SH8K14

Data Sheet 4V Drive Nch + Nch MOSFET SH8K14  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8K14 Package Code Basic ordering unit (pieces) Taping TB 2500 ○  Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 7.0 Unit V V A A A A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 28 1.6 28 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.03 - Rev.A SH8K14  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 4.5 - Typ. 20 25 28 390 150 70 7 30 30 8 5.8 1.5 2.3 Max. 10 1 2.5 28 35 39 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=7.0A, VGS=4.5V ID=7.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=7.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.3 RG=10 ID=7A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A SH8K14 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics(Ⅰ) 7 6 DRAIN CURRENT : ID[A] 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] VGS= 2.5V VGS= 10V VGS= 4.5V VGS= 4.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 7 6 DRAIN CURRENT : ID[A] 5 4 3 2 1 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V VGS= 2.8V VGS= 2.5V Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed 1 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] DRAIN CURRENT : ID[A] 100 10 VGS= 4.0V VGS= 4.5V VGS= 10V 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.03 - Rev.A SH8K14 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 100 VGS= 4.0V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VDS= 10V Pulsed Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 40 SOURCE CURRENT : Is [A] 50 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed ID= 3.5A ID= 7.0A 30 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 20 10 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 Ta=25°C VDD= 15V VGS=10V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] td(off) SWITCHING TIME : t [ns] tf 100 8 6 td(on) 10 4 Ta=25°C VDD= 15V ID= 7A Pulsed 0 1 2 3 4 5 6 7 8 9 10 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.03 - Rev.A SH8K14 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 1000 10000 DRAIN CURRENT : ID (A) 100 Operation in this area is limited by RDS(ON) (VGS=10V) CAPACITANCE : C [pF] Ciss 1000 10 PW =100us 1 PW =1ms PW = 10ms DC operation Crss 100 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 Coss 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 0.01 100 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.03 - Rev.A SH8K14  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.03 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A