SIR-341ST3F_10

Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. Applications Optical control equipment Light source for remote control devices Dimensions (Unit : mm) φ3.8±0.3 φ3.5 φ3.1±0.2 5.2±0.3 Features 1) Compact (3.1mm). 2) High efficiency, high output PO8.4mW (IF50mA). 3) Wide radiation angle  1/216deg. 4) Peak wavelength well suited to silicon detectors (P940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 2− 0.5 Min.24 1 (2.5) 2.5±1 2 Max.1 4−0.6 1.1 Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. 1 Anode 2 Cathode Absolute maximum ratings (Ta = 25C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature ∗ Pulse width=0.1msec, duty ratio 1% Symbol IF VR PD IFP∗ Topr Tstg Limits 75 5 100 500 −25 to +85 −40 to +85 Unit mA V mW mA °C °C Electrical and optical characteristics (Ta = 25C) Parameter Optical output Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Response time Cut-off frequency Symbol PO IE VF IR Min. − 5.6 − − − − − − − Typ. 8.4 18.1 1.3 − 940 40 ±16 1.0 1.0 Max. − − 1.5 10 − − − − − Unit mW mW/sr V μA nm nm deg μs MHz IF=50mA IF=50mA IF=50mA VR=3V IF=50mA IF=50mA IF=50mA IF=50mA IF=50mA Conditions λP Δλ θ1 / 2 tr·tf fC www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/2 2010.06 - Rev.B SIR-341ST3F Electrical and optical characteristic curves 100 FORWARD CURRENT : IF (mA) 50 Data Sheet 100 FORWARD CURRENT : IF (mA) −25°C 0°C 25°C 50°C 75°C 80 RELATIVE OPTICAL OUTPUT : PO (%) 80 40 60 60 30 40 20 40 20 10 0 0 20 0 0 20 40 60 80 100 0 1 FORWARD VOLTAGE : VF (V) 2 900 920 940 960 980 AMBIENT TEMPERATURE : Ta (°C) OPTICAL WAVELENGTH : λ (nm) Fig.1 Forward current falloff Fig.2 Forward current vs. forward voltage Fig.3 Wavelength RELATIVE EMITTING STRENGTH : IE (%) 50 EMITTING STRENGTH : IE (mW/sr) 200 40 100 30 50 20 10 20 0 0 20 40 60 80 100 10 −20 0 20 40 60 80 FORWARD CURRENT : IF (mA) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Emitting strength vs. forward current Fig.5 Relative emitting strength vs.ambient temperature 30° 40° 50° 60 60° 70° 80° 90° 100 40 80 20 80 60 40 20 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT : θ (deg) RELATIVE EMITTING STRENGTH (%) Fig.6 Directional pattern www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. RELATIVE EMITTING STRENGTH (%) 20° 10° 0° 100 2/2 2010.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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