SH8M41

4V Drive Nch + Pch MOSFET SH8M41  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (7) (6) (2) (3)  Application Switching  Packaging specifications Type SH8M41 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Is Isp PD Tch Tstg *1 *2 *1 Limits Tr1 : N-ch Tr2 : P-ch 80 20 3.4 13.6 1.6 13.6 80 20 2.6 10.4 1.6 10.4 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4) Unit V V A A A A W / TOTAL C C ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. 2 150 55 to +150  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 62.5 Unit C / W www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.07 - Rev.A SH8M41  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 80 1.0 3 - Typ. 90 110 120 600 100 40 12 15 40 12 6.6 1.8 2.2 Max. 10 1 2.5 130 150 160 9.2 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=80V, VGS=0V VDS=10V, ID=1mA ID=3.4A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=3.4A, VGS=4.5V ID=3.4A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=3.4A VDS=10V VGS=0V f=1MHz ID=1.7A, VDD 40V VGS=10V RL=24 RG=10 ID=3.4A VDD 40V VGS=5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=6.4A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.07 - Rev.A SH8M41  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Data Sheet Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 80 1.0 2 - Typ. 165 220 230 1000 90 40 14 12 60 20 8.2 2.5 2.5 Max. 10 1 2.5 240 300 310 11.5 - Unit A V A V Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=80V, VGS=0V VDS=10V, ID=1mA ID=2.6A, VGS=10V Drain-source breakdown voltage V (BR)DSS m ID=1.3A, VGS=4.5V ID=1.3A, VGS=4.0V S pF pF pF ns ns ns ns nC nC nC ID=2.6A, VDS=10V VDS=10V VGS=0V f=1MHz ID=1.3A, VDD 40V VGS=10V RL=31 RG=10 ID=2.6A VDD 40V VGS= 5V Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=1.6A, VGS=0V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.07 - Rev.A SH8M41  Electrical characteristic curves Data Sheet 4 DRAIN CURRENT : ID[A] VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V VGS= 2.6V 1 VGS= 2.4V 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) Ta=25°C Pulsed 4 VGS= 10V VGS= 4.5V VGS= 4.0V VGS= 3.0V Ta=25°C Pulsed DRAIN CURRENT : ID[A] 10 VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C DRAIN CURRENT : ID[A] 3 3 1 2 2 VGS= 2.6V 0.1 1 VGS= 2.4V 0.01 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) 0.001 0 1 2 3 4 GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 1000 VGS= 4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 VGS=10V VGS=4.5V VGS=4.0V 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 100 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= 4.0V Pulsed VDS= 10V Pulsed REVERSE DRAIN CURRENT : Is [A] 1000 10 10 VGS=0V Pulsed 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 0.01 DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 4/8 2010.07 - Rev.A SH8M41 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 400 300 200 100 0 0 5 10 ID= 1.7A SWITCHING TIME : t [ns] Ta=25°C Pulsed td(off) 1000 tf Ta=25°C VDD=40V VGS=10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] 500 10000 10 8 6 4 2 0 0 2 4 6 8 Ta=25°C VDD=40V ID= 3.4A RG=10Ω Pulsed 10 12 14 ID= 3.4A 100 10 td(on) 1 tr 0.1 1 10 15 0.01 GATE-SOURCE VOLTAGE : VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss 1000 100 Crss Coss 10 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/8 2010.07 - Rev.A SH8M41  Electrical characteristic curves 4 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed VGS= -10V VGS=- 4.5V VGS=- 4.0V 4 DRAIN CURRENT : -ID[A] Ta=25°C Pulsed DRAIN CURRENT : -ID[A] 10 Data Sheet VGS= -10V VGS= -4.5V VGS= -4.0V VDS= -10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 3 3 VGS= -2.6V 1 VGS= -3.0V VGS= -2.6V 2 2 0.1 1 VGS= -2.4V 1 VGS= -2.4V 0.01 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) 0.001 0 1 2 3 4 GATE-SOURCE VOLTAGE : -VGS[V] Fig.3 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] Ta= 25°C Pulsed VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] 1000 1000 1000 VGS= -4.5V Pulsed 100 VGS=-10V VGS= -4.5V VGS= -4.0V 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ⅰ) 10 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ⅱ) 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[mΩ] REVERSE DRAIN CURRENT : -Is [A] 1000 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VGS= -4.0V Pulsed 10 VDS= -10V Pulsed 10 VGS=0V Pulsed 1 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0 0.5 1 1.5 10 0.1 1 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current( Ⅲ) 10 0.01 0.01 0.1 1 10 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 6/8 2010.07 - Rev.A SH8M41 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] SWITCHING TIME : t [ns] Ta=25°C Pulsed ID= -2.6A 400 300 200 100 0 0 5 10 15 ID= -1.3A td(off) 1000 tf Ta=25°C VDD=-40V VGS=-10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : -VGS [V] 500 10000 10 8 6 4 2 0 0 2 4 6 8 10 Ta=25°C VDD=-40V ID= -2.6A RG=10Ω Pulsed 12 14 16 100 10 td(on) 1 0.01 0.1 1 10 tr GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss 1000 100 Coss 1 10 100 Crss 10 0.01 0.1 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 7/8 2010.07 - Rev.A SH8M41  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL VDS VGS Qgs Qg IG(Const.) D.U.T. VDD Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Fig. 3-1 Switching Time Measurement Circuit Fig.1-2 Fig. 3-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig. 4-1 Gate charge measurement circuit Fig.2-1 Fig.2-2 Gate Charge Waveform Fig. 4-2 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 8/8 2010.07 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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