SH8K22

4V Drive Nch+Nch MOSFET SH8K22 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter, Inverter Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8K22 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) ∗1 ∗1 Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Chanel temperature Range of Storage temperature *1 PW  10ｓ、Duty cycle  1 *2 Mounted on a ceramic board Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP *1 IS ISP *1 PD Tch Tstg *2 Limits Unit 45 V ±20 V ±4.5 A ±18 A 1 A 18 A 2 W / TOTAL 1.4 W / ELEMENT o 150 C o -55 to +150 C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A SH8K22 Electrical characteristics (Ta=25C) Parameter Symbol Min. − 45 − 1.0 − − − 3.5 − − − − − − − − − − Typ. − − − − 33 41 46 − 550 140 70 12 18 42 12 6.8 2.0 2.9 Max. ±10 − 1 2.5 46 57 64 − − − − − − − − 9.6 − − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 45V, VGS=0V VDS= 10V, ID= 1mA ID= 4.5A, VGS= 10V ID= 4.5A, VGS= 4.5V ID= 4.5A, VGS= 4.0V VDS= 10V, ID= 4.5A VDS= 10V VGS=0V f=1MHz VDD 25V ID= 2.5A VGS= 10V RL= 10Ω RG=10Ω VDD 25V, VGS= 5V ID= 4.5A RL= 5.6Ω, RG= 10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage * pulsed Symbol VSD * Min. － Typ. － Max. 1.2 Unit V Condition IS=4.5A/VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.12 - Rev.A SH8K22 Electrical characteristic curves 10 VDS=10V pulsed Drain Currnt : ID [A] Data Sheet 1000 Ta=125 C o o o o 1000 75 C 25 C -25 C Static Drain-Source On-State Resistance　　RDS(on) [m] 1 Ta=125 C 　　　75 C 　　　25 C o o o o 100 Static Drain-Source On-State Resistance　　RDS(on) [m] VGS=10V pulsed VGS=4.5V pulsed 100 0.1 　　-25 C 10 10 Ta=125oC 75oC 25oC -25oC 0.01 1.0 1 1 Drain Current : ID [A] 1.5 2.0 2.5 3.0 3.5 0.01 0.1 1 10 0.01 0.1 1 10 Gate-Source Voltage : VGS [V] Drain Current : ID [A] Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current (1) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (2) 1000 Static Drain-Source On-State Resistance 　RDS(on) [m] 200 VGS=4V pulsed Static Drain-Source On-State Resistance　　RDS(on) [m ] Ta=25oC pulsed 10 VGS=0V pulsed 150 Source Current : Is [A] 100 1 Ta=125oC 75oC 25oC -25oC 100 10 Ta=125 C 75oC 25 C -25oC o o ID=4.5A 7 0.1 50 1 0.01 ID=2.25A 1 10 0 0 5 10 15 Gate-Source Voltage : VGS [V] 0.1 0.01 0 0.5 1 1.5 Source-Drain Voltage : VSD [V] Drain Current : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (3) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 10000 10 8 6 4 2 0 0.01 0.1 Drain Current : ID [A] Fig.6 Source-Current vs. Source-Drain Voltage 10000 Ta=25oC f=1MHz VGS=0V 1000 Ciss Switching Time : t [ns] 1000 Capacitance : C [pF] tf RG=10 Pulsed Gate-Source Voltage : VGS [V] Ta=25oC VDD=25V VGS=10V Ta=25oC VDD=25V ID=4.5A RG=10 Pulsed 100 Coss 100 td(off) td(on) 10 tr Crss 10 0.01 0.1 1 10 100 Drain-Source Voltage : VDS [V] 1 1 10 0 2 4 6 8 10 12 Total Gate Charge : Qg [nC] Fig.7 Typical capacitance vs. Source-Drain Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.12 - Rev.A SH8K22 Measurement circuits Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.10 Switching Time Test Circuit Fig.11 Switching Time Waveforms VG VGS ID RL IG (Const.) D.U.T. RG VDD VDS Qg VGS Qgs Qgd Charge Fig.12 Gate Charge Test Circuit Fig.13 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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