SH8M12

Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type SH8M12 Package Code Basic ordering unit (pieces) Taping TB 2500  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS ID IDP *1 Is Isp *1 PD Tch Tstg *2 Limits Tr1 : N-ch Tr2 : P-ch 30 20 5 20 1.6 20 30 20 4.5 18 1.6 18 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed 2.0 1.4 150 55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A SH8M12  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) RDS (on)* l Yfs l * Ciss Coss Crss td(on) * tr tf * * td(off) * Qg * Qgs * Qgd * Min. 30 1.0 2.5 - Typ. 30 40 45 250 90 45 6 27 26 5 4.0 1.2 1.2 Max. 10 1 2.5 42 56 63 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=5A, VGS=4.5V ID=5A, VGS=4V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=5A VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6 RG=10 ID=5A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A SH8M12  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 30 1.0 3.5 - Typ. 40 55 60 800 120 110 7 15 70 50 8.0 2.5 3.0 Max. 10 1 2.5 56 77 84 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=4.5A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=2.5A, VGS=4.5V ID=2.5A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=4.5A VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6 RG=10 ID=4.5A, VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.05 - Rev.A SH8M12 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics(Ⅰ) 5 Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 5 4 DRAIN CURRENT : ID[A] DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V 4 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 2.8V VGS= 2.5V 3 VGS= 2.5V 3 2 2 Ta=25°C Pulsed 1 VGS= 2.0V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 1 VGS= 2.0V 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= 10V Pulsed DRAIN CURRENT : ID[A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed 0.1 100 . VGS= 4.0V VGS= 4.5V VGS= 10V 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.1 1 DRAIN-CURRENT : ID[A] 10 10 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.05 - Rev.A SH8M12 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 10 VDS= 10V Pulsed Data Sheet 1000 VGS= 4.0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS=0V Pulsed SOURCE CURRENT : Is [A] 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed 80 ID= 5.0A 60 ID= 2.5A 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 40 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 5 GATE-SOURCE VOLTAGE : VGS[V] 10 Fig.11 Switching Characteristics 1000 td(off) tf SWITCHING TIME : t [ns] 100 GATE-SOURCE VOLTAGE : VGS [V] Ta=25°C VDD=15V VGS=10V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics 8 6 td(on) 10 tr 4 2 Ta=25°C VDD= 15V ID= 5.0A Pulsed 0 2 4 6 8 10 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.05 - Rev.A SH8M12 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 1000 Ciss Operation in this area is limited by RDS(ON) (VGS=10V) DRAIN CURRENT : ID (A) 10 PW =100us CAPACITANCE : C [pF] 100 Crss 1 PW =1ms PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 Coss DC operation 0.01 10 100 100 DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 1 100 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.05 - Rev.A SH8M12 〈Tr.2(Pch)〉 4.5 4 3.5 DRAIN CURRENT : -ID[A] 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 10 VDS= -10V Pulsed DRAIN CURRENT : -ID[A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VGS= -10V 　 Data Sheet Fig.1 Typical Output Characteristics(Ⅰ) 4.5 4 DRAIN CURRENT : -ID[A] VGS= -3.0V 3.5 3 2.5 2 1.5 1 0.5 0 0 Fig.2 Typical Output Characteristics(Ⅱ) VGS= -3.0V VGS= -2.8V VGS= -4.5V VGS= -4.0V VGS= -2.8V Ta=25°C Pulsed VGS= -10V VGS= -4.5V VGS= -4.0V VGS= -2.5V Ta=25°C Pulsed 2 4 6 8 10 VGS= -2.5V DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= -4.0V VGS= -4.5V VGS= -10V 0.1 100 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 10 100 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.05 - Rev.A SH8M12 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= -4.0V Pulsed VDS= -10V Pulsed Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 ID= -2.5A 80 ID= -4.5A 60 Ta=25°C Pulsed 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 40 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 0 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Switching Characteristics 10000 td(off) SWITCHING TIME : t [ns] 1000 tf Ta=25°C VDD= -15V VGS= -10V RG=10W 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 8 6 100 4 td(on) 10 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] 0 0 2 4 6 8 10 Ta=25°C VDD= -15V ID= -4.5A Pulsed 12 14 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.05 - Rev.A SH8M12 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 10000 Ta=25°C f=1MHz VGS=0V DRAIN CURRENT : -ID (A) Ciss CAPACITANCE : C [pF] 1000 Operation in this area is limited by RDS(ON) (VGS=-10V) 10 PW =100us 1 PW =1ms 100 Crss Coss PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC operation 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] 0.01 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 0.001 0.0001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.05 - Rev.A SH8M12  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.3-1 Switching Time Measurement Circuit Fig.3-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A