SH8K15

Data Sheet 4V Drive Nch + Nch MOSFET SH8K15  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8K15 Package Code Basic ordering unit (pieces) Taping TB 2500 ○  Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 30 20 9.0 Unit V V A A A A (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP Is Isp PD Tch Tstg *1 36 1.6 36 *1 *2 2.0 W / TOTAL 1.4 W / ELEMENT 150 C 55 to 150 C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.05 - Rev.A SH8K15  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 5.0 - Typ. 15 18 20 630 230 110 10 33 42 10 8.5 2.3 4.0 Max. 10 1 2.5 21 25 28 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=9.0A, VGS=4.5V ID=9.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=9.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.3 RG=10 ID=9A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=9.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.05 - Rev.A SH8K15 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics ( Ⅰ) 9 VGS=3.0V 8 7 VGS=10.0V Drain Current : ID [A] 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 Ta=25°C Pulsed VGS=2.8V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 9 VGS=10.0V 8 7 Drain Current : ID [A] VGS=4.5V VGS=4.0V VGS=2.5V VGS=4.5V VGS=4.0V 6 VGS=3.0V 5 VGS=2.8V 4 3 2 1 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Ta=25°C Pulsed VGS=2.5V Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta=25°C Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Static Drain-Source On-State Resistance RDS(on) [mΩ] 100 VGS=4.0V VGS=4.5V VGS=10V 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 Drain Current : ID [A] 10 100 1 0.01 0.1 1 Drain Current : ID [A] 10 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.05 - Rev.A SH8K15 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Drain Currnt : ID [A] 100 VDS=10V pulsed Fig.8 Typical Transfer Characteristics 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Drain Current : ID [A] Gate-Source Voltage : VGS [V] Fig.9 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 50 Ta=25°C Pulsed 40 ID=4.5A ID=9.0A 30 10 Source Current : Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 20 0.1 10 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : VSD [V] 0 0 2 4 6 8 10 Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics 10000 VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed tf 10 Ta=25°C VDD=15V ID=9A Pulsed Fig.12 Dynamic Input Characteristics Switching Time : t [ns] 8 Gate-Source Voltage : VGS [V] 1000 6 100 td(off) 4 td(on) 10 tr 2 1 0.01 0.1 1 10 Drain Current : ID [A] 0 0 5 10 15 Total Gate Charge : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.05 - Rev.A SH8K15 　 Data Sheet FIg.13 Typical Capacitance vs. Drain-Source Voltage 10000 Ta=25°C f=1MHz VGS=0V 10 Capacitance : C [pF] 1000 Drain Current : ID [ A ] Ciss 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs Coss 1 PW = 1ms PW = 10ms 100 Crss 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC Operation 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 0.01 100 Drain-Source Voltage : VDS [ V ] FIg.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.05 - Rev.A SH8K15  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A