SH8M4

4V Drive Nch+Pch MOSFET SH8M4 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M4 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. ∗1 ∗1 Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits Nchannel Pchannel 30 −30 ±20 ±20 ±9.0 ±7.0 ±36 ±28 1.6 −1.6 36 −28 2 150 −55 to +150 Unit V V A A A A W °C °C (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-a)∗ Limits 62.5 Unit °C / W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.12 - Rev.A SH8M4 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. − 30 − 1.0 − − − 7.0 − − − − − − − − − − Typ. − − − − 12 16 17 − 1190 340 190 10 15 55 22 15 3.0 6.1 Max. ±10 − 1 2.5 18 24 25 − − − − − − − − − − − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗Pulsed Data Sheet Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=9.0A, VGS=10V ID=9.0A, VGS=4.5V ID=9.0A, VGS=4V ID=9.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=4.5A, VDD 15V VGS=10V RL=3.33Ω RG=10Ω VDD 15V VGS=5V ID=9.0A RDS (on) ∗ Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.12 - Rev.A SH8M4 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −30 − Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state ∗ − RDS (on) resistance − Yfs ∗ 6.0 Forward transfer admittance − Ciss Input capacitance − Coss Output capacitance − Crss Reverse transfer capacitance − td (on) ∗ Turn-on delay time − tr ∗ Rise time − td (off) ∗ Turn-off delay time − tf ∗ Fall time − Qg ∗ Total gate charge − Qgs ∗ Gate-source charge − Qgd ∗ Gate-drain charge ∗Pulsed Data Sheet Typ. − − − − 20 25 30 − 2600 450 350 20 50 110 70 25 5.5 10 Max. ±10 − −1 −2.5 28 35 42 − − − − − − − − − − − Unit μA V μA V mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −30V, VGS=0V VDS= −10V, ID= −1mA ID= −7.0A, VGS= −10V ID= −3.5A, VGS= −4.5V ID= −3.5A, VGS= −4.0V ID= −3.5A, VDS= −10V VDS= −10V VGS=0V f=1MHz ID= −3.5A, VDD −15V VGS= −10V RL=4.29Ω RG=10Ω VDD −15V VGS= −5V ID= −7.0A Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage Symbol VSD Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.6A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.12 - Rev.A SH8M4 N-ch Electrical characteristic curves 10000 Data Sheet 1000 tf 1000 Ciss GATE-SOURCE VOLTAGE : VGS (V) 10 SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE : C (pF) Ta=25°C VDD=15V VGS=10V RG=10Ω Pulsed 10 Ta=25°C 9 VDD=15V ID=9A 8 RG=10Ω Pulsed 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 100 td (off) Coss 100 Crss 10 tr td (on) 10 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 VDS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 200 Ta=25°C Pulsed 10 VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 150 SOURCE CURRENT : Is (A) DRAIN CURRENT : ID (A) 0.1 100 ID=9A ID=4.5A 1 0.1 0.01 50 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) VGS=10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 1000 1000 1000 VGS=4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 100 100 10 10 10 1 0.1 1 10 1 0.1 1 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.12 - Rev.A SH8M4 P-ch Electrical characteristic curves 10000 Data Sheet GATE-SOURCE VOLTAGE : −VGS (V) SWITCHING TIME : t (ns) Ta=25°C f=1MHz VGS=0V 10000 CAPACITANCE : C (pF) 1000 Ciss 1000 tf td (off) Ta=25°C VDD= −15V VGS= −10V RG=10Ω Pulsed 8 7 6 5 4 3 2 1 0 0 5 10 15 20 Ta=25°C VDD= −15V ID= −7A RG=10Ω Pulsed 100 tr 10 Coss Crss 100 0.01 td (on) 0.1 1 10 100 1 0.01 0.1 1 10 25 30 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10 VDS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 200 1 150 SOURCE CURRENT : −IS (A) Ta=25°C Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C VGS=0V Pulsed DRAIN CURRENT : −ID (A) 1 0.1 100 0.01 50 ID=−7.0A ID=−3.5A 0.1 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : −VGS (V) GATE-SOURCE VOLTAGE : −VGS (V) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 100 VGS= −10V Pulsed 1000 VGS= −4.5V Pulsed 1000 VGS= −4V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1 0.1 1 10 10 0.1 1 10 10 0.1 1 10 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) www.rohm.com c ○ 2009 ROHM Co., Ltd. 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