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SIR-320ST3FF

SIR-320ST3FF

  • 厂商:

    ROHM(罗姆)

  • 封装:

    T-1

  • 描述:

    EMITTER IR 940NM 75MA T-1

  • 数据手册
  • 价格&库存
SIR-320ST3FF 数据手册
SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. !External dimensions (Units : mm) !Applications Optical control equipment Light source for remote control devices φ3.8±0.3 1.1 !Features 1) Compact (φ3.1mm). 2) High efficiency, high output PO=9.0mW (IF=50mA). 3) Wide radiation angle θ=±18deg. 4) Emission spectrum well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 2− 0.5 2 2.5±1 Min.24 Max.1 4−0.6 5.2±0.3 φ3.1±0.2 1 2±0.2 (2.5) 1 Anode 2 Cathode !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Forward current Parameter IF 75 mA Reverse voltage VR 5 V Power dissipation PD 100 mW Pulse forward current IFP∗ 1.0 A Operating temperature Topr −25~+85 °C Storage temperature Tstg −40~+85 °C ∗ Pulse width=0.1msec, duty ratio 1% 1/3 SIR-320ST3F Sensors !Electrical and optical characteristics (Ta = 25°C) Symbol Parameter Min. Typ. Max. Unit Conditions Optical output PO − 9 − mW IF=5mA Emitting strength IE 5.6 − − mW/sr IF=5mA Forward voltage VF − 1.2 1.5 V IF=5mA Reverse current IR − − 10 µA VR=3V Peak light emitting wavelength λP − 940 − nm IF=5mA ∆λ − 40 − nm IF=5mA Half-viewing angle θ1 / 2 − ±18 − deg IF=5mA Pesponse time tr·tf − 1.0 − µs IF=5mA fC − 1.0 − MHz IF=5mA Spectral line half width Cut-off frequency FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) 100 80 60 40 20 0 −20 0 20 40 60 80 −25°C 100 0°C 25°C 80 50°C 75°C 60 40 20 00 100 RELATIVE OPTICAL OUTPUT : PO (%) !Electrical and optical characteristic curves 1 FORWARD VOLTAGE : VF (V) RELATIVE EMITTING STRENGTH : IE (%) EMITTING STRENGTH : IE (mW/sr) 40 30 20 10 0 0 20 40 60 80 FORWARD CURRENT : IF (mA) Fig.4 Emitting strength vs. forward current 100 60 40 20 900 950 1000 1050 OPTICAL WAVELENGTH : λ (nm) Fig.3 Wavelength Fig.2 Forward current vs. forward voltage 50 80 0 850 2 AMBIENT TEMPERATURE : Ta (°C) FIg.1 Forward current falloff 100 200 100 50 20 10 −20 0 20 40 60 80 100 AMBIENT TEMPERATURE : Ta (°C) Fig.5 Radiant intensity vs. ambient temperature 2/3 SIR-320ST3F Sensors 10° 0° 100 30° 80 40° 50° 60 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE EMITTING STRENGTH (%) 20° 0 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ(deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern 10° 0° 100 30° 80 40° 50° no masking 60 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE EMITTING STRENGTH (%) RELATIVE EMITTING STRENGTH (%) 20° 0 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ(deg) Fig.7 Directional pattern 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0
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