SH8K32

4V Drive Nch+Nch MOSFET SH8K32 Structure Silicon N-channel MOSFET Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8). Application Switching Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8K32 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 60 ±20 ±4.5 ±18 1.0 18 2.0 150 −55 to +150 Unit V V A A A A W/TOTAL °C °C ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Total power dissipation Channel temperature Range of storage temperature ∗1 Pw 10μs, Duty cycle 1% ∗2 Mounted on a ceramic board. www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/4 2009.12 - Rev.A SH8K32 Electrical characteristics (Ta=25C) Parameter Symbol Min. − 60 − 1.0 − − − 4.0 − − − − − − − − − − Typ. − − − − 46 52 55 − 500 120 55 12 18 40 13 7.0 1.6 2.5 Max. ±10 − 1 2.5 65 73 77 − − − − − − − − 10 − − Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet RDS (on)∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Unit μA V μA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID= 1mA, VGS=0V VDS= 60V, VGS=0V VDS= 10V, ID= 1mA ID= 4.5A, VGS= 10V ID= 4.5A, VGS= 4.5V ID= 4.5A, VGS= 4.0V VDS= 10V, ID= 4.5A VDS= 10V VGS=0V f=1MHz VDD 30V ID= 2.3A VGS= 10V RL= 13Ω RG=10Ω VDD 30V, VGS= 5V ID= 4.5A RL= 6.7Ω, RG= 10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=4.5A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/4 2009.12 - Rev.A SH8K32 Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C Data Sheet 10 Ta=25°C Pulsed VGS=4.0V VGS=4.5V VGS=10V STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 1000 1000 VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C DRAIN CURRENT : ID (A) 1 0.1 0.01 0.001 100 100 0.0001 0.00001 0.5 1.0 1.5 2.0 2.5 3.0 10 0.01 0.1 1 10 10 0.01 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current(Ι) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 SOURCE CURRENT : IS (A) 1 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=0V Pulsed 100 100 0.1 10 0.01 0.1 1 10 10 0.01 0.1 1 10 0.01 0 0.5 1.0 1.5 DRAIN DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(ΙΙΙ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(IV) Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 300 ID=4.5A 200 ID=2.25A 1000 tf td (off) GATE-SOURCE VOLTAGE : VGS (V) 10 Ta=25°C Pulsed 10000 SWITCHING TIME : t (ns) Ta=25°C VDD=30V VGS=10V RG=10Ω Pulsed 10 Ta=25°C 9 VDD=30V ID=4.5A 8 RG=10Ω 7 Pulsed 6 5 4 3 2 1 0 0 2 4 6 8 10 12 100 100 10 td (on) tr 0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/4 2009.12 - Rev.A SH8K32 Data Sheet 10000 Ta=25°C f=1MHz VGS=0V CAPACITANCE : C (pF) 1000 Ciss 100 Coss Crss 10 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Typical Capacitance vs. Drain-Source Voltage Measurement circuits Pulse Width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% RG VDD td(on) ton 90% tr td(off) toff 90% tr Fig.1-1 Switching Time Test Circuit Fig.1-2 Switching Time Waveforms VG VGS ID RL IG (Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Test Circuit Fig.2-2 Gate Charge Waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/4 2009.12 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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