SH8M13

Data Sheet 4V Drive Nch + Pch MOSFET SH8M13  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M13 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch 30 ±20 6.0 24 1.6 24 2.0 1.4 150 55 to 150 30 ±20 7.0 28 1.6 28 Unit V V A A A A W / TOTAL W / ELEMENT C C (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP *1 Is Isp PD *1 *2 Tch Tstg www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A SH8M13  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 2.5 - Typ. 22 30 35 350 160 65 8 16 30 7 5.0 1.4 1.9 Max. ±10 1 2.5 31 42 49 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=6.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m  ID=6.0A, VGS=4.5V ID=6.0A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=6.0A VDS=10V VGS=0V f=1MHz ID=3.0A, VDD 15V VGS=10V RL=5 RG=10 ID=6.0A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=6.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A SH8M13  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on)* tr * td(off)* tf * Qg * Qgs * Qgd * Min. 30 1.0 6.0 - Typ. 21.5 29.0 31.0 1200 170 170 12 40 80 65 18 3.5 6.5 Max. ±10 1 2.5 29.0 39.0 40.8 - Unit A V A V Conditions VGS=±20V, VDS=0V ID=1mA, V GS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7.0A, VGS=10V Drain-source breakdown voltage V (BR)DSS m  ID=3.5A, VGS=4.5V ID=3.5A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=7.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.29 RG=10 ID=7.0A VDD 15V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=7.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.05 - Rev.A SH8M13 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 6 Ta=25°C Pulsed VGS= 10V VGS= 4.5V VGS= 4.0V Fig.1 Typical Output Characteristics(Ⅰ) 　 Data Sheet Fig.2 Typical Output Characteristics(Ⅱ) 6 Ta=25°C Pulsed 5 DRAIN CURRENT : ID[A] 5 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V 4 4 3 VGS= 3.0V 2 3 VGS= 2.5V 2 1 VGS= 2.5V 1 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) 1000 VDS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed VGS= 4.0V VGS= 4.5V VGS= 10V Fig.3 Typical Transfer Characteristics 10 DRAIN CURRENT : ID[A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 0.1 . 10 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : VGS[V] 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) VGS= 4.5V Pulsed 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 1 0.1 1 DRAIN-CURRENT : ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.05 - Rev.A SH8M13 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C VDS= 10V Pulsed Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 1 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 1 DRAIN-CURRENT : ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 10 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : Is [A] 75 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed ID= 3.0A ID= 6.0A 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 50 25 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] 0 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Switching Characteristics 1000 tf SWITCHING TIME : t [ns] td(off) 100 Ta=25°C VDD=15V VGS=10V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS [V] 8 6 td(on) 10 4 Ta=25°C VDD= 15V ID= 6.0A RG=10W Pulsed 2 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : ID[A] 0 0 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.05 - Rev.A SH8M13 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 100 Operation in this area is limited by RDS(ON) (VGS=10V) 10000 Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 10 PW =100us 1000 1 PW =1ms PW = 10ms Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 DC operation 0.01 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25°C Single Pulse : 1Unit NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.05 - Rev.A SH8M13 〈Tr.2(Pch)〉 7 VGS=-3.0V 6 5 DRAIN CURRENT : -ID[A] 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS=-2.5V 　 Data Sheet Fig.1 Typical Output Characteristics(Ⅰ) Ta=25°C Pulsed 7 6 5 4 3 2 1 0 0 Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Pulsed VGS=-10V VGS=-4.5V VGS=-4.0V VGS=-3.0V VGS=-2.5V DRAIN CURRENT : -ID[A] VGS=-10V VGS=-4.5V VGS=-4.0V 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.3 Typical Transfer Characteristics 100 VDS=-10V Pulsed 10 DRAIN CURRENT : -ID[A] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS=-4.0V VGS=-4.5V VGS=-10V 100 1 0.1 10 0.01 0.001 0 1 2 3 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 1000 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 10 1 0.1 1 DRAIN-CURRENT : -ID[A] 10 1 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.05 - Rev.A SH8M13 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Forward Transfer Admittance vs. Drain Current 100 VGS= -4.0V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS=-10V Pulsed Data Sheet 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 100 10 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 1 DRAIN-CURRENT : -ID[A] 10 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SOURCE CURRENT : -Is [A] 80 10 100 Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25°C Pulsed ID= -3.5A 60 ID= -7.0A 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 40 0.1 20 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] 0 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.11 Switching Characteristics 10000 tf 1000 td(off) Ta=25°C VDD=-15V VGS=-10V RG=10W Pulsed 10 Fig.12 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : -VGS [V] 8 SWITCHING TIME : t [ns] 6 100 td(on) 4 Ta=25°C VDD= -15V ID= -7.0A RG=10W Pulsed 0 10 20 30 10 tr 1 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] 2 0 TOTAL GATE CHARGE : Qg [nC] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.05 - Rev.A SH8M13 　 Fig.13 Typical Capacitance vs. Drain-Source Voltage Data Sheet Fig.14 Maximum Safe Operating Aera 1000 Operation in this area is limited by RDS(ON) (VGS=-10V) 10000 Ciss 100 CAPACITANCE : C [pF] 1000 Coss Crss 100 DRAIN CURRENT : -ID (A) PW =100us 10 PW =1ms 1 PW = 10ms 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 0.1 1 10 Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] DC operation 0.01 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 Ta=25°C Single Pulse : 1Unit NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=89.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.01 0.1 1 10 100 1000 0.001 0.001 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.05 - Rev.A SH8M13  Measurement circuits Pulse width Data Sheet VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS 90% td(on) ton tr td(off) toff tf Fig.3-1 Switching Time Measurement Circuit Fig.3-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.4-1 Gate Charge Measurement Circuit Fig.4-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.05 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. 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