SIM-040ST

SIM-040ST Surface Mount High Output Infrared LEDs Absolute maximum ratings (Ta=25°C) Parameter Forward current Pulse forward current Reverse voltage Power dissipation Operating temperature Storage temperature *1 Pulse width 0.1msec,duty ratio1% *1 Symbol IF IFP VR PD Topr Tstg Limits 100 1 5 180 −25 to＋85 −40 to＋85 Unit mA A V mW °C °C Applications Light source for sensors (proximity sensors, signal transmission applications) Features 1) Higt compact, low-profile 2) Higt output, over a narrow angle 3) Exellent temperature property 4) Long life,high reliability 5) Original optical tecnology is ultra-high-output surface mount infrared LEDs. Electrical and optical characteristics (Ta=25°C) Parameter Symbol VF IR Min. Typ. Max. Unit Conditions IF=100mA VR=5V IF=100mA IF=100mA Forward voltage Reverse current Peak light emitting wavelength Spectral line half width View angle Radiant intensity − − − − − 20 1.7 − 870 35 2.5 15 − − − 100 V μA nm nm deg. λpeak Δλ θ1/2 IE ±20 − − mW/sr IF=100mA ∗ Non-coherent infrared light emiting diode used. ∗ This product is not designed to be protected against electromagnetic wave. Electrical and optical characteristics curves 120 100 80 1000 RADIANT INTENSITY : IE (mW / sr) FORWARD CURRENT : IF (mA) 120 100 80 60 40 20 0 FORWARD CURRENT : IF (mA) 100 −25°C 0°C 25°C 60°C 85°C 60 40 20 0 -25 10 1 0 25 50 75 100 0 0.5 1 1.5 2 2.5 3 AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) 0 50 100 150 200 FORWARD CURRENT : IF (mA) Fig.1 Forward current fall off 1.4 RELATIVE RADIANT INTENSITY 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -25 0.0 700 RERATIVE SENSITIVITY 0.8 1.0 Fig.2 Forward current vs. Forward voltage 1 RERATIVE RADIANT INTENSITY 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 −90 Fig.3 Radiant intensity vs. Forward current IF=100mA IF=100mA 0.6 0.4 0.2 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) 750 800 850 900 950 1000 1050 OPTICAL WAVELENGTH : λp (nm) −60 −30 0 30 60 90 ANGLE : deg Fig.4 Relative radiant vs. Ambient temperature Fig.5 Spectrum date Fig.6 Radiant intensity Dimensions (Unit : mm) 3.1 (1.2) 0.65 1.8 0.65 Internal connection diagram 1.95 1.6 2.25 Cathode Anode (0.15) Cathode (0.15) Anode Backside Matellisation Notes: 1. Unspecified tolerance shall be ± 0.15 . 2. Dimension in parenthesis are show for reference. 880 875 WAVELENGTH : ƒλp (nm) 870 865 860 855 850 −25 IF=100mA 0 25 50 75 100 AMBIENT TEMPERATURE : Ta (°C) Fig.7 Wavelength vs. Ambient temperature 2010.11 Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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