SH8M70

10V Drive Nch+Pch MOSFET SH8M70 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M70 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD. Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Continuous Pulsed Continuous Pulsed Limits N-ch P-ch 250 −250 30 −20 ±3.0 ±2.5 ±12 ±10 1.0 −1.0 12 −10 2.0(TOTAL) 1.4(ELEMENT) 150 −55 to +150 Unit V V A A A A W °C °C www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/7 2010.06 - Rev.B SH8M70 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS 250 IDSS Zero gate voltage drain current − 2.0 Gate threshold voltage VGS (th) ∗ Static drain-source on-state − RDS (on) resistance ∗ Forward transfer admittance 0.75 Yfs Input capacitance − Ciss Output capacitance Coss − − Crss Reverse transfer capacitance td (on) ∗ − Turn-on delay time tr ∗ − Rise time td (off) ∗ − Turn-off delay time tf ∗ − Fall time − Qg ∗ Total gate charge Qgs ∗ − Gate-source charge − Qgd ∗ Gate-drain charge ∗Pulsed Data Sheet Typ. − − − − 1.25 − 180 70 20 10 20 20 25 5.2 2.1 1.2 Max. ±10 − 25 4.0 1.63 − − − − − − − − − − − Unit μA V μA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±25V, VDS=0V ID=1mA, VGS=0V VDS=250V, VGS=0V VDS=10V, ID=1mA ID=1.5A, VGS=10V ID=1.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=1.5A, VDD 125V VGS=10V RL=83Ω RG =10Ω VDD 125V VGS=10V ID=3A RL=42Ω RG =10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS=3A, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/7 2010.06 - Rev.B SH8M70 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −250 − Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) −2.0 Static drain-source on-state ∗ − RDS (on) resistance ∗ 1.0 Forward transfer admittance Yfs − Input capacitance Ciss Output capacitance − Coss Reverse transfer capacitance − Crss Turn-on delay time − td (on) ∗ Rise time − tr ∗ Turn-off delay time − td (off) ∗ Fall time − tf ∗ Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ ∗Pulsed Data Sheet Typ. − − − − 2.2 − 250 40 10 9 15 30 20 8 2.5 2.8 Max. ±10 − −25 −4.0 2.8 − − − − − − − − − − − Unit μA V μA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±15V, VDS=0V ID= −1mA, VGS=0V VDS= −250V, VGS=0V VDS= −10V, ID= −1mA ID= −1.25A, VGS= −10V ID= −1.25A, VDS= −10V VDS= −25V VGS=0V f=1MHz ID= −1.25A, VDD −125V VGS= −10V RL=100Ω RG =10Ω VDD −125V, ID= −2.5A VGS= −10V RL=50Ω, RG =10Ω Body diode characteristics (Source-Drain) (Ta=25C) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. − Typ. − Max. −1.5 Unit V Conditions IS=−2.5A, VGS=0V www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/7 2010.06 - Rev.B SH8M70 N-ch Electrical characteristic curves 1000 Data Sheet 10000 Typical Capacitance : C (pF) Switching Time : t(ns) 1000 Reverse Recovery Time : trr (ns) Ciss 100 tf td(off) 100 Ta=25°C VDD=125V VGS=10V RG=10Ω Pulsed 1000 100 Coss 10 f=1MHz VGS=0V Ta=25°C 1 Pulsed 0.01 0.1 td(on) 10 10 Ta=25°C di/dt=100A/μs VGS=0V Pulsed 10 tr Crss 1 10 100 1000 1 0.01 0.1 1 10 1 0.1 1 Drain-Source Voltage : VDS(V) Drain Current : ID(A) Reverse Drain Current : IDR(A) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Reverse Recovery Time vs. Reverse Drain Current Static Drain-Source On-State Resistance 15 10 Gate Source Voltage : VGS(V) VDS=10V Pulsed 10 9 8 7 6 5 4 3 2 1 0 0 5 10 15 1.5A ID=3A Ta=25°C Pulsed Drain Current : ID(A) 10 1 5 Ta=25°C VDD=125V ID=3A Pulsed 5 6 7 0.1 Ta=-25°C 25°C 75°C 125°C 0 0 1 2 3 4 0.01 0 2 4 6 8 20 Total Gate Charge : Qg(nC) Gate-Source Voltage : VGS (V) Gate-Source Voltage : VGS(V) Fig.4 Dynamic Input Characteristics Fig.5 Typical Transfer Characteristics Fig.6 Static Drain-Source On-State Resistance vs.Gate-Source Voltage Static Drain-Source On-State Resistance : VGS=0V Pulsed 10 Static Drain-Source On-State Resistance 10 3 2.5 VGS=10V Pulsed VGS=10V Pulsed ID=3.0A Source Current : IS(A) 2 1.5 1 0.5 0 -50 -25 1.5A 1 Ta=-25°C 25°C 75°C 125°C 1 Ta=125°C 75°C 25°C -25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.1 0.1 1 10 0 25 50 75 100 125 150 Source-Drain Voltage : VSD(V) Drain Current : ID(A) Temperature : Tch (°C) Fig.7 Source Current vs. Source-Drain Voltage Fig.8 Static Drain-Source On-State Resistance vs. Drain Current Fig.9 Static Drain-Source On-State Resistance vs. Channel Temperature www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/7 2010.06 - Rev.B SH8M70 Data Sheet 10 Gate Threshold Voltage : VGS(th)(V) VDS=10V Pulsed 5 VDS=10V ID=1mA Forward Transfer Admittance : |Yfs| (S) 4 Drain Current : ID (A) VGS=10V 9V 8V 1.6 7V 1.8 1.4 1.2 1 0.8 0.6 0.4 0.2 2 6V 1 3 5V 0.1 Ta=-25°C 25°C 75°C 75°C 2 1 4V 3V 0 2 4 6 8 10 0.01 0.01 0.1 1 10 0 -50 -25 0 25 50 75 100 125 150 0 Drain Current : ID(A) Fig.10 Forward Transfer Admittance vs. Drain Current Channel Temperature : Tch (°C) Drain-Sourse Voltage : VDS (V) Fig.11 Gate Threshold Voltage vs. Channel Temperature Fig.12 Typical Output Characteristics P-ch Electrical characteristic curves 1000 Ciss 10000 Typical Capacitance : C (pF) 1000 tf 100 td(off) td(on) 10 Gate Source Voltage : −VGS(V) Switching Time : t(ns) Ta=25°C VDD= −125V VGS= −10V RG=10Ω Pulsed 15 100 Coss 10 10 f=1MHz VGS=0V Ta=25°C Pulsed 1 0.01 0.1 Crss 5 Ta=25°C VDD=−125V ID=−2.5A Pulsed 0 1 2 3 4 5 6 7 8 9 10 tr 1 10 100 1000 1 0.01 0.1 1 10 0 Drain-Source Voltage : -VDS(V) Drain Current : -ID (A) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Total Gate Charge : Qg(nC) Fig.3 Dynamic Input Characteristics 10 Static Drain - Source On - State Resistance VDS=-10V Pulsed 10 9 10 Drain Current : -ID (A) 1 7 6 5 4 3 2 1 Ta=25°C Pulsed 0 0 5 ID=-2.5A -1.25A Source Current : -IS(A) 8 1 Ta=-25°C 25°C 75°C 125°C VGS=0V Pulsed 0 0.2 0.4 0.6 0.8 1 1.2 0.1 Ta=-25°C 25°C 75°C 125°C 0.01 0 2 4 6 8 0.1 10 15 20 Gate-Source Voltage : −VGS(V) Gate-Source Voltage : -VGS(V) Source-Drain Voltage : -VSD(V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/7 2010.06 - Rev.B SH8M70 Data Sheet Static Drain-Source On-State Resistance : Gate Threshold Voltage : -VGS(th)(V) 10 10 VDS=10V Pulsed 5 Forward Transfer Admittance : |Yfs| (S) 4 1 3 1 Ta=125°C 75°C 25°C -25°C 0.1 Ta=-25°C 25°C 75°C 125°C 2 1 VDS=10V ID=1mA 0 25 50 75 100 125 150 VGS=10V Pulsed 0.1 0.1 1 10 0.01 0.01 0.1 1 10 0 -50 -25 Drain Current : -ID(A) Drain Current : -ID(A) Channel Temperature : Tch: (°C) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Gate Threshold Voltage vs. Channel Temperature 1000 5 Reverse Recovery Time : trr (ns) VGS=10V Pulsed ID=2.5A (X-1) 2 1.8 1.6 VGS=-10V -9V -8V -7V Static Drain-Source On-State Resistance : RDS(on)(Ω) -6V 4 100 Drain Current : -ID(A) 3 1.25A 2 1.4 1.2 1 0.8 0.6 0.4 TC=25°C Single Pulsed -5V 10 1 1 0.1 1 10 0 -50 -25 0.2 0 25 50 75 100 125 150 -4V 0 2 4 6 8 10 Reverse Drain Current : -IDR (A) 0 Fig.10 Reverse Recovery Time vs. Reverse Drain Current Temperature : Tch (°C) Drain-Sourse Voltage : -VDS(V)(X-1) Fig.11 Static Drain-Source On-State Resistance vs.Channel Temperature Fig.12 Typical Output Characteristics www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 6/7 2010.06 - Rev.B SH8M70 N-ch Measurement circuit VGS ID RL VGS Data Sheet VDS 50% 10% Pulse Width 90% 50% 10% D.U.T. RG VDD VDS 10% 90% td(on) ton tr td(off) toff 90% tr Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VGS ID RL VDS VG Qg VGS IG (Const.) D.U.T. RG VDD Qgs Qgd Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveform P-ch  Measurement circuit VGS ID RL D.U.T. RG VDD VDS td(on) ton 10% 90% tr td(off) toff 10% 90% tr VDS VGS Pulse Width 10% 50% 50% 90% Fig.17 Switching Time Measurement Circuit Fig.18 Switching Waveforms VGS ID RL IG (Const.) D.U.T. RG VDD VDS VG Qg VGS Qgs Qgd Charge Fig.19 Gate Charge Measurement Circuit Fig.20 Gate Charge Waveform www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 7/7 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A