching Time : t [ns] 40 35 ID = -9.0A 30 ID = -4.5A 25 10 10000 Ta=25°C Pulsed 45 tf 1000 Ta=25°C VDD = -15V VGS=-10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -VGS [V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [mΩ] 50 100 10 20 td(on) tr 15 1 10 0 5 10 6 4 Ta=25°C VDD = -15V ID = -9.0A R G=10Ω Pulsed 2 0 0.01 15 8 0.1 1 10 GATE-SOURCE VOLTAGE : -VGS[V] 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE : Qg [nC] DRAIN-CURRENT : -ID [A] Fig.11 Switching Characteristics Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Fig.12 Dynamic Input Characteristics 1000 Operation in this area is limited by RDS(on) (V GS=-10V) 1000 Crss Coss 100 100 DRAIN CURRENT : -ID (A) CAPACITANCE : C [pF] Ciss Ta=25°C f=1MHz VGS=0V PW =100us 10 PW = 10ms 1 PW =1ms 0.1 Ta = 25°C Single Pulse MOUNTED ON CERAMIC BOARD 10 0.01 0.1 1 10 0.01 0.1 100 1 DC operation 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.14 Maximum Safe Operating Aera 10 RESISTANCE : r (t) NORMARIZED TRANSIENT THERMAL Fig.13 Typical Capacitance vs. Drain-Source Voltage 1 0.1 T a = 25°C Single Pulse : 1Unit 0.01 Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 89.3 °C/W 0.001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 4/5 2010.01 - Rev.A SH8J66 Data Sheet Measurement circuits Pulse Width VGS ID VGS VDS 10% 50% 90% RL D.U.T. 50% 10% 10% RG VDD VDS 90% td(on) 90% td(off) tr ton tf toff Fig.1-2 Switching Time Waveforms Fig.1-1 Switching Time Test Circuit VG VGS ID VDS Qg RL VGS IG(Const.) D.U.T. Qgs RG Qgd VDD Charge Fig.2-2 Gate Charge Waveform Fig.2-1 Gate Charge Test Circuit www.rohm.com c 2010 ROHM Co., Ltd. All rights reserved. ○ 5/5 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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